Search results

This paper aims to demonstrate low-temperature bonding for piezoelectric materials at temperatures well below the relevant Curie temperatures so as to avoid depolarization of the piezoelectric material during bonding.

Au-coated test samples of lead zirconate titanate (PZT) are bonded to a WC-based resonant backing layer with In–Bi eutectic material in which the In–Bi metal system is a preform or thin, evaporated layers. The bonded samples are characterized using electrical impedance spectroscopy and cross-section microscopy. The first technique verifies the integrity of polarization and reveals the quality of the bondline in a non-destructive manner, particularly looking for voids and delaminations. The latter technique is destructive but gives more precise information and an overview of the structure.

Successful low-temperature (115°C) bonding with intact PZT polarization was demonstrated. The bondlines show a layered structure of Au/Au–In intermetallic compounds (with Bi inclusions)/Au, capable of withstanding temperatures as high as 271°C before remelting occurs. For bonded samples using In–Bi preform, repeatable bonds of high quality (very little voiding) were obtained, but the bonding time is long (1 h or more). For bonded samples using evaporated thin films of In–Bi, bonding can be performed in 30 min, but the process needs further optimization to be repeatable.

Low-temperature solid-liquid interdiffusion (SLID) bonding is a novel technique, merging the fields of low-temperature solder bonding with the SLID/transient liquid phase (TLP) approach, which is normally used for much higher temperatures.

This paper aims to investigate the sintering and solid liquid interdiffusion bonding (SLID) techniques to attach AlGaN/GaN-on-Si chips to direct bond copper (DBC) substrate. The influence of metal layers deposited on the backside of AlGaN/GaN-on-Si dies on the assembly process is also investigated.

The authors assumed the value of the shear strength to be a basic parameter for evaluation of mechanical properties. Additionally, the surface condition after shearing was assessed by SEM photographs and the shear surface was studied by X-ray diffraction method. The SLID requires Sn-plated DBC substrate and can be carried out at temperature slightly higher than 250°C and pressure reduced to 4 MPa, while the sintering requires process temperature of 350°C and the pressure at least 7.5 MPa.

Ag-, Au-backside covered high electron mobility transistor (HEMT) chips can be assembled on Sn-plated DBC substrates by SLID technology. In case of sintering technology, Cu- or Ag-backside covered HEMT chips can be assembled on Ag- or Ni/Au-plated DBC substrates. The SLID process can be realized at lower temperature and decreased pressure than sintering process.

For SLID technology, the adhesion between Cu-backside covered HEMT die and DBC with Sn layer loses its operational properties after short-term ageing in air at temperature of 300°C.

In the SLID process, Sn-Cu and Sn-Ag intermetallic compounds and alloys are responsible for creation of the joint between Sn-plated DBC and micropowder Ag layer, while the sintered joint between the chip and Ag-based micropowder is formed in diffusion process.

This paper used a novel technique, which is thermo-compression bonding, and Sn-1.0Ag-0.5Cu solder to form a full intermetallic compound (IMC) Cu₃Sn joints (Cu/Cu₃Sn/Cu joints). The purpose of the study is to form high-melting-point IMC joints for high-temperature power electronics applications. The study also investigated the effect of temperature gradient on the microstructure evolution and the growth behavior of IMCs.

In this paper, the thermo-compression bonding technique was used to form full Cu₃Sn joints.

Experimental results indicated that full Cu/Cu3Sn/Cu solder joints with the thickness of about 5-6 µm are formed in a short time of 9.9 s and under a low pressure of 0.016 MPa at 450°C by thermo-compression bonding technique. During the bonding process, Cu₆Sn₅ grew with common scallop-like shape at Cu/SAC105 interfaces, which was followed by the growth of Cu₃Sn with planar-like shape between Cu/Cu6Sn5 interfaces. Meanwhile, the morphology of Cu₃Sn transformed from a planar-like shape to wave-like shape until full IMCs solder joints were eventually formed during thermo-compression bonding process. Asymmetrical growth behavior of the interfacial IMCs was also clearly observed at both ends of the Cu/SAC105 (Sn-1.0Ag-0.5Cu)/Cu solder joints. Detailed reasons for the asymmetrical growth behavior of the interfacial IMCs during thermo-compression bonding process are given. The compound of Ag element causes a reduction in Cu dissolution rate from the IMC into the solder solution at the hot end, inhibiting the growth of IMCs at the cold end.

This study used the thermo-compression bonding technique and Sn-1.0Ag-0.5Cu to form full Cu₃Sn joints.

Bumpless Cu/SiO₂ hybrid bonding, which this paper aims to, is a key technology of three-dimensional (3D) high-density integration to promote the integrated circuits industry’s continuous development, which achieves the stacks of chips vertically connected via through-silicon via. Surface-activated bonding (SAB) and thermal-compression bonding (TCB) are used, but both have some shortcomings. The SAB method is overdemanding in the bonding environment, and the TCB method requires a high temperature to remove copper oxide from surfaces, which increases the thermal budget and grossly damages the fine-pitch device.

In this review, methods to prevent and remove copper oxidation in the whole bonding process for a lower bonding temperature, such as wet treatment, plasma surface activation, nanotwinned copper and the metal passivation layer, are investigated.

The cooperative bonding method combining wet treatment and plasma activation shows outstanding technological superiority without the high cost and additional necessity of copper passivation in manufacture. Cu/SiO₂ hybrid bonding has great potential to effectively enhance the integration density in future 3D packaging for artificial intelligence, the internet of things and other high-density chips.

To achieve heterogeneous bonding at a lower temperature, the SAB method, chemical treatment and the plasma-assisted bonding method (based on TCB) are used, and surface-enhanced measurements such as nanotwinned copper and the metal passivation layer are also applied to prevent surface copper oxide.

The purpose of this work is to explore the forms of intermetallic phase compounds (IMPCs) in Pt/In/Au and Pt/In/Ag joints by using isothermal solidification. This lead-free technique leads to formation of IMPCs having high-temperature stable joints for platinum-based micro-heater gas sensor fabricated on low temperature co-fired ceramic (LTCC) substrate.

Proposed task is to make an interconnection for Pt micro-heater electrode pad to the silver and gold thick-films printed on LTCC substrate. Both Pt/In/Au and Pt/In/Ag configured joints with different interactive areas prepared at 190 and 220°C to study temperature and contact surface area effects on ultimate tensile strength of the joints, for a 20 s reaction time, at 0.2 MPa applied pressure. Those delaminated joint interfaces studied under SEM, EDAX and XRD.

IMPCs identified through material analysis using diffraction analysis of XRD data are InPt3, AgIn2, AgPt, AgPt3, Au9In4 and other stoichiometric compounds. The interactive surface area between thick-films and temperature increment shows improvement in the formations of IMPCs and mechanical stability of joints. These IMPCs-based joints have improved the mechanical stability to the joints to sustain even at high operating temperatures. Elemental mapping of the weak joint contact interface shows unwanted oxide formations also reported. Physical inter-locking followed by the diffusion phenomenon on the silver substrate strengthen the interconnection has been noticed.

Inert gas environment creation inside the chamber to isolate the lead-free joint placed between heating stamp pads to avoid oxide formations at the interface while cooling which adds up to the cost of manufacturing. Most of the oxides at a joint-interface increase minute to moderate resistance with respect to the level of oxides took place. These oxides contributed heat certainly damage the micro-heater based gas sensors while functioning.

These isothermal solidification-based lead-free solder joints formation replace the existing lead-based packaging techniques. These lead-free interconnections on ceramic or LTCC substrate are reliable and durable, especially those designed to work for heavy-duty engines, even at severe environment conditions.

Platinum micro-heater-based gas sensors handles over a wide-range of temperatures about 300 to 500°C. The specific temperature level of different oxide films (SnO2) on the micro-heater is capable of detecting various specific gases. This feature of platinum based gas sensor demands durable and mechanically stable joints for continuous monitoring.

This paper aims to study the features of microstructures and mechanical properties of the joints which were produced by transient liquid phase method. The difference between phases in bonding region identified through metallography pictures and applying hardness and shear strength tests.

The bonding process was carried out at a temperature of 300°C for time durations ranging from 15 to 120 min. The scanning electron microscopy equipped with energy dispersive spectroscopy system and optical microscopy were used to examine microstructural characteristics, and mechanical properties of the joints were studied by applying microhardness and shear tests. The shear tests were conducted by a shear fixture which was mounted on the tensile machine.

The intermetallic compounds of the Cu₆Sn₅ −η and the Cu₃Sn-ε were formed simultaneously in the bonding interface. Although the η-phase, which exhibits scallop-shaped morphology, grows very quickly, upon completion of the isothermal solidification stage, it turns into the ε-phase. The hardness of the bonding interface is significantly higher than that of the substrate. The shear results show that once the bonding process is complete, brittle fracture occurs. Moreover, a greater decrease in strength was observed when the ε-phase is the only phase in the bonding region.

The hardness number of the η-phase is higher than that of the ε-phase. The hardness numbers of the η-phase and the ε-phase are 894 and 689 HV, respectively. The mean shear strength values of the samples that were bonded at 300 °C for 15, 60 and 120 min were 11.7, 9.5 and 5.4 MPa, respectively.

The aim of the paper is to study the feasibility of direct ultrasonic bonding between contact pad arrays on flexible printed circuit boards (FPCB) and rigid printed circuit boards (RPCB) at ambient temperature.

Metallization layers on the RPCB comprised Sn on Cu while the pads on the FPCB consisted of Au/Ni/Cu. Prepared RPCB and FPCB were bonded by ultrasound at ambient temperature using an ultrasonic frequency of 20 kHz, a power of 1,400 W, and 0.62 MPa of bonding pressure. The bonded samples were cross‐sectioned and the joints and microstructures were observed by Field Emission Scanning Electron Microscopy (FE‐SEM) and Energy Dispersive Spectroscopy (EDS). The soundness of the joints was evaluated by pull testing.

Robust bonding between FPCB and RPCB was obtained by bonding for 1.0 and 1.5 s. This result has confirmed that direct room temperature ultrasonic bonding of Au and Sn is feasible. At a longer bonding time of 3.0 s, cracks and voids were found in the joints due to excessive ultrasonic energy. The IMC (intermetallic compound) between the Sn layer and pads of the RPCB was confirmed as Cu₆Sn₅. On the FPCB side, Cu₆Sn₅ and Ni₃Sn₄ were formed by contact with the facing Sn coating, and mechanically alloyed Cu_0.81Ni_0.19 was found within the pads. Meanwhile, the strength of bonded joints between FPCB and RPCB increased with bonding time up to 1.5 s and the maximum value reached 12.48 N. At 3.0 s bonding time, the strength decreased drastically, and showed 5.75 N. Footprints from the fracture surfaces showed that bonding started from the edges of the metal pads, and extended to the pad centers as ultrasonic bonding time was increased.

Direct ultrasonic bonding with transverse vibration at ambient temperature between the surface layers of the pads of FPCB and RPCB has been confirmed to be feasible.

The purpose of this paper is to understand the sliding wear response of a cast iron as influenced by applied load and changing concentration of solid lubricant (graphite) particles in oil lubricant, and operating material removal mechanisms in different sets of experimental conditions.

The sliding wear response of a grey cast iron has been examined as a function of test environment and load. Properties evaluated were wear rate, friction coefficient and frictional heating. The wear behaviour of the samples has been substantiated through the characteristics of their wear surfaces, subsurface regions and debris particles.

The wear rate and frictional heating increased with load while friction coefficient was affected in an opposite manner. The presence of oil lubricant led to a substantial improvement in wear response (in terms of decreasing wear rate, friction coefficient and frictional heating) while the presence of graphite particles in the oil lubricant proved to be still better. A critical content of graphite in the oil lubricant becomes most effective towards improving the wear response of the samples. Formation of dark patches on the wear surface, substantial subsurface deformation and fine debris led to improved wear response.

The study enables one to understand the wear behaviour of a cast iron as influenced by the changing concentration of solid lubricant (graphite) particles in the oil lubricant. It also enables one to understand the operating material removal mechanisms responsible for the observed wear characteristics of the samples under varying test conditions. The investigation helps one to see that only a critical concentration of the solid lubricant particles in oil can lead to the best wear performance of materials.

From a practical standpoint, the observations made here gain importance from the fact that solid lubricants are added frequently in oil in engineering applications but it becomes imperative to understand that only a critical concentration can lead to the best wear behaviour of materials.

The purpose of this paper is to focus on the changing dynamics of the ultrasonic consolidation (UC) process due to changes in substrate geometry. Past research points to a limiting height to width ranging from 0.7 to 1.2 on build features.

Resonances of a build feature due to a change in geometry are examined and then a simple non‐linear dynamic model of the UC process is constructed that examines how the geometry change may influence the overall dynamics of the process. This simple model is used to provide estimates of how substrate geometry affects the differential motion at the bonding interface and the amount of energy emitted by friction change due to build height. The trends of changes in natural frequency, differential motion, and frictional energy are compared to experimental limits on build height.

The paper shows that, at the nominal build, dimensions of the feature the excitation caused by the UC approach two resonances in the feature. In addition trends in regions of changes of differential motion, force of friction, and frictional energy follow the experimental limit on build height.

This paper explores several aspects of the UC process not currently found in the current literature: examining the modal properties of build features, and a lumped parameter dynamic model to account for the changes in of the substrate geometry.

Au/In isothermal solidification technique was evaluated as an alternative method for high performance die attachment. Bonding could be achieved at temperatures between 250°C ‐ 3008C for about five to ten seconds. The microstructures of the bonds were studied and their effects on the reliability analysed. The quality of the bonds depends very much on the surface waviness of the substrate. For high quality substrates, bonding was successfully achieved on 3mm × 3mm dies, which is almost one order of magnitude bigger than the die size achievable for Au/Si eutectic bonding, and the bonds show no obvious degradation after 2,800 cycles between –55°C to 125°C.