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Adoption of integrated MOS based pseudo-resistor (PR) structures instead of using off-chip passive poly resistors for analog circuits in complementary metal oxide semiconductor technology (CMOS) is an area-efficient way for realizing larger time constants. However, issue of common-mode voltage shifting and excess dependency on the process and temperature variations introduce nonlinearity in such structures. So there is dire need to not only closely look for the origin of the problem with the help of a thorough mathematical analysis but also suggest the most suitable PR structure for the purpose catering broadly to biomedical analog circuit applications.

In this work, incremental resistance (IR) expressions and IR range for balanced PR (BPR) structures operating in the subthreshold region have been closely analyzed for broader range of process-voltage-temperature variations. All the post-layout simulations have been obtained using BSIM3V3 device models in 0.18 µm standard CMOS process.

The obtained results show that the pertinent problem of common-mode voltage shifting in such PR structures is completely resolved in scaled gate linearization and bulk-driven quasi-floating gate (BDQFG) BPR structures. Among all BPR structures, BDQFG BPR remarkably shows constant IR value of 1 TΩ over −1 V to 1 V voltage swing for wider process and temperature variations.

Various balanced PR design techniques reported in this work will help the research community in implementing larger time constants for analog-mixed signal circuits.

The PR design techniques presented in the present piece of work is expected to be used in developing tunable and accurate biomedical prosthetics.

The BPR structures thoroughly analyzed and reported in this work may be useful in the design of analog circuits specifically for applications such as neural signal recording, cardiac electrical impedance tomography and other low-frequency biomedical applications.

The purpose of this paper through the redundant monitoring unit reflecting the real-time temperature change of the array, an adaptive refresh circuit based on temperature is designed.

This paper proposed a circuit design for temperature-adaptive refresh with a fixed refresh frequency of traditional memory, high refresh power consumption at low temperature and low refresh frequency at high temperature.

Adding a metal oxide semiconductor (MOS) redundancy monitoring unit consistent with the storage unit to the storage bank can monitor the temperature change of the storage bank in real time, so that temperature-based memory adaptive refresh can be implemented.

According to the characteristics that the data holding time of dynamic random access memory storage unit decreases with the increase of temperature, a MOS redundant monitoring unit which is consistent with the storage unit is added to the storage array with the 2T storage unit as the core.

The primary aim of this paper is to present a novel design approach for a ring voltage-controlled oscillator (VCO) suitable for L-band applications, whose oscillation frequency is less sensitive to power supply variations. In a few decades, with the advancement of modern wireless communication equipment, there has been an increasing demand for low-power and robust communication systems for longer battery life. A sudden drop in power significantly affects the performance of the VCO. Supply insensitive circuit design is the backbone of uninterrupted VCO performance. Because of their important roles in a variety of applications, VCOs and phase locked loops (PLLs) have been the subject of significant research for decades. For a few decades, the VCO has been one of the major components used to provide a local frequency signal to the PLL.

First, this paper chose to present recent developments on implemented techniques of ring VCO design for various applications. A complementary metal oxide semiconductor (CMOS)-based supply compensation technique is presented, which aims to reduce the change in oscillation frequency with the supply. The proposed circuit is designed and simulated on Cadence Virtuoso in 0.18 µm CMOS process under 1.8 V power supply. Active differential configuration with a cross-coupled NMOS structure is designed, which eliminates losses and negates supply noise. The proposed VCO is designed for excellent performance in many areas, including the L-band microwave frequency range, supply sensitivity, occupied area, power consumption and phase noise.

This work provides the complete design aspect of a novel ring VCO design for the L-band frequency range, low phase noise, low occupied area and low power applications. The maximum value of the supply sensitivity for the proposed ring VCO is 1.31, which is achieved by changing the VDD by ±0.5%. A tuning frequency range of 1.47–1.81 GHz is achieved, which falls within the L-band frequency range. This frequency range is achieved by varying the control voltage from 0.0 to 0.8 V, which shows that the proposed ring VCO is also suitable for low voltage regions. The total power consumed by the proposed ring VCO is 14.70 mW, a remarkably low value using this large transistor count. The achievable value of phase noise is −88.76 dBc/Hz @ 1 MHz offset frequency, which is a relatively small value. The performance of the proposed ring VCO is also evaluated by the figure of merit, achieving −163.13 dBc/Hz, which assures the specificity of the proposed design. The process and temperature variation simulations also validate the proposed design. The proposed oscillator occupied an extremely small area of only 0.00019 mm² compared to contemporary designs.

The proposed CMOS-based supply compensation method is a unique design with the size and other parameters of the components used. All the data and results obtained show its originality in comparison with other designs. The obtained results are preserved to the fullest extent.

A low power flip-flop circuit is designed for energy-efficient devices. Digital sequential circuits are in huge demand because every processor has most of the parts of digital circuit. The sequential circuits consist of a basic data storing element, a latch is used to store single bit data. The flip-flop takes a sufficient portion of the total chip area and overall power consumption as well. This study aims to the low power energy-efficient applications like laptops, mobile phones and palmtops.

This paper proposes a new type of flip-flop that consists of the only 16 transistors with a single-phase clock. The flip-flop has two blocks, master and slave latch. In this design, the authors have focused on only master latch, which includes a level restoring circuit. It is used to help the master latch in data retention process. The latch circuit has two inverters in back-to-back arrangement. The proposed flip-flop is implemented on 65 nm complementary metal oxide semiconductor technology using Cadence Virtuoso environment and compared with other reported flip-flops.

The proposed flip-flop architecture outperformed the peak percentage, i.e. 79.25% as compared to transmission gate flip-flop and a minimum of 20.02% compared to 18 T true single phase clocking (TSPC) improvement in terms of power. It also improved C to Q delay and power delay product. In addition, by reducing the number of transistors the total area of the proposed flip-flop is reduced by a minimum of 13.76% with respect to 18TSPC and existing flip-flop. For reliability checking the Monte Carlo simulation is performed for thousand samples and it is compared with the recently reported 18TSPC flip-flop.

This work is tested by using a test circuit with a load capacitor of 0.2 fF. The proposed work uses a new topology to work as master-slave. Power consumption of this technique is very less and it is best suitable for low power applications. This circuit is working properly up to 2 GHz frequency.

High packaging density in the present VLSI era builds an acute power crisis, which limits the use of MOSFET device as a constituent block in CMOS technology. This leads researchers in looking for alternative devices, which can replace the MOSFET in CMOS VLSI logic design. In a quest for alternative devices, tunnel field effect transistor emerged as a potential alternative in recent times. The purpose of this study is to enhance the performances of the proposed device structure and make it compatible with circuit implementation. Finally, the performances of that circuit are compared with CMOS circuit and a comparative study is made to find the superiority of the proposed circuit with respect to conventional CMOS circuit.

Silicon–germanium heterostructure is currently one of the most promising architectures for semiconductor devices such as tunnel field effect transistor. Analytical modeling is computed and programmed with MATLAB software. Two-dimensional device simulation is performed by using Silvaco TCAD (ATLAS). The modeled results are validated through the ATLAS simulation data. Therefore, an inverter circuit is implemented with the proposed device. The circuit is simulated with the Tanner EDA tool to evaluate its performances.

The proposed optimized device geometry delivers exceptionally low OFF current (order of 10^−18 A/um), fairly high ON current (5x10^−5 A/um) and a steep subthreshold slope (20 mV/decade) followed by excellent ON–OFF current ratio (order of 10^13) compared to the similar kind of heterostructures. With a very low threshold voltage, even lesser than 0.1 V, the proposed device emerged as a good replacement of MOSFET in CMOS-like digital circuits. Hence, the device is implemented to construct a resistive inverter to study the circuit performances. The resistive inverter circuit is compared with a resistive CMOS inverter circuit. Both the circuit performances are analyzed and compared in terms of power dissipation, propagation delay and power-delay product. The outcomes of the experiments prove that the performance matrices of heterojunction Tunnel FET (HTFET)-based inverter are way ahead of that of CMOS-based inverter.

Germanium–silicon HTFET with stack gate oxide is analytically modeled and optimized in terms of performance matrices. The device performances are appreciable in comparison with the device structures published in contemporary literature. CMOS-like resistive inverter circuit, implemented with this proposed device, performs well and outruns the circuit performances of the conventional CMOS circuit at 45-nm technological node.

This paper aims to concentrate on recent innovations in flexible wearable sensor technology tailored for monitoring vital signals within the contexts of wearable sensors and systems developed specifically for monitoring health and fitness metrics.

In recent decades, wearable sensors for monitoring vital signals in sports and health have advanced greatly. Vital signals include electrocardiogram, electroencephalogram, electromyography, inertial data, body motions, cardiac rate and bodily fluids like blood and sweating, making them a good choice for sensing devices.

This report reviewed reputable journal articles on wearable sensors for vital signal monitoring, focusing on multimode and integrated multi-dimensional capabilities like structure, accuracy and nature of the devices, which may offer a more versatile and comprehensive solution.

The paper provides essential information on the present obstacles and challenges in this domain and provide a glimpse into the future directions of wearable sensors for the detection of these crucial signals. Importantly, it is evident that the integration of modern fabricating techniques, stretchable electronic devices, the Internet of Things and the application of artificial intelligence algorithms has significantly improved the capacity to efficiently monitor and leverage these signals for human health monitoring, including disease prediction.

Artificial fruit ripening is hazardous to mankind. In the recent past, artificial fruit ripening is increasing gradually due to its commercial benefits. To discriminate the type of fruit ripening involved at the vendors’ side, there is a great demand for on-sight ethylene detection in a nondestructive manner. Therefore, this study aims to deal with a comparison of various laboratory and portable methods developed so far with high-performance metrics to identify the ethylene detection at fruit ripening site.

This paper focuses on various types of technologies proposed up to date in ethylene detection, fabrication methods and signal conditioning circuits for ethylene detection in parts per million and parts per billion levels. The authors have already developed an infrared (IR) sensor to detect ethylene and also developed a lab-based setup belonging to the electrochemical sensing methods to detect ethylene for the fruit ripening application.

The authors have developed an electrochemical sensor based on multi-walled carbon nanotubes whose performance is relatively higher than the sensors that were previously reported in terms of material, sensitivity and selectivity. For identifying the best sensing technology for optimization of ethylene detection for fruit ripening discrimination process, authors have developed an IR-based ethylene sensor and also semiconducting metal-oxide ethylene sensor which are all compared with literature-based comparable parameters. This review paper mainly focuses on the potential possibilities for developing portable ethylene sensing devices for investigation applications.

The authors have elaborately discussed the new chemical and physical methods of ethylene detection and quantification from their own developed methods and also the key findings of the methods proposed by fellow researchers working on this field. The authors would like to declare that the extensive analysis carried out in this technical survey could be used for developing a cost-effective and high-performance portable ethylene sensing device for fruit ripening and discrimination applications.