THE USE OF REALISTIC BANDSTRUCTURE IN IMPACT IONISATION CALCULATIONS FOR WIDE BANDGAP SEMICONDUCTORS: APPLICATION TO INP AND GaAS

S.P. Wilson (Department of Physics, University of Durham South Road, DURHAM DH1 3LE, U.K.)
S. Brand (Department of Physics, University of Durham South Road, DURHAM DH1 3LE, U.K.)
A.R. Beattie (Lower Leanassie, Kilmorack by Beauly, Inverness‐shire IV4 7AF, SCOTLAND)
R.A. Abram (Department of Physics, University of Durham South Road, DURHAM DH1 3LE, U.K.)

Abstract

A non‐local pseudopotential model is used to generate realistic bandstructure for InP and GaAs. This is used to calculate the thresholds for impact ionisation and ionisation rates in these materials as a function of direction in wavevector space. Results are presented for a range of transitions.

Citation

Wilson, S., Brand, S., Beattie, A. and Abram, R. (1993), "THE USE OF REALISTIC BANDSTRUCTURE IN IMPACT IONISATION CALCULATIONS FOR WIDE BANDGAP SEMICONDUCTORS: APPLICATION TO INP AND GaAS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 12 No. 4, pp. 457-473. https://doi.org/10.1108/eb051819

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MCB UP Ltd

Copyright © 1993, MCB UP Limited

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