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The purpose of this paper is to characterize electrical properties of nickel-phosphorus (Ni-P) thin-film resistors made on FR-4 laminate in a wide range of temperature (from −180 to 20°C).

The study was performed using resistors made of Ni-P foil with two different thicknesses (0.1 or 0.05 μm) and sheet resistances (100 or 250 Ω/sq), respectively. The resistance rectangular resistors had length and width from the range between 0.59 and 5.91 mm. The resistance versus temperature characteristics and their distribution as well as resistors ' durability to low-temperature thermal shocks were investigated.

The results showed almost linear temperature dependence of resistance with a negative temperature coefficient of resistance of about −95 ppm/°C for 250 Ω/sq layer and −55 ppm/°C for 100 Ω/sq layer. A very small dimensional effect was observed for sheet resistance as well as for R(T) characteristic. Thin-film resistors are also characterized by very high durability to low-temperature thermal shocks.

The results presented in this paper can be very useful for low-temperature applications of thin-film resistors made on printed circuit boards. They suggest possibility of wide applications of these components in a wide temperature range.

The paper aims to present a research on the impact of the stabilization process of a thin metallic layer (Ni-P) produced on a ceramic surface (Al₂O₃) by means of electroless metallization on its electric parameters and structure. On the basis of the research conducted, the existence of a relationship between resistance (R) and the temperature coefficient of resistance (TCR) of the test structure with a Ni-P alloy-based layer and the temperature of stabilization was proposed.

Metallic Ni-P layers were deposited on sensitized and activated substrates. Metallization was conducted in an aqueous solution containing two primary ingredients: sodium hypophosphite and nickel chloride. The concentration of both ingredients was (50-70) g/dm³. The process lasted 60 min, and the metallization bath pH was kept at 2.1-2.2, whereas the temperature was maintained at 363 K. The thermal stabilization process was conducted in different temperatures between 453 and 623 K. After the technological processes, the resistance and TCR of the test structures were measured with a micro ohmmeter. The composition and the morphology of the resistive layer of the structures examined was also determined.

The dependence of the resistance on the temperature of the stabilization process for the temperature range 553 to 623 K was described using mathematical relationships. The TCR of test resistors at the same thermal stabilization temperature range was also described using a mathematical equation. The measurements show that the resistive layer contains 82.01 at.% of nickel (Ni) and 17.99 at.% of phosphorus (P).

The results associate a surface morphology Ni-P alloy with the resistance and TCR according to temperature stabilization. The paper presents mathematical relationships that have not been described in the literature available.

The aim of the present work was the characterization of a group of compounds with the perovskite‐type structure in respect of their applicability as thermistor materials.

Four compositions: La_0.7Sr_0.3Zr_0.5Co_0.2²⁺Co_0.3³⁺O₃, La_0.8Sr_0.2Ti_0.5Co_0.3²⁺Co_0.2³⁺O₃, La_0.4Sr_0.6Ti_0.3Fe_0.7O₃ and CaTi_0.8Co_0.2O₃ were synthesized by solid‐state reaction. Ceramic thermistor materials were sintered in the temperature range 1,300‐1,400°C. The synthesized powders were used for fabrication of thick film pastes and thermistors fired at 1,100‐1,250°C. Resistance‐temperature characteristics of the ceramic samples were studied in the range −55 to 800°C for the ceramic samples and 20‐600°C for thick films. Endurance tests at 300°C for 500 h were performed.

The developed NTC materials exhibited high temperature coefficients of resistivity, dense microstructure and good stability. The most advantageous characteristics have been shown by La_0.7Sr_0.3Zr_0.5Co_0.2²⁺Co_0.3³⁺O₃ and La_0.8Sr_0.2Ti_0.5Co_0.3²⁺Co_0.2³⁺O₃ thermistors. The highest Temperature coefficient of resistances for the ceramics were found in the temperature range from −55 to 180°C (−10.7 to −2.9 per cent/°C) and for the thick films in the temperature range 40‐300°C (−5.6 to −1.5 per cent/°C).

This work has been focused on preliminary choice of compositions appropriate for practical thermistor thick film applications. Elucidation of conduction mechanism of the investigated materials needs further complex studies of conductivity, nonstoichiometry, thermoelectric power, etc. as a function of temperature and oxygen partial pressure.

In this work, an attempt has been made to extend the typical range of NTC compositions and to fulfil the demand for improved stability of bulk and thick film thermistors at elevated temperatures.

The purpose of this work was to characterize NiMn₂O₄ spinel-based thermistor powder, to use it in screen printing technology to fabricate temperature sensors, to study their performance for different sintering temperatures of thermistor layer, with and without insulative cover, as well as to investigate stability of the fabricated thermistors and their applicability in water quality monitoring.

After the characterization of starting NiMn₂O₄ spinel-based thermistor powder, it was converted to thick film paste which was screen printed on alumina substrate. Thermistor layers were sintered at four different sintering temperatures: 980°C, 1050°C, 1150°C and 1290°C. An interdigitated pattern of Ag-Pd conductive layer was used to reduce the resistance. Temperature-resistance characteristics were investigated in air and water, with and without insulative cover atop the thermistor layer. Stability of the fabricated thermistors after aging at 120°C for 300 h was also examined.

Thick film NiMn₂O₄ spinel thermistors, prepared by screen printing and sintering in the temperature range 980°C–1290°C, exhibited good negative temperature coefficient (NTC) characteristics in the temperature range −30°C to 145°C, including high temperature coefficient of resistance, good stability and applicability in water.

This study explores the range of sintering temperature that can be applied for NiMn₂O₄ thermistor thick films without compromising on the temperature sensing performance in air and water, as well as stability of the thermistors after aging at elevated temperatures.

A thick film overcurrent protector with self‐recovery has been developed using carbon black graft polymer. Carbon black graft polymer, henceforth called CG, is a thick film PTC thermistor material in which a polymer forms a three‐dimensional network structure around carbon blacks by graft‐copolymerising vinyl monomers. Since the CG material gives a large and stable positive temperature coefficient of resistance depending on the copolymer material, due to the difference of thermal expansion coefficient between carbon blacks and polymer, the stable thick film overcurrent protector with self‐recovery can be realised by using the CG material. The overcurrent protector utilises the dynamic current‐time characteristics of the CG element. When a very large current flows through the CG element, the temperature rises by self‐heating, and the resistance of the element increases dramatically; as a result it restrains the current at a lower level. Since this element is not destroyed after excess current flow, it can be used repeatedly, unlike a metal fuse. In this paper, the manufacturing process and thermal and electrical characteristics of the CG overcurrent protector are investigated, including an analysis of these characteristics.

The purpose of this paper is to present the properties of thick-film resistors made of novel pastes prepared from glass and graphite.

Graphite-based resistors were made of thick-film pastes with different graphite-to-glass mass fraction were prepared and examined. Sheet resistance, temperature coefficient of resistance, impact of humidity and short-term overload were investigated. The properties of the layers fired in atmospheres of air at 550°C and nitrogen at 875°C were compared.

Graphite-based resistors with various graphite-to-glass ratios made possible to obtain a wide range of sheet resistance from single O/square to few kO/square. These values were dependent on firing atmosphere, paste composition and the number of screen-printed layers. The samples made of paste with 1:1 graphite-to-glass ratio exhibited the temperature coefficient of resistance of about −1,000 ppm/°C, almost independently on the firing atmosphere and presence of a top coating. The resistors fired in the air after coating with overglaze, exhibited significantly lower sheet resistance, reduced impact of humidity and improved power capabilities.

In this paper, graphite-based resistors for applications in typical high-temperature cermet thick-film circuits were presented, whereas typical graphite-based resistors were fabricated in polymer thick-film technology. Owing to very low cost of the graphite, the material is suitable for low-power passive circuits, where components are not subjected into high temperature, above the typical temperature of operation of standard electronic components.

Describes research into methods for treating solid state gas sensors to create a multisensor system with both multi‐gas analysis and self‐diagnostic capabilities. Outlines the three main categories of solid state gas sensors and then discusses the need for a systematic approach to semiconductor sensor design and the phenomenology of new sensor materials. Concludes that theoretically a self‐diagnostic sensor array device can be conceived for utilisation in gas sensing.

This study aims to present an efficient and reliable graphene nanoplatelets (GNPs)-based temperature sensor.

A high-quality dispersion of GNPs was dropped by casting method on platinum electrodes deposited on a polyethylene terephthalate (PET) substrate. The GNPs were characterized by scanning electron microscope, Raman spectroscopy and X-ray diffraction spectra to ensure its purity and quality. The temperature sensing behavior of the fabricated sensor was examined by subjecting it to different temperatures, range from room temperature (RT) to 150 °C.

Excellent resistance linearity with temperature change was achieved. Temperature coefficient of resistance of the fabricated sensor was calculated as 1.4 × 10^–3°C. The sensor also showed excellent repeatability and stability for the measured temperature range. Good response and recovery times were evaluated at all the measured temperatures. With measuring the sensor response, the ambient temperature can be determined.

The present work presents a new simply and low cost fabricated temperature sensor based on GNPs working at a wide temperature range.

An experimental study of thick film strain sensitive resistors as typically employed in resistive bridge interface circuits has been undertaken. It has been found that the chosen aspect ratio (length to width ratio) of these screen printed and fired thick film resistors has a significant effect on both the temperature coefficient of resistance and the low frequency noise characteristics of the devices. This sensitivity to aspect ratio has been attributed to metal end contact migration in the devices during firing and hence a relationship between the sensitivity and the choice of end contact material and the firing regime employed in device fabrication has also been identified.

The purpose of this paper is to characterize electrical parameters of amorphous Ni‐P resistive layers used for fabrication of precise resistors.

Ni‐P resistive layers were produced by the chemical process in water solution using Ni^2 + and H₂PO₂⁻ ions. The paper presents the results of the studies concerning the influence of bath acidity and conditions of thermal stabilization on the structure and temperature coefficient of resistance of Ni‐P alloy.

The temperature coefficient of resistance of amorphous Ni‐P layers was found to depend significantly on the parameters of chemical metallisation process. It was stated that the changes of through‐casing resistivity versus the acidity of technological solution have roughly parabolic characteristics.

In this paper, it was at first explained how the changes of the structure of Ni‐P resistive layers depend on their temperature coefficient of capacitance.