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A numerical method for solving the physics-based model of IGBT with all free-carrier injection conditions in the base region

Jiajia Chen (College of Electrical Engineering, Zhejiang University, Hangzhou, China)
Yuhan Ma (College of Electrical Engineering, Zhejiang University, Hangzhou, China)
Shiyou Yang (College of Electrical Engineering, Zhejiang University, Hangzhou, China)

COMPEL - The international journal for computation and mathematics in electrical and electronic engineering

ISSN: 0332-1649

Article publication date: 6 November 2017

147

Abstract

Purpose

The purpose of this paper is to provide an accurate model and method to simulate the transient performances of an insulated gate bipolar transistor (IGBT) in an arbitrary free-carrier injection condition.

Design/methodology/approach

A numerical model and method for solving the physics-based model, an ambipolar diffusion equation-based model, of an IGBT is proposed.

Findings

The results of the proposed model are very close to the tested ones.

Originality/value

A mathematical model for an IGBT considering all free-carrier injection conditions is introduced, and a numerical solution methodology is proposed.

Keywords

Acknowledgements

This work was supported by the National Natural Science Foundation of China (NSFC) under Grant No. 51490682.

Citation

Chen, J., Ma, Y. and Yang, S. (2017), "A numerical method for solving the physics-based model of IGBT with all free-carrier injection conditions in the base region", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 36 No. 6, pp. 1653-1662. https://doi.org/10.1108/COMPEL-12-2016-0558

Publisher

:

Emerald Publishing Limited

Copyright © 2017, Emerald Publishing Limited

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