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Wide-bandgap (WBG) semiconductors have emerged as a disruptive technology in the power electronics sphere. This paper aims to analyse and discuss the importance for induction heating systems and gives some examples and highlights some future design trends and perspectives.

The benefits of WBG semiconductors are reviewed with a special emphasis on induction heating applications.

WBG devices enable the design of higher-performance induction heating power supplies. A significant selection of the reported converters is discussed, highlighting the benefits of this technology.

This paper highlights the benefits of WBG semiconductors and their potential to change and improve induction heating technology in the next years.

A non‐local pseudopotential model is used to generate realistic bandstructure for InP and GaAs. This is used to calculate the thresholds for impact ionisation and ionisation rates in these materials as a function of direction in wavevector space. Results are presented for a range of transitions.

This review aims to give an overview about zinc oxide (ZnO) based gas sensors and the role of doping in enhancing the gas sensing properties. Gas sensors based on ZnO thin film are preferred for sensing applications because of their modifiable surface morphology, very large surface-to-volume ratio and superior stability due to better crystallinity. The gas detection mechanism involves surface reaction, in which the adsorption of gas molecules on the ZnO thin film affects its conductivity and reduces its electrical properties. One way to enhance the gas sensing properties is by doping ZnO with other elements. A few of the common and previously used dopants include tin (Sn), nickel (Ni) and gallium (Ga).

In this brief review, previous works on doped-ZnO formaldehyde sensing devices are presented and discussed.

Most devices provided good sensing performance with low detection limits. The reported operating temperatures were within the range of 200̊C –400̊C. The performance of the gas sensors can be improved by modifying their nanostructures and/or adding dopants.

As of yet, a specific review on formaldehyde gas sensors based on ZnO metal semiconductors has not been done.

The purpose of this paper is to study the high-frequency impacts of fast switching wide-bandgap transistors on electronic and motor designs. The high-frequency power converters, dedicated to driving high-speed motors, require specific models to design predictively electronic and motors.

From magnetic and electric models, the high-frequency parasitic elements for both electronics and motor are determined. Then, high-frequency circuit models accounting for of parasitic element extractions are built to study the wide bandgap transistors commutations and their impacts on motor windings.

The results of the models, for electronics and motors, are promising. The high-frequency commutation cell study is used to optimize the layouts and to improve the commutation behaviours and performances. The impact of the switching speed is highlighted on the winding voltage susceptibility. Then, the switching frequency and commutation rapidity can be both optimized to increase the performance of motor and electronics. The electronic model is validated by experimentations.

The method can be only applied to the existing motor and electronic designs. It is not taken into account in an automized global high-frequency optimizer.

Helped by magnetic and electric FEA calculations where the parasitic element extractions are performed. The switching frequency and commutation rapidity can be both optimized to increase the performance of motor and electronics.

This study aims to investigate the effects of indium composition on surface morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN) heterostructures.

The InGaN/GaN heterostructures were grown on flat sapphire substrates using a metal-organic chemical vapour deposition reactor with a trimethylindium flow rate of 368  sccm. The indium composition of the InGaN epilayers was controlled by applying different substrate temperatures. The surface morphology and topography were observed using field emission scanning electron microscope (F.E.I. Nova NanoSEM 450) and atomic force microscopy (Bruker Dimension Edge) with a scanning area of 10 µm × 10 µm, respectively. The compositional analysis was done by Energy Dispersive X-Ray Analysis. Finally, the ultraviolet-visible (UV-Vis) spectrophotometer (Agilent Technology Cary Series UV-Vis-near-infrared spectrometer) was measured from 200 nm to 1500 nm to investigate the optical properties of the samples.

The InGaN/GaN thin films have been successfully grown at three different substrate temperatures. The indium composition reduced as the temperature increased. At 760 C, the highest indium composition was obtained, 21.17%. This result was acquired from the simulation fitting of ω−2θ scan on (0002) plane using LEPTOS software by Bruker D8 Discover. The InGaN/GaN shows significantly different surface morphologies and topographies as the indium composition increases. The thickness of InGaN epilayers of the structure was ∼300 nm estimated from the field emission scanning electron microscopy. The energy bandgap of the InGaN was 2.54 eV – 2.79 eV measured by UV-Vis measurements.

It can be seen from this work that changes in substrate temperature can affect the indium composition. From all the results obtained, this work can be helpful towards efficiency improvement in solar cell applications.

The aims of this paper is to study the effects of the V/III ratio of indium gallium nitride (InGaN) quantum wells (QWs) on the structural, optical and electrical properties of near-ultraviolet light-emitting diode (NUV-LED).

InGaN-based NUV-LED is successfully grown on the c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition.

The indium composition and thickness of InGaN QWs increased as the V/III ratio increased from 20871 to 11824, according to high-resolution X-ray diffraction. The V/III ratio was also found to have an important effect on the surface morphology of the InGaN QWs and thus the surface morphology of the subsequent layers. Apart from that, the electroluminescence measurement revealed that the V/III ratio had a major impact on the light output power (LOP) and the emission peak wavelength of the NUV-LED. The LOP increased by up to 53% at 100 mA, and the emission peak wavelength of the NUV-LED changed to a longer wavelength as the V/III ratio decreased from 20871 to 11824.

This study discovered a relation between the V/III ratio and the properties of QWs, which resulted in the LOP enhancement of the NUV-LED. High TMIn flow rates, which produced a low V/III ratio, contribute to the increased LOP of NUV-LED.

The purpose of this study is to present a systematic investigation of the effect of high temperatures on transport characteristics of nitrogen-doped silicon carbide nanowire-based field-effect transistor (SiC-NWFET). The 3C-SiC nanowires can endure high-temperature environments due to their wide bandgap, high thermal conductivity and outstanding physical and chemical properties.

The metal-organic chemical vapor deposition process was used to synthesize in-situ nitrogen-doped SiC nanowires on SiO₂/Si substrate. To fabricate the proposed SiC-NWFET device, the dielectrophoresis method was used to integrate the grown nanowires on the surface of pre-patterned electrodes onto the SiO₂ layer on a highly doped Si substrate. The transport properties of the fabricated device were evaluated at various temperatures ranging from 25°C to 350°C.

The SiC-NWFET device demonstrated an increase in conductance (from 0.43 mS to 1.2 mS) after applying a temperature of 150°C, and then a decrease in conductance (from 1.2 mS to 0.3 mS) with increasing the temperature to 350°C. The increase in conductance can be attributed to the thermionic emission and tunneling mechanisms, while the decrease can be attributed to the phonon scattering. Additionally, the device revealed high electron and hole mobilities, as well as very low resistivity values at both room temperature and high temperatures.

High-temperature transport properties (above 300°C) of 3C-SiC nanowires have not been reported yet. The SiC-NWFET demonstrates a high transconductance, high electron and hole mobilities, very low resistivity, as well as good stability at high temperatures. Therefore, this study could offer solutions not only for high-power but also for low-power circuit and sensing applications in high-temperature environments (∼350°C).

The purpose of this paper is to propose a new structure of GaN based metal‐semiconductor‐metal (MSM) photodiode, in which a thin unintentionally doped n‐type AlGaN layer is added on the conventional GaN on Si(111) device structure.

A thin Al_0.50Ga_0.50N cap layer of 100 nm was incorporated in GaN MSM photodiode to enhance the effective Schottky barrier height and reduce the dark current. When the incident light with photon energy higher than the band edge of GaN but lower than the bandgap of AlGaN illuminates the front face of photodiode, the light can be transparent in the top AlGaN layer and is only absorbed by the GaN layer. As a result, the photogenerated carriers in the GaN layer would be influenced by the interface states of AlGaN/GaN. It is known that the density of the interface states is normally lower than that of surface states, so the recombination of photogenerated electron‐hole pairs will be reduced. A barrier height of 0.54 eV for normal GaN MSM photodiode was increased to the effective barrier height of 0.60 eV.

The resulting MSM photodiode shows a dark current of as low as 8.0×10⁻⁴ A at 5 V bias, which is about two orders of magnitude lower than that of normal GaN (1.0×10⁻² A at 5 V bias) MSM photodiode.

The paper reports on barrier enhanced GaN Schottky MSM photodiode using a thin AlGaN cap layer. AlGaN cap layers were found to effectively suppress the leakage current of the GaN Schottky MSM photodiode, resulting in improved device characteristics. The dark current for the Schottky contact with the AlGaN cap layer was shown to be about about two orders of magnitude smaller than that of conventional GaN Schottky MSM photodiode.

The purpose of this study is to synthesize a semiconductor photocatalyst which responds to both UV light and visible light in removal of organic dyes.

ZnO nanoparticles were pre-synthesised via sol-gel method using zinc nitrate tetrahydrate and methanamine at 90°C for 20 h. Subsequently, the as-synthesised ZnO nanoparticles were filtered, washed and dried. To synthesize ZnO-MnO₂ core shell nanocomposites (CSNs), 2:3 M ratio of KMnO₄ and MnSO₄ solution was stirred for an hour. Next, ZnO nanoparticles were added into the solution. The solution was heated at 160°C for 3 h for the formation of ZnO-MnO₂ CSNs. The structural, optical and photocatalytic properties of ZnO-MnO₂ CSNs were characterised by field emission scanning electron microscope, transmission electron microscopy (TEM), X-ray diffractometer and PL spectroscopy, respectively.

The photodegradation efficiencies of rhodamine B (RhB) dye by ZnO-MnO₂ CSNs as photocatalysts are 87.1 per cent under UV irradiation and 76.6 per cent under visible light irradiation, respectively. Their corresponding rate constants are 0.016 min⁻¹ under UV irradiation and 0.013 min⁻¹ under visible light irradiation. It can be concluded that N-deethylation was the dominant step during the photodegradation of RhB dye as compared to cycloreversion. The ZnO-MnO₂ CSNs demonstrated good photostability after three consecutive runs.

ZnO-MnO₂ CSN photocatalyst which could response to UV and visible light in degradation of RhB dye was synthesised using sol-gel method. The analysis shows that N-deethylation was the key photodegradation mechanism of RhB by ZnO-MnO₂ CSN.

Traditional chip‐level interconnection materials show many weaknesses given the development trend of microelectronic packaging technology. In order to meet the needs of high‐temperature packaging for wide‐bandgap semiconductors, low‐temperature sintered nano‐silver as a novel semiconductor device‐metallized substrate interconnection material is being developed. One phenomenon that larger interconnection area would cause poor interconnection quality had been found in the industry butut the mechanisms were never previously studied. This paper aims to address these issues.

The changes in the shear strengths and microstructures of nano‐silver joints induced by the changes of interconnection areas were investigated by shear tests and scanning electron microscopy.

The increased interconnection area blocks the organic components to be burnout and causes a higher pore ratio. Thus, it reduces the bonding quality. To ensure a good and steady sintering quality, the interconnection area should be limited to 3 × 3 mm².

A sintering technology or paste with oxygen agent will be studied in the future.

A relationship of shear strength and interconnection area of sintering joints with nano‐silver paste was observed.