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Fabrication of UV ZnO NRS photodetector based on seeded silicon substrate via the drop-casting technique

Shireen Mohammed Abed (Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Penang, Malaysia and Department of Physics, College Education for Pure Sciences, University of Anbar, Ramadi, Iraq)
Sabah M. Mohammad (Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Penang, Malaysia)
Zainuriah Hassan (Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Penang, Malaysia)
Aminu Muhammad (Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Penang, Malaysia and Department of Physics, Sule Lamido University, Kafin Hausa, Nigeria)
Suvindraj Rajamanickam (Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Penang, Malaysia)

Microelectronics International

ISSN: 1356-5362

Article publication date: 23 August 2022

Issue publication date: 2 January 2023

33

Abstract

Purpose

The purpose of this study is to fabricate an ultraviolet (UV) metal-semiconductor-metal (MSM) photodetector based on zinc oxide nanorods (ZnO NRs) grown on seeded silicon (Si) substrate that was prepared by a low-cost method (drop-casting technique).

Design/methodology/approach

The drop-casting method was used for the seed layer deposition, the hydrothermal method was used for the growth of ZnO NRs and subsequent fabrication of UV MSM photodetector was done using the direct current sputtering technique. The performance of the fabricated MSM devices was investigated by current–voltage (I–V) measurements. The photodetection mechanism of the fabricated device was discussed.

Findings

Semi-vertically high-density ZnO (NRs) were effectively produced with a preferential orientation along the (002) direction, and increased crystallinity is confirmed by X-ray diffraction analysis. Photoluminescence results show a high UV region. The fabricated MSM UV photodetector showed that the ZnO (NRs) MSM device has great stability over time, high photocurrent, good sensitivity and high responsivity under 365 nm wavelength illumination and 0 V, 1 V, 2 V and 3 V applied bias. The responsivity and sensitivity for the fabricated ZnO NRs UV photodetector are 0.015 A W-1, 0.383 A W-1, 1.290 A W-1 and 1.982 A W-1 and 15,030, 42.639, 100.173 and 334.029, respectively, under UV light (365 nm) illumination at (0 V, 1 V, 2 V and 3 V).

Originality/value

This paper uses the drop-casting technique and the hydrothermal method as simple and low-cost methods to fabricate and improve the ZnO NRs photodetector.

Keywords

Acknowledgements

The authors would like to thank the Institute of Nano Optoelectronics Research and Technology (INOR) and the School of Physics at Universiti Sains University (USM) for supporting this research and providing the appropriate research environment. Our gratitude also goes to the Research Creativity and Management Office (RCMO) USM, for supporting us with the Short-Term grant (304. CINOR.6315364).

Citation

Abed, S.M., Mohammad, S.M., Hassan, Z., Muhammad, A. and Rajamanickam, S. (2023), "Fabrication of UV ZnO NRS photodetector based on seeded silicon substrate via the drop-casting technique", Microelectronics International, Vol. 40 No. 1, pp. 35-45. https://doi.org/10.1108/MI-03-2022-0046

Publisher

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Emerald Publishing Limited

Copyright © 2022, Emerald Publishing Limited

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