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This paper aims to present a novel wireless passive pressure sensor based on an aperture coupled microstrip patch antenna embedded with an air cavity for pressure measurement.

In this paper, the sensitive membrane deformed when pressure was applied on the surface of the sensor and the relative permittivity of the mixed substrate changed, resulting in a change in the center frequency of the microstrip antenna. The size of the pressure sensor is determined by theoretical calculation and software simulation. Then, the sensor is fabricated separately as three layers using printed circuit board technology and glued together at last. The pressure test of the sensor is carried out in a sealed metal tank.

The extracted resonant frequency was found to monotonically shift from 2.219 to 1.974 GHz when the pressure varied from 0 to 300 kPa, leading to an average absolute sensitivity of 0.817 MHz/kPa.

This pressure sensor proposed here is mainly to verify the feasibility of this wireless passive maneuvering structure, and when the base material of this structure is replaced with some high-temperature-resistant material, the sensor can be used to measure the pressure inside the aircraft engine.

The sensor structure proposed here can be used to test the pressure in a high-temperature environment when the base material is replaced with some high-temperature-resistant material.

The flexibly thin film grid pressure sensor is mainly used to detect the interface pressure distribution between touching objects. Aim at larger measurement error, the strip double sensing layer pressure sensor are designed and fabricated and tested.

Defects and characteristic of the flexibly thin film grid pressure sensor based on piezoresistive effect are analyzed and pointed out in this paper. After comparison of four sensors, the strip double sensing layer pressure sensor was thought to be best.

Experiment shows that the strip double sensing layer pressure sensor could eliminate the measurement error basically and illustrates the validity of measuring the interface pressure distribution between area touching objects.

In this paper, only the strip double sensing layer pressure sensor was used to verify the validity of measuring the static interface pressure distribution between peach and platform. But there also exists some problems such as the adhering reliability of electrode and the unevenness of sensing layer. These problems could be overcome in the future research if the fabricating procedure and ingredient of material could be adjusted correctly.

The strip double sensing layer pressure sensor could be applied to detect the static interface pressure distribution such as peach pressure distribution. For dynamic measurement, this research needs to be done further.

Strip double sensing layer pressure sensor with simple “interlayer” structure and with low manufacture cost is presented to basically eliminate the measurement error of interface pressure distribution of original sensor.

The paper aims to present an innovative method for imaging the pressure distribution between two interface surfaces. The physical principles behind the design of the pressure imaging system are explained, and some case studies involving the use of this technology in diverse applications are described.

The XSENSOR pressure sensor is comprised of a matrix of capacitive sensing elements. Pressure applied to the surface of the sensing element causes a change in capacitance that is correlated to a change in pressure. Proprietary Windows based software compensates for sensor non‐linearity, hysteresis, and creep over time, resulting in enhanced accuracy.

XSENSOR's capacitive based pressure imaging sensors can graphically display pressure distributions in real time between virtually any two surfaces in contact. The sensor element is accurate, thin, flexible, and robust. These physical characteristics minimize any artificial influences created by the presence of the sensor during data collection.

Pressure imaging technology can be used in industrial and engineering environments for product design and verification, process control, or quality assurance.

This paper will be useful to the engineer or business manager interested in applying sensor technology to solve engineering or design problems.

Differential pressure is an important technological parameter, one urgent task of which is control and measurement. To date, the lion’s share of research in this area has focused on the development and improvement of differential pressure sensors. The purpose of this paper is to develop a smart differential pressure sensor with improved operational and metrological characteristics.

The operating principle of the developed pressure sensor is based on the capacitive measurement principle. The measuring unit of the developed pressure sensor is based on a differential capacitive sensitive element. Programmable system-on-chip (PSoC) technology has been used to develop the electronics unit.

The use of a differential capacitive sensitive element allows the unit to compensate for the influence of interference (for example, temperature) on the measurement result. With the use of PSoC technology, it is also possible to increase the noise immunity of the developed smart differential pressure sensor and provide an unparalleled combination of flexibility and integration of analog and digital functionality.

The use of PSoC technology in the developed smart differential pressure sensor has many indisputable advantages, as the size of the entire circuit can be minimized. As a result, the circuit has improved noise immunity. Accordingly, the procedure for debugging and changing the software of the electronics unit is simplified. These features make development and manufacturing cost effective.

The purpose of this paper is to develop a digital hydrostatic pressure sensor with the required metrological and operational characteristics. The developed sensor is designed to control hydrostatic pressure in wells during various geophysical works and studies.

To obtain the required metrological and operational characteristics of the sensor, a method was developed and applied to reduce the measurement error based on the calibration algorithm and the sensor model.

By using the developed calibration algorithm and the mathematical model of the sensor, it was possible to compensate for the measurement errors of the hydrostatic pressure sensor.

In the course of this research, tests of the developed sensor were carried and the maximum/minimum of measurement result errors was determined.

The purpose of this study is to find a new design that can increase the sensitivity of the sensor without sacrificing the linearity. A novel and very efficient method for increasing the sensitivity of MEMS pressure sensor has been proposed for the first time. Rather than perforation, we propose patterned thinning of the diaphragm so that specific regions on it are thinner. This method allows the diaphragm to deflect more in response with regard to the pressure. The best excavation depth has been calculated and a pressure sensor with an optimal pattern for thinned regions has been designed. Compared to the perforated diaphragm with the same pattern, larger output voltage is achieved for the proposed sensor. Unlike the perforations that have to be near the edges of the diaphragm, it is possible for the thin regions to be placed around the center of the diaphragm. This significantly increases the sensitivity of the sensor. In our designation, we have reached a 60 per cent thinning (of the diaphragm area) while perforations larger than 40 per cent degrade the operation of the sensor. The proposed method is applicable to other MEMS sensors and actuators and improves their ultimate performance.

Instead of perforating the diaphragm, we propose a patterned thinning scheme which improves the sensor performance.

By using thinned regions on the diaphragm rather than perforations, the sensitivity of the sensor was improved. The simulation results show that the proposed design provides larger membrane deflections and higher output voltages compared to the pressure sensors with a normal or perforated diaphragm.

The proposed MEMS piezoelectric pressure sensor for the first time takes advantage of thinned diaphragm with optimum pattern of thinned regions, larger outputs and larger sensitivity compared with the simple or perforated diaphragm pressure sensors.

This article gives an overview on the currently available techniques for the measurement of interface pressure or force between (soft) objects. These techniques make use of single sensor elements as well as integrated arrays of sensors to obtain pressure maps. Most of these devices originate from biomedical applications such as the evaluation of wheelchairs and the prevention of pressure ulcers in hospital beds. Today, these technologies are used in a wide range of applications such as computer peripherals, robotics, automotive systems and consumer electronics. These typical applications are considered in the first section. Next, the sensor technologies (and their suppliers) are briefly described and compared. The list of suppliers and technologies is intended as an overview and may not be complete. Finally, new developments in this field are discussed.

This paper aims to describe the fabrication and characterization of current mirror-integrated microelectromechanical systems (MEMS)-based pressure sensor.

The integrated pressure-sensing structure consists of three identical 100-µm long and 500-µm wide n-channel MOSFETs connected in a resistive loaded current mirror configuration. The input transistor of the mirror acts as a constant current source MOSFET and the output transistors are the stress sensing MOSFETs embedded near the fixed edge and at the center of a square silicon diaphragm to sense tensile and compressive stresses, respectively, developed under applied pressure. The current mirror circuit was fabricated using standard polysilicon gate complementary metal oxide semiconductor (CMOS) technology on the front side of the silicon wafer and the flexible pressure sensing square silicon diaphragm, with a length of 1,050 µm and width of 88 µm, was formed by bulk micromachining process using tetramethylammonium hydroxide solution on the backside of the wafer. The pressure is monitored by the acquisition of drain voltages of the pressure sensing MOSFETs placed near the fixed edge and at the center of the diaphragm.

The current mirror-integrated pressure sensor was successfully fabricated and tested using in-house developed pressure measurement system. The pressure sensitivity of the tested sensor was found to be approximately 0.3 mV/psi (or 44.6 mV/MPa) for pressure range of 0 to 100 psi. In addition, the pressure sensor was also simulated using Intellisuite MEMS Software and simulated pressure sensitivity of the sensor was found to be approximately 53.6 mV/MPa. The simulated and measured pressure sensitivities of the pressure sensor are in close agreement.

The work reported in this paper validates the use of MOSFETs connected in current mirror configuration for the measurement of tensile and compressive stresses developed in a silicon diaphragm under applied pressure. This current mirror readout circuitry integrated with MEMS pressure-sensing structure is new and fully compatible to standard CMOS processes and has a promising application in the development CMOS-MEMS-integrated smart sensors.

The purpose of this paper is to use finite element method for optimizing the membrane type double cavity vacuum sealed structure for the best achievable sensitivity in a piezoresistive absolute pressure sensor and its validation using a standard complementary metal oxide semiconductor (CMOS) process.

A double cavity vacuum sealed piezoresistive absolute pressure sensor has been simulated and optimized for its performance and an analytical model describing the behaviour of the sensor has been described. The 1×1 mm sensor chip has two membrane type 100×30×1.7 μm diaphragms consisting of composite layers of plasma enhanced chemical vapour deposition (PECVD) of silicon nitride (Si₃N₄) and silicon dioxide (SiO₂) each hanging over 21 μm deep rectangular cavity. Potassium hydroxide (KOH) based anisotropic etching of single crystal silicon using front side lateral etching technology is used for the fabrication of the sensor. The electrical readout circuitry uses 318 Ω boron diffused low pressure vapour chemical vapour deposition (LPCVD) of polysilicon resistors arranged in the Wheatstone half bridge configuration. The sensing structure is simulated and optimized using COMSOL Multiphysics.

Front-side lateral etching technology has been successfully used for the fabrication of double cavity absolute pressure sensor. A good agreement with the fabricated device for the chosen location of the piezoresistors through simulation has been predicted. The measured pressure sensitivity of two tested pressure sensors is 12.63 and 12.46 mV/MPa, and simulated pressure sensitivity is found to be 12.9 mV/MPa for pressure range of 0 to 0.5 MPa. The location of the piezoresistor has also been optimized using the simulation tools for enhancing the sensor sensitivity to 62.14 mV/MPa. The pressure sensitivity is further enhanced to 92 mV/MPa by increasing the width of the diaphragm to 35 μm.

The simulated and measured pressure sensitivities of the double cavity pressure sensor are in close agreement. Sevenfold enhancement in the pressure sensitivity of the optimized sensing structure has been observed. The proposed front-side lateral etching technology can be adopted for making membrane type diaphragms hanging over vacuum sealed micro-cavities for high sensitivity pressure sensing applications.

The pressure sensors can convert external pressure or mechanical deformation into electrical power and signal, which cannot only detect pressure or strain changes but also harvest energy as a self-powered sensor. This study aims to develop a self-powered flexible pressure sensor based on regular nanopatterned polymer films.

In this paper, the self-powered flexible pressure sensor is mainly composed of two nanopatterned polymer films and one conductive electrode layer between them, which is a sandwich structure. The regular nanostructures increase the film roughness and contact area to enhance the friction effect. To enhance the performance of the pressure sensor, different nanostructures on soft polymer sensitive layers are fabricated using UV nanoimprint lithography to generate more triboelectric charges.

Finally, the self-powered flexible pressure sensor is prepared, which consists of sub-200 nm resolution regular nanostructures on the surface of the elastic layer and an indium tin oxide electrode thin film. By converting the friction mechanical energy into electrical power, a maximum power of 423.8 mW/m2 and the sensitivity of 0.8 V/kPa at a frequency of 5 Hz are obtained, which proves the excellent sensing performance of the sensor.

The acquired electrical power and pressure signal by the sensor would be processed in the signal process circuit, which is capable of immediately and sustainably driving the highly integrated self-powered sensor system. Results of the experiments show that this new pressure sensor is a potential method for personal pressure monitoring, featured as being wearable, cost-effective, non-invasive and user-friendly.