Formaldehyde gas sensing using metal oxide semiconductor: a brief review

Abstract

Purpose

This review aims to give an overview about zinc oxide (ZnO) based gas sensors and the role of doping in enhancing the gas sensing properties. Gas sensors based on ZnO thin film are preferred for sensing applications because of their modifiable surface morphology, very large surface-to-volume ratio and superior stability due to better crystallinity. The gas detection mechanism involves surface reaction, in which the adsorption of gas molecules on the ZnO thin film affects its conductivity and reduces its electrical properties. One way to enhance the gas sensing properties is by doping ZnO with other elements. A few of the common and previously used dopants include tin (Sn), nickel (Ni) and gallium (Ga).

Design/methodology/approach

In this brief review, previous works on doped-ZnO formaldehyde sensing devices are presented and discussed.

Findings

Most devices provided good sensing performance with low detection limits. The reported operating temperatures were within the range of 200̊C –400̊C. The performance of the gas sensors can be improved by modifying their nanostructures and/or adding dopants.

Originality/value

As of yet, a specific review on formaldehyde gas sensors based on ZnO metal semiconductors has not been done.

Citation

Ishak, S., Johari, S., Ramli, M.M. and Darminto, D. (2022), "Formaldehyde gas sensing using metal oxide semiconductor: a brief review", Sensor Review, Vol. 42 No. 5, pp. 554-567. https://doi.org/10.1108/SR-04-2021-0136