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The purpose of this study is to present a systematic investigation of the effect of high temperatures on transport characteristics of nitrogen-doped silicon carbide nanowire-based field-effect transistor (SiC-NWFET). The 3C-SiC nanowires can endure high-temperature environments due to their wide bandgap, high thermal conductivity and outstanding physical and chemical properties.

The metal-organic chemical vapor deposition process was used to synthesize in-situ nitrogen-doped SiC nanowires on SiO₂/Si substrate. To fabricate the proposed SiC-NWFET device, the dielectrophoresis method was used to integrate the grown nanowires on the surface of pre-patterned electrodes onto the SiO₂ layer on a highly doped Si substrate. The transport properties of the fabricated device were evaluated at various temperatures ranging from 25°C to 350°C.

The SiC-NWFET device demonstrated an increase in conductance (from 0.43 mS to 1.2 mS) after applying a temperature of 150°C, and then a decrease in conductance (from 1.2 mS to 0.3 mS) with increasing the temperature to 350°C. The increase in conductance can be attributed to the thermionic emission and tunneling mechanisms, while the decrease can be attributed to the phonon scattering. Additionally, the device revealed high electron and hole mobilities, as well as very low resistivity values at both room temperature and high temperatures.

High-temperature transport properties (above 300°C) of 3C-SiC nanowires have not been reported yet. The SiC-NWFET demonstrates a high transconductance, high electron and hole mobilities, very low resistivity, as well as good stability at high temperatures. Therefore, this study could offer solutions not only for high-power but also for low-power circuit and sensing applications in high-temperature environments (∼350°C).

Field-effect transistor (FET) has excellent electronic properties and inherent signal amplification, and with the development of nanomaterials technology, FET biosensors with nanomaterials as channels play an important role in the field of heavy metal ion detection. This paper aims to review the research progress of silicon nanowire, graphene and carbon nanotube field-effect tube biosensors for heavy metal ion detection, so as to provide technical support and practical experience for the application and promotion of FET.

The article introduces the structure and principle of three kinds of FET with three kinds of nanomaterials, namely, silicon nanowires, graphene and carbon nanotubes, as the channels, and lists examples of the detection of common heavy metal ions by the three kinds of FET sensors in recent years. The article focuses on the advantages and disadvantages of the three sensors, puts forward measures to improve the performance of the FET and looks forward to its future development direction.

Compared with conventional instrumental analytical methods, FETs prepared using nanomaterials as channels have the advantages of fast response speed, high sensitivity and good selectivity, among which the diversified processing methods of graphene, the multi-heavy metal ions detection of silicon nanowires and the very low detection limit and wider detection range of carbon nanotubes have made them one of the most promising detection tools in the field of heavy metal ions detection. Of course, through in-depth analysis, this type of sensor has certain limitations, such as high cost and strict process requirements, which are yet to be solved.

This paper elaborates on the detection principle and classification of field-effect tube, investigates and researches the application status of three kinds of FET biosensors in the detection of common heavy metal ions. By comparing the advantages and disadvantages of each of the three sensors in practical applications, the paper focuses on the feasibility of improvement measures, looks forward to the development trend in the field of heavy metal detection and ultimately promotes the application of field-effect tube development technology to continue to progress, so that its performance continues to improve and the application field is constantly expanding.

This study aims to investigate photosensing characteristics of SiC and GaN nanowire-based devices through exposure to UV light. The photocurrent transients have been modeled to determine rise and decay process time constants. The 1D-semiconductor nanowires can exhibit higher light sensitivity compared to bulk materials because of their large surface area to volume ratio and the quantum size effects.

Nanowire devices have been fabricated through dielectrophoresis for integrating nanowires onto pre-patterned electrodes (10 nm Ti/ 90 nm Au) with a spacing about 3 µm onto SiO₂/Si (doped) substrate. The photocurrent measurements were carried out under room temperature conditions with UV light of 254 nm wavelength.

SiCNWs yield very short rise and decay time constants of 1.3 and 2.35 s, respectively. This fast response indicates an enhanced surface recombination of photoexcited electron-hole pairs. Conversely, GaNNWs yield longer rise and decay time constants of 10.3 and 15.4 s, respectively. This persistent photocurrent suggests a reduced surface recombination process for the GaNNWs.

High selective UV light sensitivity, small size, very short response time, low power consumption and high efficiency are the most important features of nanowire-based devices for new and superior applications in photodetectors, photovoltaics, optical switches, image sensors and biological and chemical sensing.

The purpose of this paper is to present possibility of fast and certain identification of bovine serum albumin (BSA) by means of ion-sensitive field effect transistor (ISFET) structures. Because BSA can cause allergic reactions in humans, it is one of reasons for development of sensitive sensors to detect residual BSA. BSA is commonly used in biochemistry and molecular biology in laboratory experiments. Therefore, to better understand the mechanism of signal transduction in simulated biological environment and to elucidate the role of adsorption of biomolecules in the generation of a signal at the interface with biological systems, the measurements of ISFET current response in the presence of BSA as a reference protein molecule were performed.

To fabricate transistors, silicon technology was used. The ISFET structures were coupled to specially designed double-side printed circuit board holder. After modification of the field effect transistor (FET) device with 3-aminopropyltriethoxysilane (APTES), a sensor with high sensitivity toward reference biomolecules was obtained. The current–voltage (I-V) characteristics of structures with and without gate modification were measured. Keithley SMU 236/237/238 measurement set was used. Deionized water solution and 0.05 per cent BSA were used.

In this research, a method of preparation of a biosensor based on a FET was developed. Sensitivity of APTES-modified FET device toward BSA as a biomolecule was investigated. I-V relationships of FET devices (with and without modification), being the effect of the interactions with the solution containing 0.05 per cent BSA, were measured and compared to the measurements performed for solutions without BSA.

Compared to SiO₂-containing ISFETs without modification or other different dielectrics, the application of APTES as the part of the membrane induced significant increase in their sensitivity to BSA.

With the acceleration of global energy structure transformation, hydrogen has been widely used for its non-pollution and high efficiency, and hydrogen detection is used to guarantee the hydrogen safety. The purpose of this paper is to study the research foundation, trend and hotspots of hydrogen detection field.

A total of 4,076 literature records from 2000 to 2021 were retrieved from the core collection of the Web of Science database selected as data sources. The literature information mining was realized by using CiteSpace software. Bibliometrics was used to analyze information, such as keywords, authors, journals, institutions, countries and cited references, and to track research hotspots.

Since the 21st century, the number of publications in the hydrogen detection field has been in a stable stepped uptrend. In terms of research foundation, the hotspots such as core-shell structures, nano-hybrid materials and optical fiber hydrogen sensors have been studied extensively. In combination with the discipline structure and research frontier, the selectivity, sensitivity, response speed and other performance parameters of hydrogen sensors need further improvement. The establishment of an interdisciplinary knowledge system centered on materials science and electronic science will become a long-term trend in the research of hydrogen detection.

This study presents an overview of research status, hotspots and laws in hydrogen detection field, through the quantitative analysis of much literature in the field and the use of data mining, so as to provide credible references for the research of hydrogen detection technology.