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Discusses the 27 papers in ISEF 1999 Proceedings on the subject of electromagnetisms. States the groups of papers cover such subjects within the discipline as: induction machines; reluctance motors; PM motors; transformers and reactors; and special problems and applications. Debates all of these in great detail and itemizes each with greater in‐depth discussion of the various technical applications and areas. Concludes that the recommendations made should be adhered to.

To solve the problem of low sensitivity of traditional capacitive proximity sensor, this paper aims to propose a novel capacitive sensor for detection of an approaching conductor.

Five capacitive proximity sensors with different structures are designed and the performance is compared with the traditional capacitive sensor. The impacts of geometrical parameters on the performance of the proposed capacitive sensor are studied. Furthermore, the sensitivity of the proposed capacitive sensor to an approaching conductor with different sizes is discussed. Also, how the designed capacitive sensor is sensitive to the lateral placement of the approaching object is analyzed.

Several capacitive proximity sensor structures have been designed and analyzed. It is found that the capacitive sensor with the top small ring-bottom large ring structure shows stronger electric field distribution around the top electrode and higher sensitivity to the approaching conductor than other sensors. Through further analysis of the proposed sensor, the results demonstrate that proposed capacitive sensor is effective for proximity object detection.

This paper proposes a novel capacitive proximity sensor with top small ring-bottom large ring structure. Compared with the traditional capacitive sensor, the proposed capacitive sensor is more sensitive to the approaching object. This would be helpful for the accurate detection of the approaching object. Also, the top and bottom electrodes are much smaller.

The purpose of this paper is to develop analytical model for gate tunneling current for an ultra‐thin gate oxide n‐channel MOSFET with inevitable nano scale effects (NSE).

A computationally efficient model for gate tunneling current for an ultra‐thin gate oxide n‐channel MOSFET in nano scale is presented. The model predictions are compared with the two‐dimensional Sentaurus device simulation.

Good agreement between the model and experimental data was obtained. The model also shows good agreement when compared with Sentaurus simulation and available model. It is observed that neglecting NSE may lead to large error in the calculated gate tunneling current. The findings provide a guideline to the severity of NSE from the point of view of standby power consumption. It is found that temperature and substrate bias have almost negligible effect on gate tunneling current. The gate tunneling current variation with gate bias, gate oxide thickness and source/drain overlap region have also been assessed.

The present work is concentrated only on the gate leakage current and is useful for gate leakage analysis of the circuits.

The model so developed is conceptually simple, numerically efficient and can be used for circuit simulator.

NSE are considered while modeling the gate tunneling current through nano scale n‐channel MOSFET.

The purpose of this paper is to present the sensing mechanism, design issues, performance evaluation and applications for planar capacitive sensors. In the context of characterisation and imaging of a dielectric material under test (MUT), a systematic study of sensor modelling, features and design issues is needed. In addition, the influencing factors on sensitivity distribution, and the effect of conductivity on sensor performance need to be further studied for planar capacitive sensors.

While analytical methods can provide accurate solutions to sensors of simple geometries, numerical modelling is preferred to obtain sensor response to different design parameters and properties of MUT, and to derive the sensitivity distributions of various electrode designs. Several important parameters have been used to evaluate the response of the sensors in different sensing modes. The designs of different planar capacitive sensor arrays are presented and experimentally evaluated.

The response features and design guidelines for planar capacitive sensors in different sensing modes have been summarised, showing that the sensor in the transmission mode or the single‐electrode mode is suitable for material characterisation and imaging, while the sensor in the shunt mode is suitable for proximity/displacement measurement. The sensitivity distribution of the sensor depends largely on the geometry of the electrodes. Conductivity causes positive changes for the sensor in the transmission and single‐electrode mode, but negative changes for the sensor in the shunt mode. Experimental results confirm that sensing depths of the sensor arrays and the influence of buried conductor on capacitance measurements are in agreement with simulations.

Experimental verification is needed when a sensor is designed.

This paper provides a comprehensive study for planar capacitive sensors in terms of sensor design, evaluation and applications.

Electrostatic microelectromechanical systems are characterized by the pull‐in instability, associated to a pull‐in voltage. A good design requires an accurate model of this pull‐in phenomenon. The purpose of this paper is to present two approaches to building finite element method (FEM) based models.

Closed form expressions for the computation of the pull‐in voltage, can provide fast results within reliable accuracy, except when treating cases of extreme fringing fields. FEM‐based models come handy when high accuracy is needed. In the first model presented in this paper, the FEM is used to solve the electrostatic problem, while the mechanical problem is solved using a simplified Euler‐Bernoulli beam equation. The second model is a pure FEM model coupling the electrostatic and mechanical problems iteratively through the electrical force. Results for both scalar and vector potential formulations for the FEM models are presented.

In this paper a comparative study of simple pull‐in structures is presented, between analytical and 3D FEM‐based models. A comparison with analytical models and experimental results is also realized.

The coupling between the electrostatic and mechanical problem in the presented approaches, is iterative. Therefore, to improve the accuracy of the presented model, a strong coupling is needed.

In the presented FEM‐analytical model, the electrostatic problem is solved in both, scalar and vector electric potential formulations. This allows defining an upper and a lower limit for the electrostatic force and consequently for the pull‐in voltage.

With the development of artificial intelligence, proximity sensors show their great potential in intelligent perception. This paper aims to propose a new planar capacitive sensor for the proximity sensing of a conductor.

Different from traditional structures, the proposed sensor is characterized by sawtooth-structured electrodes. A series of numerical simulations have been carried out to study the impact of different geometrical parameters such as the width of the main trunk, the width of the sawtooth and the number of sawtooths. In addition, the impact of the lateral offset of the approaching graphite block is investigated.

It is found that sensitivity is improved with the increase of the main trunk with, sawtooth width and sawtooth number while a larger lateral offset leads to a decrease in sensitivity. The performance of the proposed planar capacitive proximity sensor is also compared with two conventional planar capacitive sensors. The results show that the proposed planar capacitive sensor is obviously more sensitive than the two conventional planar capacitive sensors.

In this paper, a new planar capacitive sensor is proposed for the proximity sensing of a conductor. The results show that the capacitive sensor with the novel structure is obviously more sensitive than the traditional structures in the detection of the proximity conductor.

The purpose of this paper is to present a dual-mode proximity sensor composed of inductive and capacitive sensing modes, which can help the robot distinguish different objects and obtain distance information at the same time. A systematic study of sensor response to various objects and the function of cooperation sensing is needed. Furthermore, the application in the field of robotic area needs to be discussed.

Numerical modeling of each sensing modes and simulations based on finite element analysis method has been carried out to verify the designed dual-mode sensor. A number of objects composed of different materials are used to research the cooperation perception and proximity sensing functions. In addition, the proposed sensor is used on the palm of a mechanical hand as application experiment.

The characteristics of the sensor are summarized as follows: the sensing range of inductive mode is 0-5.6 mm for detecting a copper block and the perceive range of capacitive mode is 0-5.1 mm for detecting a plastic block. The collaborative perceive tests validated that the non-ferromagnetism metals can be distinguished by inductive mode. Correspondingly, ferromagnetism metals and dielectric objects are differentiated by capacitive mode. Application experiments results reveal that both plastic bottle and steel bottle could be detected and differentiated. The experimental results are in agreement with those of simulations.

This paper provides a study of dual-mode proximity sensor in terms of design, experiments and application.

The purpose of this paper is to determine a priori the optimal needle placement so to achieve an as accurate as possible magnetic property identification of an electromagnetic device. Moreover, the effect of the uncertainties in the geometrical parameter values onto the optimal sensor position is studied.

The optimal needle placement is determined using the stochastic Cramér‐Rao lower bound method. The results obtained using the stochastic method are compared with a first order sensitivity analysis. The inverse problem is solved starting from real local magnetic induction measurements coupled with a 3D finite element model of an electromagnetic device (EI core inductor).

The optimal experimental design for the identification of the magnetic properties of an electromagnetic device is achieved. The uncertainties in the geometrical model parameters have a high effect on the inverse problem recovered solution.

The solution of the inverse problem is more accurate because the measurements are carried out at the optimal positions, in which the effects of the uncertainties in the geometrical model parameters are limited.

The purpose of this paper is to explore concepts and manufacturing issues for the emerging piezo on silicon technology being used in ultra‐sound devices. Development of 3D silicon‐on‐silicon structures is now under way. Additional functionality can be achieved using piezoelectric‐on‐silicon structures and work in this area has started. A commercialisation road map is required, specifying development of the design and fabrication techniques from research to high volume and lower volume high‐value manufacture of niche products.

This conceptual paper outlines processes needed, along with their possible sources with illustrations of present capabilities. Included are surface finishing techniques such as grinding, bonding technology for dissimilar materials, and through‐wafer‐via fabrication. Control of acoustic propagation, thermal expansion and electric field fringing effects will be considered.

Areas that require research and development are identified with possible starting points using techniques already used in other applications. Strong emphasis on empirical research highlights possible issues with examples including surface finishing and wafer dicing to show current methods.

Archetypal pixellated piezoelectric‐on‐silicon structures highlight critical points. In the authors' work, such pixellated structures occur in 1‐3 connectivity piezoelectric ceramic‐polymer composites with unit cell length scales from several millimetres, manufactured with mechanical dicing, to less than 50 μm, manufactured with micro‐moulding.

A forward looking approach of “thinking freely” is taken, this opens up potential manufacturing routes and ideas precluded from an iterative approach.

The conclusion suggests the criteria for a “design for” approach linked to either bottom up or top down assembly techniques for the integration of conventional and unusual piezoelectric materials with silicon in 3D structures.

The purpose of this paper is to present an improved model based on center potential instead of surface potential which is physically more relevant and accurate. Also, additional analytic insights have been provided to make the model independent and robust so that it can be extended to a full range compact model.

The design methodology used is center potential based analytical modeling using Psuedo-2D Poisson equation, with ingeniously developed boundary conditions, which help achieve reasonably accurate results. Also, the depletion width calculation has been suitably remodeled, to account for proper physical insights and accuracy.

The proposed model has considerable accuracy and is able to correctly predict most of the physical phenomena occurring inside the broken gate Tunnel FET structure. Also, a good match has been observed between the modeled data and the simulation results. I_on/I_ambipolar ratio of 10^(−8) has been achieved which is quintessential for low power SOCs.

The modeling approach used is different from the previously used techniques and uses indigenous boundary conditions. Also, the current model developed has been significantly altered, using very simple but intuitive technique instead of complex mathematical approach.