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The purpose of this paper is to provide an accurate model and method to simulate the transient performances of an insulated gate bipolar transistor (IGBT) in an arbitrary free-carrier injection condition.

A numerical model and method for solving the physics-based model, an ambipolar diffusion equation-based model, of an IGBT is proposed.

The results of the proposed model are very close to the tested ones.

A mathematical model for an IGBT considering all free-carrier injection conditions is introduced, and a numerical solution methodology is proposed.

Modelling of a Twin ridge waveguide optical Amplifier is reported here. In this paper appropriate physical mechanism such as current spreading, carrier diffusion, waveguiding and switching etc. have been take into consideration and the effects on characteristics and performance as a switch were investigated. With this model, physical phenomenon appropriate to the device can be analysed with respect to electrical, optical and geometrical parameters. Mixture of analytical and numerical techniques were employed.

Models of power semiconductor devices for use in circuit simulators need to take account of effects which can be neglected in low power device models; they then become very complex and difficult to parameterise. The power PIN diode model described in this paper demonstrates how the use of empirically derived look‐up tables can simplify the characterisation problem and how non quasi‐static effects can be incorporated

This paper presents a detailed review of the numerical modeling of inductively coupled air plasmas under local thermodynamic equilibrium and under chemical non‐equilibrium. First, the physico‐chemical models are described, i.e. the thermodynamics, transport phenomena and chemical kinetics models. Particular attention is given to the correct modelling of ambipolar diffusion in multi‐component chemical non‐equilibrium plasmas. Then, the numerical aspects are discussed, i.e. the space discretization and iterative solution strategies. Finally, computed results are presented for the flow, temperature and chemical concentration fields in an air inductively coupled plasma torch. Calculations are performed assuming local thermodynamic equilibrium and under chemical non‐equilibrium, where two different finite‐rate chemistry models are used. Besides important non‐equilibrium effects, we observe significant demixing of oxygen and nitrogen nuclei, which occurs due to diffusion regardless of the degree of non‐equilibrium in the plasma.

In this study, the authors performed a numerical investigation on the heating of a hot cathode with a conical tip by atmospheric arc, taking into account of the two temperature sheath effect for the first time.

The Schottky effect at cathode surface is considered, which is based on the analytic solution of a one-dimensional sheath model. The unified model allows one to predict the cathode-plasma heat transfer.

The total heat flux to cathode surface is smaller than its components’ heat flux due to electron back diffusion is as large as that due to ion flux with the increase of cathode length the total heat transported to the cathode body has an obvious decrease.

It is found that two kinds of solution exist for the cathode with a 140° conical tip; however, only one stable solution exists when the conical angle is reduced to 130°.

To compute the Navier‐Stokes equations of a non‐equilibrium weakly ionized air flow. This can help to have a better description of the flow‐field and the wall heat transfer in hypersonic conditions.

The numerical approach is based on a multi block finite volume method and using a Riemann's solver based on a MUSCL‐TVD algorithm. In the flux splitting procedure the modified speed of sound, due to the electronic mode, is implemented.

A good description of the shock standoff distance, of the wall heat fluxes and of the peak of electron density number in the shock layer.

The radiative effects are not included in this paper. For the very high Mach numbers, this can modify the shock layer parameters.

The knowledge of the wall heat transfer in the re‐entry body problems.

The building of a robust numerical code in order to well describe hypersonic air flow in high Mach numbers.

The aim of this paper is to develop and validate a model and a numerical code describing the laser matter interaction and also laser ablation. The laser wavelength is 193 nm and the pulse duration is several nanoseconds.

The developed model is based on strong theoretical background (cf. references). The electronic nonequilibrium aspect is always taken into account. The electronic nonequilibrium is one of the key aspect the UV laser matter interaction and must be treated carefully and that is not always the case. The numerical code was developed using efficient and versatile numerical methods. The model and simulations are always compared to experiments in order to validate them and also to find their limitations.

This work has greatly improved the code accuracy. The key role of the electronic nonequilibrium is also demonstrated. From experimental comparisons it is obvious that photo‐ablation should be taken into account for the lower fluences, but to do so, a completely new approach must be developed.

This work describes the whole laser ablation process with the electronic nonequilibrium effects properly modeled. The numerical results has always been confronted to experiments, in most of the cases the agreement was very good. When it was not the case, explanations have been sought along with ways to improve the approach.

Shows how a sensitivity analysis of different mobility models was carried out in order to reach the best fit of simulation results to measured data. Simulated data were compared to both electrical (IV‐characteristics) and optical (excess charge carrier distribution) results. The simulations included both steady state and transient investigations on a temperature scale ranging from room temperature up to 150°C. Concerning lifetimes, a two‐trap Shockley‐Read‐Hall (SRH) recombination model was implemented into the simulation code to be able to model the local lifetime variations of the irradiated samples. At high carrier concentration, the overall dominating recombination process is the Auger process. From experimental data the Auger coefficients seem to be concentration dependent too, and in addition, proposes a temperature dependence to the Auger coefficient.

The “thermodynamic model” constitutes a unified theoretical framework for the coupled simulation of carrier and energy flow in semiconductor devices under general ambient conditions such as, e.g., the presence of a quasi‐static magnetic field or the interaction with an electromagnetic radiation field (light). The current relations governing particle and heat transport are derived from the principles of irreversible phenomenological thermodynamics; the driving forces include drift, diffusion, thermal diffusion, and deflection by the Lorentz force. All transport coefficients may be interpreted in terms of well‐known thermodynamic effects and, hence, can be obtained from theoretical calculations as well as directly from experimental data. The thermodynamic model allows the consistent treatment of a wide variety of physical phenomena which are relevant for both the operation of electronic devices (e.g., lattice heating, hot carrier and low temperature effects) and the function of microsensors and actuators (e.g., thermoelectricity, galvanomagnetism and thermomagnetism).

The purpose of this paper is to present a comprehensive review on development and future trends in zinc oxide thin film transistors (ZnO TFTs). This paper presents the development of TFT technology starting from amorphous silicon, poly-Si to ZnO TFTs. This paper also discusses about transport and device modeling of ZnO TFT and provides a comparative analysis with other TFTs on the basis of performance parameters.

It highlights the need of high–k dielectrics for low leakage and low threshold voltage in ZnO TFTs. This paper also explains the effect of grain boundaries, trap densities and threshold voltage shift on the performance of ZnO TFT. Moreover, it also addresses the challenges like requirement of stable p-type ZnO semiconductor for various electronic applications and high value of ZnO mobility to meet growing demand of high-definition light emitting diode TV (HD-LED TV).

This review will motivate the readers to further investigate the conduction mechanism, best alternate for gate-dielectric and the deposition technique optimization for the enhancement of the performance of ZnO TFTs.

This is a literature review. The technological evolution of TFT in general and ZnO TFT in particular is presented in this paper.