A NON QUASI‐STATIC EMPIRICAL MODEL OF THE POWER PIN DIODE FOR CIRCUIT SIMULATION

Abstract

Models of power semiconductor devices for use in circuit simulators need to take account of effects which can be neglected in low power device models; they then become very complex and difficult to parameterise. The power PIN diode model described in this paper demonstrates how the use of empirically derived look‐up tables can simplify the characterisation problem and how non quasi‐static effects can be incorporated

Citation

Clarke, M.E. and Rahim, S. (1994), "A NON QUASI‐STATIC EMPIRICAL MODEL OF THE POWER PIN DIODE FOR CIRCUIT SIMULATION", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 13 No. 4, pp. 831-844. https://doi.org/10.1108/eb051899