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Physical models in device simulation of SI power pin‐diodes for optimal fitting of simulation results to measured data

M. Isberg (Dalarna University, School of Engineering, Borläge, Sweden)
P. Jonsson (Bofors Underwater Systems AB, Linköping, Sweden)
N. Keskitalo (ABB Corporate Research, Västerås, Sweden)
F. Masszi (ABB Corporate Research, Västerås, Sweden)
H. Bleicher (ABB Corporate Research, Västerås, Sweden)
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Abstract

Shows how a sensitivity analysis of different mobility models was carried out in order to reach the best fit of simulation results to measured data. Simulated data were compared to both electrical (IV‐characteristics) and optical (excess charge carrier distribution) results. The simulations included both steady state and transient investigations on a temperature scale ranging from room temperature up to 150°C. Concerning lifetimes, a two‐trap Shockley‐Read‐Hall (SRH) recombination model was implemented into the simulation code to be able to model the local lifetime variations of the irradiated samples. At high carrier concentration, the overall dominating recombination process is the Auger process. From experimental data the Auger coefficients seem to be concentration dependent too, and in addition, proposes a temperature dependence to the Auger coefficient.

Keywords

Citation

Isberg, M., Jonsson, P., Keskitalo, N., Masszi, F. and Bleicher, H. (1997), "Physical models in device simulation of SI power pin‐diodes for optimal fitting of simulation results to measured data", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 16 No. 3, pp. 144-156. https://doi.org/10.1108/03321649710367585

Publisher

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MCB UP Ltd

Copyright © 1997, MCB UP Limited

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