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Surface acoustic wave (SAW) sensors have attracted great attention worldwide for a variety of applications in measuring physical, chemical and biological parameters. However, stability has been one of the key issues which have limited their effective commercial applications. To fully understand this challenge of operation stability, this paper aims to systematically review mechanisms, stability issues and future challenges of SAW sensors for various applications.

This review paper starts with different types of SAWs, advantages and disadvantages of different types of SAW sensors and then the stability issues of SAW sensors. Subsequently, recent efforts made by researchers for improving working stability of SAW sensors are reviewed. Finally, it discusses the existing challenges and future prospects of SAW sensors in the rapidly growing Internet of Things-enabled application market.

A large number of scientific articles related to SAW technologies were found, and a number of opportunities for future researchers were identified. Over the past 20 years, SAW-related research has gained a growing interest of researchers. SAW sensors have attracted more and more researchers worldwide over the years, but the research topics of SAW sensor stability only own an extremely poor percentage in the total researc topics of SAWs or SAW sensors.

Although SAW sensors have been attracting researchers worldwide for decades, researchers mainly focused on the new materials and design strategies for SAW sensors to achieve good sensitivity and selectivity, and little work can be found on the stability issues of SAW sensors, which are so important for SAW sensor industries and one of the key factors to be mature products. Therefore, this paper systematically reviewed the SAW sensors from their fundamental mechanisms to stability issues and indicated their future challenges for various applications.

The purpose of this paper is to enhance the efficiency of the LED by introducing three-step magnesium (Mg) doping profile. Attention was paid to the effects of the Mg doping concentration of the first p-GaN layer (i.e. layer close to the active region). Attention was paid to the effects of the Mg doping concentration of the first p-GaN layer (i.e. layer close to the active region).

Indium gallium nitride (InGaN)–based light-emitting diode (LED) was grown on a 4-inch c-plane patterned sapphire substrate using metal organic chemical vapor deposition. The Cp₂Mg flow rates for the second and third p-GaN layers were set at 50 sccm and 325 sccm, respectively. For the first p-GaN layer, the Cp₂Mg flow rate varied from 150 sccm to 300 sccm to achieve different Mg dopant concentrations.

The full width at half maximum (FWHM) for the GaN (102) plane increases with increasing Cp₂Mg flow rate. FWHM for the sample with 150, 250 and 300 sccm Cp₂Mg flow rates was 233 arcsec, 236 arcsec and 245 arcsec, respectively. This result indicates that the edge and mixed dislocations in the p-GaN layer were increased with increasing Cp₂Mg flow rate. Atomic force microscopy (AFM) results reveal that the sample grown with 300 sccm exhibits the highest surface roughness, followed by 150 sccm and 250 sccm. The surface roughness of these samples is 2.40 nm, 2.12 nm and 2.08 nm, respectively. Simultaneously, the photoluminescence (PL) spectrum of the 250 sccm sample shows the highest band edge intensity over the yellow band ratio compared to that of other samples. The light output power measurements found that the sample with 250 sccm exhibits high output power because of sufficient hole injection toward the active region.

Through this study, the three steps of the Mg profile on the p-GaN layer were proposed to show high-efficiency InGaN-based LED. The optimal Mg concentration was studied on the first p-GaN layer (i.e. layer close to active region) to improve the LED performance by varying the Cp₂Mg flow rate. This finding was in line with the result of PL and AFM results when the samples with 250 sccm have the highest Mg acceptor and good surface quality of the p-GaN layer. It can be deduced that the first p-GaN layer doping has a significant effect on the crystalline quality, surface roughness and light emission properties of the LED epi structure.

The purpose of this research is to efficiently separate incident terahertz (THz) waves into distinct transmission and reflection channels by minimizing the absorption ratio. So, the optical systems operating within the THz frequency range can developed. To achieve a multi-band response, four different periodic arrays of graphene patterns are used. These arrays are strategically stacked on both sides of three SU-8 photoresists, serving as dielectric materials. Consequently, each layer exhibits a unique influence on the device's response, and by applying four external bias voltages, the behavior of the device can be precisely controlled and adjusted.

A novel optoelectronic device operating in the THz frequency range is introduced, using periodic arrays of graphene patterns and SU-8 photoresist dielectrics. The design of this device is based on meta-surface principles, using both the equivalent circuit model (ECM) and transmission line concept. The output of the device is a THz coupler implemented by analyzing the reflection and transmission channels. The structure is characterized using the ECM and validated through comprehensive full-wave simulations. By representing the electromagnetic phenomenon with passive circuit elements, enabling the calculation of absorption, reflection and transmission through the application of the theory of maximum power transfer.

Based on simulation results and theoretical analysis, the proposed device exhibits sensitivity to gate biasing, enabling efficient reflection and transmission of THz waves. The device achieves reflection and transmission peaks exceeding across the five distinct THz bands 90%, and its behavior can be tuned by external gate biasing. Moreover, the device's sensitivity to variations in geometrical parameters and chemical potentials demonstrates its reliable performance. With its outstanding performance, this high-performance meta-surface emerges as an ideal candidate for fundamental building blocks in larger optical systems, including sensors and detectors, operating within the THz frequency band.

The proposed device covers a significant portion of the THz gap through the provision of five adjustable peaks for reflection and transmission channels. Additionally, the ECM and impedance matching concept offers a simplified and time-efficient approach to designing the meta-surface. Leveraging this approach, the proposed device is effectively represented using passive circuit elements such as inductors, capacitors and resistors, while its performance is validated through the utilization of the finite element method (FEM) as a full-wave simulation tool. This combination of circuit modeling and FEM simulation contributes to the robustness and accuracy of the device's performance evaluation.

The purpose of this work is to study the capability of heuristic algorithms like genetic algorithm to estimate the electron transport parameters of the Gallium Arsenide (GaAs). Also, the paper provides a simple but complete electron mobility model for the GaAs based on the genetic algorithm that can be suitable for use in simulation, optimization and design of GaAs‐based electronic and optoelectronic devices.

The genetic algorithm as a powerful heuristic optimization technique is used to approximate the electron transport parameters during the model development.

The capability of the model to approximate the electron transport properties of Gallium Arsenide is tested using experimental and Monte Carlo data. Results show that the genetic algorithm based model can provide a reliable estimate of the electron mobility in Gallium Arsenide for a wide range of temperatures, concentrations and electric fields. Based on the obtained results, this paper shows that the genetic algorithm can be a useful tool for the estimation of the transport parameters of semiconductors.

For the first time, the genetic algorithm is used to calculate the electron transport parameters in Gallium Arsenide. A complete electron mobility model for a wide range of temperatures, doping concentrations, compensation ratios and electric fields is developed.

This study aims to fabricate multiwalled carbon nanotubes (MWCNTs)-mediated polyvinyl alcohol (PVA) composite films using the solution casting approach.

The prepared films were evaluated for diverse structural, surface, optical and electrical attributes using advanced analytical techniques, i.e. electron microscopy for surface morphology, Fourier transform infrared spectroscopy for tracing chemical functionalities, x-ray diffraction (XRD) for crystal patterns, water contact angle (WCA) analysis for surface wettability and UV visible spectroscopy for optical absorption parameters. The specimens were also investigated for certain rheological, mechanical and electrical properties, where applicable.

The surface morphology results expressed a better dispersion of MWCNTs in the resultant PVA-based nanocomposite film. The XRD analysis exhibited that the nanocomposite film was crystalline. The surface wettability analysis indicated that with the inclusion of MWCNTs, the WCA of the resultant nanocomposite film improved to 89.4° from 44° with the pristine PVA film. The MWCNTs (1.00%, w/w) incorporated PVA-based film exhibited a tensile strength of 54.0 MPa as compared to that of native PVA as 25.3 MPa film. There observed a decreased bandgap (from 5.25 to 5.14 eV) on incorporating the MWCNTs in the PVA-based nanocomposite film.

The MWCNTs’ inclusion in the PVA matrix could enhance the AC conductivity of the resultant nanocomposite film. The prepared nanocomposite film might be useful in designing certain optoelectronic devices.

The results demonstrated the successful MWCNTs mediation in the PVA-based composite films expressed good intercalation of the precursors; this resulted in decreased bandgap, usually, desirable for optoelectronic applications.

The purpose of this paper is to investigate the optoelectronic properties of the multichannel ZnO UV photodetectors.

ZnO nanowires were assembled by dielectrophoresis for the UV photodetectors. Different ZnO channels were adjusted by different alternating current voltages and investigated for UV optoelectronic properties.

The number of the ZnO channels increases with the enhancing alternating current voltage. Optimum performance of the UV photodetectors is obtained with more channels.

Dielectrophoresis is a promising method for controllable assembly of multichannel ZnO photodetectors. ZnO photodetectors with more channels demonstrate a good response to 380-nm UV light, which shows great potential application in UV photodetector.

Analyses some of the main ways in which microporous membranes can play a role in the efficient functioning of sensors. These devices are used to detect a property of, or component in, a fluid in contact with the sensor. As used in this article, the term “sensor” is intended to cover the broadest range of optical, optoelectronic or electronic devices used to detect a component of a fluid in contact with the sensor as part of a detection system.

Porous silicon (PS) was successfully fabricated using an alternating current photo-assisted electrochemical etching (ACPEC) technique. This study aims to compare the effect of different crystal orientation of Si n(100) and n(111) on the structural and optical characteristics of the PS.

PS was fabricated using ACPEC etching with a current density of J = 10 mA/cm² and etching time of 30 min. The PS samples denoted by PS₁₀₀ and PS₁₁₁ were etched using HF-based solution under the illumination of an incandescent white light.

FESEM images showed that the porous structure of PS₁₀₀ was a uniform circular shape with higher density and porosity than PS₁₁₁. In addition, the AFM indicated that the surface roughness of porous n(100) was less than porous n(111). Raman spectra of the PS samples showed a stronger peak with FWHM of 4.211 cm⁻¹ and redshift of 1.093 cm⁻¹. High resolution X-ray diffraction revealed cubic Si phases in the PS samples with tensile strain for porous n(100) and compressive strain for porous n(111). Photoluminescence observation of porous n(100) and porous n(111) displayed significant visible emissions at 651.97 nm (Eg = 190eV) and 640.89 nm (Eg = 1.93 eV) which was because of the nano-structure size of silicon through the quantum confinement effect. The size of Si nanostructures was approximately 8 nm from a quantized state effective mass theory.

The work presented crystal orientation dependence of Si n(100) and n(111) for the formation of uniform and denser PS using new ACPEC technique for potential visible optoelectronic application. The ACPEC technique has effectively formed good structural and optical characteristics of PS.

The purpose of this paper is to study the spectral sensitivity characteristics of new pyroelectric sensor based on tetraaminodiphenyl film within the wavelength range of 0.4-10 µm and 300-3,000 µm.

Mylar film with the thickness of about 70 µm was used as the input window. The MDR-41 monochromator-based spectrometric complex and the quasi-optical spectrometer with the set of backward-wave oscillators were used for measurements of the pyrodetector spectral characteristics within the 0.4-10 µm and 300-3,000 µm ranges, respectively.

Mylar was found to have absorption lines within the range of 0.4-10 µm, which must be taken into account when broadband detectors developing. The noise equivalent power in the visible and infrared ranges was less than 6 × 10^–10 W/Hz^1/2, which is about five times lower than for analogue ones. In the sub-THz range, the pyrodetector sensitivity is 2-8 times higher than the Golay cell. The sensitivity of such pyrodetector weakly depends on the wavelength in the total measured range.

The pyroelectric sensor has good prospects for use in super wide spectral range, from ultraviolet to millimeter radiation, in spectrometers for scientific research, in industry for the operational control of THz radiation sources, as well as in security THz-systems.

The spectral sensitivity characteristics of the pyroelectric photosensor based on TADPh in the visible, infrared and terahertz ranges were measured. The prospects for the use of such sensors were determined.