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Article
Publication date: 27 July 2012

Muhammad Kashif, Uda Hashim, Eaqub Ali, Ala'eddin A. Saif, Syed Muhammad Usman Ali and Magnus Willander

The purpose of this paper is to investigate the electrical transport mechanism of the Al‐doped ZnO nanorods at different temperatures by employing impedance spectroscopy.

Abstract

Purpose

The purpose of this paper is to investigate the electrical transport mechanism of the Al‐doped ZnO nanorods at different temperatures by employing impedance spectroscopy.

Design/methodology/approach

Al‐doped ZnO nanorods were grown on silicon substrate using step sol‐gel method. For the seed solution preparation Zinc acetate dihydrate, 2‐methoxyethanol, monoethanolamine and aluminum nitrite nano‐hydrate were used as a solute, solvent, stabilizer and dopant, respectively. Prior to the deposition, P‐type Si (100) wafer was cut into pieces of 1 cm×2 cm. The samples were then cleaned in an ultrasonic bath with acetone, ethanol, and de‐ionized (DI) water for 5 min. The prepared seed solution was coated on silicon substrate using spin coater at spinning speed of 3000 rpm for 30 s and then dried at 250°C for 10 min followed by annealing at 550°C for 1 h. The hydrothermal growth was carried out in a solution of zinc nitrate hexahydrate (0.025M), Hexamethyltetramine (0.025M) in DI water.

Findings

Al‐doped ZnO nanorods were characterized using scanning electron microscope (SEM), X‐ray diffraction (XRD) and impedance spectroscopy. The impedance measurements were carried out at various temperatures (100°C‐325°C). The impedance results showed that temperature has great influence on the impedance; the impedance value decreased as the temperature increased. This decrement is attributed to the increase of the mobility of the defects, especially the oxygen vacancies. The surface morphology of the samples was measured by SEM and X‐ray diffraction. The SEM images show that the high density of Al‐doped ZnO nanorods covers the silicon substrate, whereas the XRD pattern shows the (002) crystal orientation.

Originality/value

This paper demonstrates the electron transport mechanism of Al‐doped ZnO nanorods, at different temperatures, to understand the charge transport model.

Details

Microelectronics International, vol. 29 no. 3
Type: Research Article
ISSN: 1356-5362

Keywords

Article
Publication date: 23 August 2022

Shireen Mohammed Abed, Sabah M. Mohammad, Zainuriah Hassan, Aminu Muhammad and Suvindraj Rajamanickam

The purpose of this study is to fabricate an ultraviolet (UV) metal-semiconductor-metal (MSM) photodetector based on zinc oxide nanorods (ZnO NRs) grown on seeded silicon (Si…

Abstract

Purpose

The purpose of this study is to fabricate an ultraviolet (UV) metal-semiconductor-metal (MSM) photodetector based on zinc oxide nanorods (ZnO NRs) grown on seeded silicon (Si) substrate that was prepared by a low-cost method (drop-casting technique).

Design/methodology/approach

The drop-casting method was used for the seed layer deposition, the hydrothermal method was used for the growth of ZnO NRs and subsequent fabrication of UV MSM photodetector was done using the direct current sputtering technique. The performance of the fabricated MSM devices was investigated by current–voltage (I–V) measurements. The photodetection mechanism of the fabricated device was discussed.

Findings

Semi-vertically high-density ZnO (NRs) were effectively produced with a preferential orientation along the (002) direction, and increased crystallinity is confirmed by X-ray diffraction analysis. Photoluminescence results show a high UV region. The fabricated MSM UV photodetector showed that the ZnO (NRs) MSM device has great stability over time, high photocurrent, good sensitivity and high responsivity under 365 nm wavelength illumination and 0 V, 1 V, 2 V and 3 V applied bias. The responsivity and sensitivity for the fabricated ZnO NRs UV photodetector are 0.015 A W-1, 0.383 A W-1, 1.290 A W-1 and 1.982 A W-1 and 15,030, 42.639, 100.173 and 334.029, respectively, under UV light (365 nm) illumination at (0 V, 1 V, 2 V and 3 V).

Originality/value

This paper uses the drop-casting technique and the hydrothermal method as simple and low-cost methods to fabricate and improve the ZnO NRs photodetector.

Details

Microelectronics International, vol. 40 no. 1
Type: Research Article
ISSN: 1356-5362

Keywords

Article
Publication date: 26 July 2013

Muhammad Kashif and Uda Hashim

The purpose of the current research is to use impedance spectroscopy to study the AC parameters that varied with frequency such as impedance, dielectric constant and conductivity…

Abstract

Purpose

The purpose of the current research is to use impedance spectroscopy to study the AC parameters that varied with frequency such as impedance, dielectric constant and conductivity of ZnO nanorods MSM structure in the range of 1 Hz to 10 MHz under atmospheric conditions.

Design/methodology/approach

ZnO nanorods were grown on glass substrate using low cost sol‐gel method. 0.35 M seed solution was prepared by dissolving zinc acetate dihydrate in 2‐methoxyethanol and monoethanolamine which acts as a stabilizer was added drop‐wise. Prior to the deposition, glass slide was cut into pieces of 1.5 cm×2 cm. Ultra‐sonication process is used to clean the glass substrate using acetone, ethanol, and de‐ionized (DI) water for 5 min. The prepared seed solution was coated on glass substrate using spin coater at spinning speed of 3000 rpm for 30 s and then dried at 250°C for 10 min followed by annealing at 550°C for 2 h. The hydrothermal growth was carried out in aqueous solution of zinc nitrate hexahydrate (25 mM), hexamethyltetramine (25 mM).

Findings

ZnO nanorods were characterized using scanning electron microscope (SEM), X‐ray diffraction (XRD) and impedance spectroscopy. The real part of impedance (Z′) showed two semicircles that correspond to the distribution of the grain boundaries and electrode process. SEM image showed the densely packed ZnO nanorods on the surface of glass substrate, whereas XRD revealed the grown nanorods have c‐axis orientation. The results show that the impedance dielectric increases as the frequency decreases while the conductivity showed the opposite behavior.

Originality/value

This paper demonstrates the electron transport mechanism of ZnO nanorods at room temperature to understand the frequency dependent parameters.

Details

Microelectronics International, vol. 30 no. 3
Type: Research Article
ISSN: 1356-5362

Keywords

Article
Publication date: 4 May 2020

Anh Thi Le and Swee-Yong Pung

This paper aims to investigate the reusability of metal/metal oxide-coupled ZnO nanorods (ZnO NRs) to degrade rhodamine B (RhB).

Abstract

Purpose

This paper aims to investigate the reusability of metal/metal oxide-coupled ZnO nanorods (ZnO NRs) to degrade rhodamine B (RhB).

Design/methodology/approach

ZnO NRs particles were synthesized by precipitation method and used to remove various types of metal ions such as Cu2+, Ag+, Mn2+, Ni2+, Pb2+, Cd2+ and Cr2+ ions under UV illumination. The metal/metal oxide-coupled ZnO NRs were characterized by scanning electron microscope, X-ray diffraction and UV-Vis diffuse reflectance. The photodegradation of RhB dye by these metal/metal oxide-coupled ZnO NRs under UV exposure was assessed.

Findings

The metal/metal oxide-coupled ZnO NRs were successfully reused to remove RhB dye in which more than >90% of RhB dye was degraded under UV exposure. Furthermore, the coupling of Ag, CuO, MnO2, Cd and Ni particles onto the surface of ZnO NRs even enhanced the degradation of dye. The dominant reactive species involved in the degradation of RhB dye were OH- and O2-free radicals.

Research limitations/implications

The coupling of metal/metal oxide onto the surface of ZnO NRs after metal ions removal could affect the photocatalytic performance of ZnO NRs in the degradation of organic pollutants in subsequent stage.

Practical implications

A good reusability performance of metal/metal oxide-coupled ZnO NRs make ZnO NRs become a desirable photocatalyst material for the treatment of wastewater, which consists of both heavy metal ions and organic dyes.

Originality/value

Metal/metal oxide coupling onto the surface of ZnO NRs particles improved subsequent UV-assisted photocatalytic degradation of RhB dye.

Details

Pigment & Resin Technology, vol. 50 no. 1
Type: Research Article
ISSN: 0369-9420

Keywords

Article
Publication date: 9 September 2021

Iyappan Gunasekaran, Govindaraj Rajamanickam, Santhosh Narendiran, Ramasamy Perumalsamy, Kiruthika Ramany and Radha Sankararajan

Various approaches have been made to alter the vibration sensing properties of zinc oxide (ZnO) films to achieve high sensitivity. This paper aims to report the experimental study…

Abstract

Purpose

Various approaches have been made to alter the vibration sensing properties of zinc oxide (ZnO) films to achieve high sensitivity. This paper aims to report the experimental study of the fabrication of precursor molar ratio concentration varied ZnO nanostructures grown on rigid substrates using the refresh hydrothermal method. The effect of these fabricated ZnO nanostructures-based vibration sensors was experimentally investigated using a vibration sensing setup.

Design/methodology/approach

ZnO nanostructures have been grown using low temperature assisted refresh hydrothermal method with different precursor molar concentrations 0.025 M (R1), 0.075 M (R2) and 0.125 M (R3). Poly 3,4-ethylenedioxythiophene polystyrene sulfonate, a p-type material is spun coated on the grown ZnO nanostructures. Structural analysis reveals the increased intensity of the (002) plane and better c-axis orientation of the R2 and R3 sample comparatively. Morphological examination shows the changes in the grown nanostructures upon increasing the precursor molar concentration. The optical band gap value decreases from 3.11 eV to 3.08 eV as the precursor molar concentration is increased. Photoconductivity study confirms the formation of a p-n junction with less turn-on voltage for all the fabricated devices. A less internal resistance of 0.37 kΩ was obtained from Nyquist analysis for R2 compared with the other two fabricated samples. Vibration testing experimentation showed an improved output voltage of the R2 sample (2.61 V at 9 Hz resonant frequency and 2.90 V for 1 g acceleration) comparatively. This also gave an increased sensitivity of 4.68 V/g confirming its better performance when compared to the other fabricated two samples.

Findings

Photoconductivity study confirms the formation of a p-n junction with less turn-on voltage for all the fabricated devices. A less internal resistance of 0.37 kΩ was calculated from the Nyquist plot. Vibration testing experimentation proves an increased sensitivity of 4.68 V/g confirming its better performance when compared to the other fabricated two samples.

Originality/value

Vibration testing experimentation proves an increased sensitivity of 4.68 V/g for R2 confirming its better performance when compared to the other fabricated two samples.

Details

Circuit World, vol. 49 no. 2
Type: Research Article
ISSN: 0305-6120

Keywords

Article
Publication date: 8 July 2022

Syafiqah Ishak, Shazlina Johari, Muhammad Mahyiddin Ramli and Darminto Darminto

This review aims to give an overview about zinc oxide (ZnO) based gas sensors and the role of doping in enhancing the gas sensing properties. Gas sensors based on ZnO thin film…

Abstract

Purpose

This review aims to give an overview about zinc oxide (ZnO) based gas sensors and the role of doping in enhancing the gas sensing properties. Gas sensors based on ZnO thin film are preferred for sensing applications because of their modifiable surface morphology, very large surface-to-volume ratio and superior stability due to better crystallinity. The gas detection mechanism involves surface reaction, in which the adsorption of gas molecules on the ZnO thin film affects its conductivity and reduces its electrical properties. One way to enhance the gas sensing properties is by doping ZnO with other elements. A few of the common and previously used dopants include tin (Sn), nickel (Ni) and gallium (Ga).

Design/methodology/approach

In this brief review, previous works on doped-ZnO formaldehyde sensing devices are presented and discussed.

Findings

Most devices provided good sensing performance with low detection limits. The reported operating temperatures were within the range of 200̊C –400̊C. The performance of the gas sensors can be improved by modifying their nanostructures and/or adding dopants.

Originality/value

As of yet, a specific review on formaldehyde gas sensors based on ZnO metal semiconductors has not been done.

Details

Sensor Review, vol. 42 no. 5
Type: Research Article
ISSN: 0260-2288

Keywords

Article
Publication date: 5 June 2023

Yidong Zhang

The purpose of this paper is to study the electronic transport performance of Ag-ZnO film under dark and UV light conditions.

Abstract

Purpose

The purpose of this paper is to study the electronic transport performance of Ag-ZnO film under dark and UV light conditions.

Design/methodology/approach

Ag-doped ZnO thin films were prepared on fluorine thin oxide (FTO) substrates by sol-gel method. The crystal structure of ZnO and Ag-ZnO powders was tested by X-ray diffraction with Cu Kα radiation. The absorption spectra of ZnO and Ag-ZnO films were recorded by a UV–visible spectrophotometer. The micro electrical transport performance of Ag-ZnO thin films in dark and light state was investigated by photoassisted conductive atomic force microscope (PC-AFM).

Findings

The results show that the dark reverse current of Ag-ZnO films does not increase, but the reverse current increases significantly under illumination, indicating that the response of Ag-ZnO films to light is greatly improved, owing to the formation of Ohmic contact.

Originality/value

To the best of the author’s knowledge, the micro electrical transport performance of Ag-ZnO thin films in dark and light state was firstly investigated by PC-AFM.

Details

Microelectronics International, vol. 41 no. 2
Type: Research Article
ISSN: 1356-5362

Keywords

Article
Publication date: 29 April 2014

Qazi Humayun, Muhammad Kashif and Uda Hashim

– The purpose of this study was to investigate the performance of a single-bridge ZnO nanorod as a photodetector.

Abstract

Purpose

The purpose of this study was to investigate the performance of a single-bridge ZnO nanorod as a photodetector.

Design/methodology/approach

The fabrication of the design sensor with ∼6-μm gap Schottky contacts and bridging of the ZnO nanorod were based on conventional photolithography and wet-etching technique. Prior to bridging, the ZnO nanorods were grown by the hydrothermal process. The 0.35 M seed solution was prepared by dissolving zinc acetate dihydrate in 2-methoxyethanol, and monoethanolamine, which acts as a stabilizer, was added drop-wise. Before starting the solution deposition, and oxide, titanium (Ti) and gold (Au) layer deposition, p-type (100) silicon substrate was cleaned with Radio Corporation of America (RCA1) and RCA2, followed by dipping in diluted hydrofluoric acid. The aged solution was dropped onto the surface of the Au microgap structure, using a spin coater at a spinning speed of 3,000 rpm for 45 seconds, and then dried at 300°C for 15 minutes, followed by annealing at 400°C for 1 hour. The hydrothermal growth was carried out in an aqueous solution of zinc nitrate hexahydrate (0.025 M) and hexamethyltetramine (0.025 M).

Findings

In this study, ZnO nanorods were grown on a SiO2 substrate by the hydrothermal method. Microgap electrodes with ∼6-μm spacing were achieved by using the wet-etching process. After the growth process, an area-selective mask was utilized to reduce the number of rods between the nearby gap areas. The obtained single ZnO nanorod was tested for the UV-sensing application. The single ZnO nanorod photodetector exhibited a UV photoresponse, thereby indicating potential as a cost-effective UV detector. The response and recovery times of the fabricated device were 65 and 95 seconds, respectively. Structural analysis was captured using X-ray Diffraction (XRD), whereas surface morphology was determined using scanning electron microscopy.

Originality/value

This paper demonstrates the effect of UV photon on a single-bridge ZnO nanorod between microgap electrodes.

Details

Microelectronics International, vol. 31 no. 2
Type: Research Article
ISSN: 1356-5362

Keywords

Article
Publication date: 1 January 2024

Xingxing Li, Shixi You, Zengchang Fan, Guangjun Li and Li Fu

This review provides an overview of recent advances in electrochemical sensors for analyte detection in saliva, highlighting their potential applications in diagnostics and health…

Abstract

Purpose

This review provides an overview of recent advances in electrochemical sensors for analyte detection in saliva, highlighting their potential applications in diagnostics and health care. The purpose of this paper is to summarize the current state of the field, identify challenges and limitations and discuss future prospects for the development of saliva-based electrochemical sensors.

Design/methodology/approach

The paper reviews relevant literature and research articles to examine the latest developments in electrochemical sensing technologies for saliva analysis. It explores the use of various electrode materials, including carbon nanomaterial, metal nanoparticles and conducting polymers, as well as the integration of microfluidics, lab-on-a-chip (LOC) devices and wearable/implantable technologies. The design and fabrication methodologies used in these sensors are discussed, along with sample preparation techniques and biorecognition elements for enhancing sensor performance.

Findings

Electrochemical sensors for salivary analyte detection have demonstrated excellent potential for noninvasive, rapid and cost-effective diagnostics. Recent advancements have resulted in improved sensor selectivity, stability, sensitivity and compatibility with complex saliva samples. Integration with microfluidics and LOC technologies has shown promise in enhancing sensor efficiency and accuracy. In addition, wearable and implantable sensors enable continuous, real-time monitoring of salivary analytes, opening new avenues for personalized health care and disease management.

Originality/value

This review presents an up-to-date overview of electrochemical sensors for analyte detection in saliva, offering insights into their design, fabrication and performance. It highlights the originality and value of integrating electrochemical sensing with microfluidics, wearable/implantable technologies and point-of-care testing platforms. The review also identifies challenges and limitations, such as interference from other saliva components and the need for improved stability and reproducibility. Future prospects include the development of novel microfluidic devices, advanced materials and user-friendly diagnostic devices to unlock the full potential of saliva-based electrochemical sensing in clinical practice.

Details

Sensor Review, vol. 44 no. 1
Type: Research Article
ISSN: 0260-2288

Keywords

Article
Publication date: 25 January 2011

L.S. Chuah, Z. Hassan, S.S. Tneh and S.G. Teo

The purpose of this paper is to demonstrate the n‐ZnO/p‐Si Schottky photodiodes.

Abstract

Purpose

The purpose of this paper is to demonstrate the n‐ZnO/p‐Si Schottky photodiodes.

Design/methodology/approach

A Zn film was deposited on silicon substrate by dc sputtering deposition technology from high purity zinc (Zn) targets. Then, the Zn films were then annealed under flowing oxygen (O2) gas environment in the furnace. ZnO nanorods morphologies have been successfully prepared through a simple method. No catalyst is required.

Findings

The structures and morphologies of the products were characterized in detail by using X‐ray diffraction, energy dispersive X‐ray, and scanning electron microscopy (SEM). According to experimental results, the current‐voltage characteristics of the device show the typical rectifying behaviour of Schottky diodes. The UV photocurrent measurement was performed using an UV lamp under a reverse bias.

Originality/value

The paper demonstrates that the n‐ZnO/p‐Si diodes exhibit strong rectifying conduct described by the current‐voltage (I‐V) measurement under a dark and illumination conditions.

Details

Microelectronics International, vol. 28 no. 1
Type: Research Article
ISSN: 1356-5362

Keywords

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