Traditional chip‐level interconnection materials show many weaknesses given the development trend of microelectronic packaging technology. In order to meet the needs of high‐temperature packaging for wide‐bandgap semiconductors, low‐temperature sintered nano‐silver as a novel semiconductor device‐metallized substrate interconnection material is being developed. One phenomenon that larger interconnection area would cause poor interconnection quality had been found in the industry butut the mechanisms were never previously studied. This paper aims to address these issues.
The changes in the shear strengths and microstructures of nano‐silver joints induced by the changes of interconnection areas were investigated by shear tests and scanning electron microscopy.
The increased interconnection area blocks the organic components to be burnout and causes a higher pore ratio. Thus, it reduces the bonding quality. To ensure a good and steady sintering quality, the interconnection area should be limited to 3 × 3 mm2.
A sintering technology or paste with oxygen agent will be studied in the future.
A relationship of shear strength and interconnection area of sintering joints with nano‐silver paste was observed.
Qi, K., Chen, X. and Lu, G. (2008), "Effect of interconnection area on shear strength of sintered joint with nano‐silver paste", Soldering & Surface Mount Technology, Vol. 20 No. 1, pp. 8-12. https://doi.org/10.1108/09540910810861431Download as .RIS
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