The purpose of this paper is to demonstrate the n‐ZnO/p‐Si Schottky photodiodes.
A Zn film was deposited on silicon substrate by dc sputtering deposition technology from high purity zinc (Zn) targets. Then, the Zn films were then annealed under flowing oxygen (O2) gas environment in the furnace. ZnO nanorods morphologies have been successfully prepared through a simple method. No catalyst is required.
The structures and morphologies of the products were characterized in detail by using X‐ray diffraction, energy dispersive X‐ray, and scanning electron microscopy (SEM). According to experimental results, the current‐voltage characteristics of the device show the typical rectifying behaviour of Schottky diodes. The UV photocurrent measurement was performed using an UV lamp under a reverse bias.
The paper demonstrates that the n‐ZnO/p‐Si diodes exhibit strong rectifying conduct described by the current‐voltage (I‐V) measurement under a dark and illumination conditions.
Chuah, L., Hassan, Z., Tneh, S. and Teo, S. (2011), "Study of electrical characteristics of ZnO Schottky photodiode on Si substrate", Microelectronics International, Vol. 28 No. 1, pp. 8-11. https://doi.org/10.1108/13565361111097065Download as .RIS
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