Microstructure evolution and growth behavior of Cu/SAC105/Cu joints soldered by thermo-compression bonding

Abstract

Purpose

This paper used a novel technique, which is thermo-compression bonding, and Sn-1.0Ag-0.5Cu solder to form a full intermetallic compound (IMC) Cu₃Sn joints (Cu/Cu₃Sn/Cu joints). The purpose of the study is to form high-melting-point IMC joints for high-temperature power electronics applications. The study also investigated the effect of temperature gradient on the microstructure evolution and the growth behavior of IMCs.

Design/methodology/approach

In this paper, the thermo-compression bonding technique was used to form full Cu₃Sn joints.

Findings

Experimental results indicated that full Cu/Cu3Sn/Cu solder joints with the thickness of about 5-6 µm are formed in a short time of 9.9 s and under a low pressure of 0.016 MPa at 450°C by thermo-compression bonding technique. During the bonding process, Cu₆Sn₅ grew with common scallop-like shape at Cu/SAC105 interfaces, which was followed by the growth of Cu₃Sn with planar-like shape between Cu/Cu6Sn5 interfaces. Meanwhile, the morphology of Cu₃Sn transformed from a planar-like shape to wave-like shape until full IMCs solder joints were eventually formed during thermo-compression bonding process. Asymmetrical growth behavior of the interfacial IMCs was also clearly observed at both ends of the Cu/SAC105 (Sn-1.0Ag-0.5Cu)/Cu solder joints. Detailed reasons for the asymmetrical growth behavior of the interfacial IMCs during thermo-compression bonding process are given. The compound of Ag element causes a reduction in Cu dissolution rate from the IMC into the solder solution at the hot end, inhibiting the growth of IMCs at the cold end.

Originality/value

This study used the thermo-compression bonding technique and Sn-1.0Ag-0.5Cu to form full Cu₃Sn joints.

Citation

Guo, M., Sun, F. and Yin, Z. (2019), "Microstructure evolution and growth behavior of Cu/SAC105/Cu joints soldered by thermo-compression bonding", Soldering & Surface Mount Technology, Vol. 31 No. 4, pp. 227-232. https://doi.org/10.1108/SSMT-08-2018-0025