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To fabricate submicrometer thin membrane of silicon nitride and silicon dioxide over an anisotropically etched cavity in (100) silicon.

PECVD of silicon dioxide and Silcion nitride layers of compatible thicknesses followed by thermal annealing in nitrogen ambients at 1,000°C for 30 min, leads to stable membrane formation. Anisotropic etching of (100) silicon below the membrane through channels on the sides has been used with controlled cavity dimensions.

Lateral front side etching through channels slows down etching rate drastically. The etching mechanism has been discussed with experimental details.

Vacuum sealed cavity membranes can be realised for micro sensor applications.

The process is new and feasible for micro sensor technologies.

Resonant sensing is a high performance technique suitable for a wide range of applications. Defines the principles of resonant sensing and describes the various fabrication techniques. Details resonant sensor performance and finally gives examples of resonant sensors in use today.

The purpose of this study is to develop a piezoresistive absolute micro-pressure sensor for altimetry. For this application, both high sensitivity and high overload resistance are required. To develop a piezoresistive absolute micro-pressure sensor for altimetry, both high sensitivity and high-overload resistance are required. The structure design and optimization are critical for achieving the purpose. Besides, the study of dynamic performances is important for providing a solution to improve the accuracy under vibration environments.

An improved structure is studied through incorporating sensitive beams into the twin-island-diaphragm structure. Equations about surface stress and deflection of the sensor are established by multivariate fittings based on the ANSYS simulation results. Structure dimensions are determined by MATLAB optimization. The silicon bulk micromachining technology is utilized to fabricate the sensor prototype. The performances under both static and dynamic conditions are tested.

Compared with flat diaphragm and twin-island-diaphragm structures, the sensor features a relatively high sensitivity with the capacity of suffering atmosphere due to the introduction of sensitive beams and the optimization method used.

An improved sensor prototype is raised and optimized for achieving the high sensitivity and the capacity of suffering atmosphere simultaneously. A general optimization method is proposed based on the multivariate fitting results. To simplify the calculation, a method to linearize the nonlinear fitting and optimization problems is presented. Moreover, a differential readout scheme attempting to decrease the dynamic interference is designed.

The purpose of this paper is to help reduce power consumption by using platinum‐based microhotplate with different dielectric membranes SiO2 and Si3N4 for gas sensing applications, and to develop platinum lift‐off process using DC sputtering method for fabrication of platinum resistor.

Semiconductor gas sensors normally require high power consumption because of their elevated operating temperature 300‐600°C. Considering the thermal resistant and sensitive characteristics of metal platinum as well as heat and electricity insulating characteristics of SiO2, Si3N4 and combination of both, a kind of the Si‐substrate microhotplate was designed and simulated using ANSYS 10.0 tool. Thermal oxidation of Si wafer was carried out to get a 1.0 μm thick SiO2 layer. Pt deposition on oxidized silicon substrate by lift‐off was carried out using DC sputtering technique.

The platinum‐based microhotplate requires 31.3‐70.5 mW power to create the temperature 348‐752°C for gas sensing applications. The SiO2 membrane can operate the gas sensitive film at higher temperature than the Si3N4 and combination of both the membranes at same power consumption. The paper also presents the FEM simulation of different heating elements like nichrome and tantalum and its comparison to platinum for microhotplate applications.

Both the simulation and experimental work provides the low cost, high yield and repeatability in realization of microhotplate. The design and simulation work provides the better selection of heating elements and dielectric membranes. The developed experimental process provides the easy fabrication of platinum resistors using DC sputtering technique.

The purpose of this paper is to present a selective wet‐etching method of boron doped low‐pressure chemical vapour deposition (LPCVD) polysilicon film for the realization of piezoresistors over the bulk micromachined diaphragm of (100) silicon with improved yield and uniformity.

The method introduces discretization of the LPCVD polysilicon film using prior etching for the grid thus dividing each chip on the entire wafer. The selective etching of polysilicon for realizing of piezoresistors is limited to each chip area with individual boundaries.

The method provides a uniform etching on the entire silicon wafer irrespective of its size and leads to economize the fabrication process in a batch production environment with improved yield.

The method introduces one extra process step of photolithography and subsequent etching for discretizing the polysilicon film.

The method is useful to enhance yield while defining metal lines for contact purposes on fabricated electronic structures using microelectronics. Stress developed in LPCVD polysilicon can be removed using proposed approach of discretization of polysilicon film.

The work is an outcome of regular fabrication work using conventional approaches in an R&D environment. The proposed method replaces the costly reactive ion etching techniques with stable reproducibility and ease in its implementation.

This paper aims to describe the fabrication and characterization of current mirror-integrated microelectromechanical systems (MEMS)-based pressure sensor.

The integrated pressure-sensing structure consists of three identical 100-µm long and 500-µm wide n-channel MOSFETs connected in a resistive loaded current mirror configuration. The input transistor of the mirror acts as a constant current source MOSFET and the output transistors are the stress sensing MOSFETs embedded near the fixed edge and at the center of a square silicon diaphragm to sense tensile and compressive stresses, respectively, developed under applied pressure. The current mirror circuit was fabricated using standard polysilicon gate complementary metal oxide semiconductor (CMOS) technology on the front side of the silicon wafer and the flexible pressure sensing square silicon diaphragm, with a length of 1,050 µm and width of 88 µm, was formed by bulk micromachining process using tetramethylammonium hydroxide solution on the backside of the wafer. The pressure is monitored by the acquisition of drain voltages of the pressure sensing MOSFETs placed near the fixed edge and at the center of the diaphragm.

The current mirror-integrated pressure sensor was successfully fabricated and tested using in-house developed pressure measurement system. The pressure sensitivity of the tested sensor was found to be approximately 0.3 mV/psi (or 44.6 mV/MPa) for pressure range of 0 to 100 psi. In addition, the pressure sensor was also simulated using Intellisuite MEMS Software and simulated pressure sensitivity of the sensor was found to be approximately 53.6 mV/MPa. The simulated and measured pressure sensitivities of the pressure sensor are in close agreement.

The work reported in this paper validates the use of MOSFETs connected in current mirror configuration for the measurement of tensile and compressive stresses developed in a silicon diaphragm under applied pressure. This current mirror readout circuitry integrated with MEMS pressure-sensing structure is new and fully compatible to standard CMOS processes and has a promising application in the development CMOS-MEMS-integrated smart sensors.

One of the key components of the micro-sensors is MEMS micro-hotplate. The purpose of this paper is to introduce a platinum micro-hotplate with the proper geometry using the analytical model based on the heat transfer analysis to improve both heating efficiency and time constant.

This analytical model exhibits that suitable design for the micro-hotplate can be obtained by the appropriate selection of square heater (LH) and tether width (WTe). Based on this model and requirements of routine sample loading, the size of LH and WTe are chosen 200 and 15 μm, respectively. In addition, a simple micro-fabrication process is adopted to form the suspended micro-heater using bulk micromachining technology.

The experimental results show that the heating efficiency and heating and cooling time constants are 21.27 K/mW and 2.5 ms and 2.1 ms, respectively, for the temperature variation from 300 to 400 K in the fabricated micro-hotplates which are in closed agreement with the results obtained from the analytical model with errors within 5 per cent.

Our design based on the analytical model achieves a combination of fast time constant and high heating efficiency that are comparable or superior to the previously published platinum micro-hotplate.

A MEMS process is described to control diaphragm thickness with an integrated provision for back to front alignment in the fabrication of a polysilicon piezoresistive pressure sensor. The end point detection for the diaphragm etching is suitably incorporated in the process so that it is also used for the back‐to‐front alignment. The proposed process is cost‐effective and suitable for the batch fabrication of the pressure sensor.

The purpose of this paper is to present a novel approach for fabricating electronic nose (e‐nose) systems for adaptation into autonomous wireless sensor nodes. Such systems must fulfill a combination of requirements that currently cannot be met by existing technologies. The paper also contains an overview of the various application domains that are envisaged for such miniaturized electronic nose systems.

The approach makes use of micromechanical systems that are an ideal technology for fabricating miniaturized sensor arrays for low‐power applications. An array of doubly clamped micromechanical beams with integrated piezoelectric transducers is presented.

The presented approach fulfills the requirements of sensitivity, arrayability, integratability and low‐power operation.

Further research is required to integrate the structures with low‐power analog readout circuits and to demonstrate simultaneous measurements from multiple structures.

The presented technology makes use of established micromachining techniques and deploys commercial inkjet printing for functionalization of the individual detection elements. This enhances its potential adaptation by industry.

The innovative concept paves the way for autonomous electronic nose systems.

The purpose of this paper is to provide a technical review of silicon micro‐electromechanical systems (MEMS) technology and its applications.

Following an introduction, the paper describes silicon MEMS fabrication and assembly techniques, considers a selection of commercially important products and their applications and concludes with a brief review of power MEMS research.

Silicon MEMS fabrication technology is derived from techniques used in semiconductor manufacture and has yielded a diverse and ever‐growing range of sensors, actuators and other miniaturised devices that find applications in a multitude of industries.

This paper provides a detailed technical review of MEMS technology and its applications.