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Many theories regarding whisker growth exist. It has been demonstrated in a variety of reference sources that tin whiskers can form in both pure tin and tin alloy deposits. Conversely, an equal number of claims exist in the literature demonstrating no whisker growth in the same types of deposits. The lack of an industry standard whisker test is a significant limitation in addressing tin whiskers. Historically in the electronics industry, addition of lead (Pb) was found to be an effective method of minimizing tin whisker formation and so for many years electronic components have been electroplated with tin‐lead (Sn‐Pb). With the advent of Pb‐free electronics finishing, the risk of tin whiskers is again a significant concern. This paper will review the theories behind whisker formation, identify the common characteristics of same, and demonstrate how Pb‐free electroplating processes can be formulated to minimize the risk of whisker formation.

This paper aims to present the results of a 32-year-old laboratory study of whisker growth from tin electrodeposits that was originally undertaken to gain an increased understanding of the phenomenon of tin whisker growth.

Whisker growth was evaluated using electroplated C-rings (both stressed and un-stressed) that were stored throughout in a desiccator at room temperature. Analysis has recently been undertaken to evaluate whisker growth and intermetallic growth after 32 years of storage. Scanning electron microscopy analysis has been performed to investigate whisker length and, using polished cross-sections, the morphology, thickness and type of intermetallic formation.

Normal tin-plated deposits on brass and steel with a copper barrier layer nucleated whiskers within five months, and in each case, these grew to lengths between 1 and 4.5 mm. For normal tin electroplated onto brass, a one- or two-month nucleation period was needed before whiskers developed. They reached a maximum length of about 1.5 mm after six months, and little or no further growth occurred during the subsequent 32 years. Very few whiskers grew on the tin-plated steel samples and no intermetallic formation was observed. None of the fused tin plating samples nucleated whiskers during the 32-year period.

Knowledge about vintage whiskers is important to take steps to increase the resiliency of space missions. Similarly, such knowledge is important to engineers engaged in products reaching their nominal end-of-life, but where, for reasons of economy, these products cannot be replaced.

This study represents a unique insight into whisker growth and intermetallic formation over an extremely long time period.

The purpose of this paper is to present new developments in electrolytic tin plating designed to eliminate the formation of whiskers over time, when tin is plated on copper.

Two main approaches were undertaken to achieve the desired results. The first was modification of the copper substrate prior to plating and the second was to modify the crystal structure of the tin deposit.

With the use of specific additives to the tin plating bath it was possible to achieve a crystal structure similar to that of the non‐whiskering tin/lead.

The technology is presently available commercially to plate electronic parts such as connectors and lead frames, etc.

The paper details a modified electroplating tin bath that produces a deposit that will not form whiskers over time.

The paper describes two well‐known and occasionally confused mechanisms for degradation of electronic circuitry. Intended as a tutorial for individuals working in electronic packaging who have limited background in materials and little experience with these mechanisms, the paper defines and describes the two latent shorting phenomena. Major papers and conferences dealing with the phenomena are cited. Electrolytic or electrochemical shorting is an electrical field‐induced mechanism that can destroy the integrity of modern, densely packed circuits operated in the presence of moisture and ionic contaminants. Examples of copper migration to form electroplated shorts in both thick film hybrid multilayer and printed circuit multilayer boards are discussed, and common features to both systems are outlined. Related mechanisms that may occur with the simple electrochemical (metal plating) mechanisms to produce a broad array of electrical isolation breakdowns are also described. The closing of this part of the paper is a brief review of the Sarnoff‐developed RCA/GE multilayer copper materials system. By design this system solves the problems raised regarding thick film copper multilayer latent failure mechanisms. The discussion of whisker growth is limited to proper whiskers, including those that grow without the application of external stress, squeeze whiskers, and whiskers that result from classic electromigration. All of these grow from solid sources in contact with the whisker. The whisker growth direction is not electrical field related. Identification is made of Sn, Cd, Sb and Zn as the materials classically found to grow whiskers at room temperature. Avoiding the use of electroplated films of Cd, Sb and Zn in close proximity to electronic circuitry is encouraged, and the modern requirements that Sn films be used only after melting, or be alloyed with lead, and not on brass substrates are discussed. In more recent literature indium alloys have been identified as room temperature whisker growth systems. Finally, mechanical design to eliminate squeeze whisker shorting that can result from fasteners in contact with the above and other metals is briefly treated.

The aim of this paper is to present a review of the tin whisker growth phenomena. The study focuses mainly on whisker growth in a corrosive climate when the main inducing factor of the whisker growth is oxidation. The tin whisker phenomenon is still a big challenge in lead-free reflow soldering technology. Modern lead-free alloys and surface finishes with high tin content are considered to be possible sources of whisker development, also the evolution of electronic devices towards further complexity and miniaturization points to an escalation of the reliability risks.

The present work was based on a worldwide literature review of the substantial previous works in the past decade, as well as on the results and experience of the authors in this field.

The effect of corrosion on tin whisker growth has been under-represented in reports of mainstream research; however, in the past five years, significant results were obtained in the field which raised the corrosion phenomena from being a side effect category into one of the main inducing factors. This paper summarizes the most important findings of this field.

This literature review provides engineers and researchers with a better understanding of the role of corrosion in tin whisker growth and the current challenges in tin whisker mitigation.

The unique challenges and future research directions about the tin whisker phenomenon were shown to highlight rarely discussed risks and problems in lead-free soldering reliability.

The purpose of this paper is to present the results from work on a project aimed at evaluating six different copper alloy substrates coated with pure tin for tin whisker growth. The influence of intermetallic growth between the copper alloy substrate and the tin‐plating on the growth of tin whiskers has been investigated.

The experiment consisted of six substrates of different alloys of copper, plated with bright tin including copper beryllium, cartridge brass, phosphor bronze, Cu‐Ni‐Si “7025” and Cu‐Ni‐Sn “spinodal”. The samples were mechanically stressed and then subjected to temperature humidity storage conditions for 1,000 h. These samples were then evaluated for tin whisker growth and intermetallic layer thickness.

Of the six samples five showed tin whisker growth. For these samples the intermetallic layer thickness has little effect on tin whisker growth. Sample with Cu‐Ni‐Sn “spinodal” alloy substrate showed very low whisker density and comparatively lower maximum whisker length than the other tested substrate material.

More samples per condition should be evaluated to bolster the conclusions. For the sample without tin whisker growth, holes on the surface of the plating were observed. The holes in the plating provide an opportunity for stress relaxation after the plating process. Since stress in the plating layer is low, tin whiskers are not formed on the sample surface.

The paper details the tin whisker growth on six tin plated copper substrate samples. The intermetallic layer thickness for each copper alloy substrate is calculated. The relationship between the intermetallic layer thickness and tin whisker growth for the six substrates are discussed.

This paper describes a state‐of‐the‐art process for immersion tin plating of PCBs which is used to preserve solderability prior to assembly. The process sequence is described and preventive measures for handling the final surface finish is documented. A solderability test method and basic requirements for fluxes and soldering parameters are also described. Quantitative results on the formation of intermetallic tin‐copper phases are shown and their influence on the formation of tin whiskers explained. A problem in production is the precise measurement of the tin thickness, therefore different measuring methods are also detailed. Finally, the mechanism of tin deposition and the formation of tetravalent tin and the relationship with bath age and deposit quality are discussed.

The filamentary growths of single crystals on material surfaces are termed whiskers. They are seen to nucleate and grow on certain electronic materials either from vapour and liquid phases or by a process induced by residual stresses in electroplated surfaces. Whisker growth does not depend on the existence of an electric field and surfaces prone to their growth may nucleate and form whiskers as a result of exposure to a space environment. This paper includes a detailed examination of tin whiskers which were found to have 1 to 4 micron diameters and lengths exceeding 2 mm. Some were found to carry currents between 22 and 32 mA before burning out. Conductive whiskers can cause extensive short circuit damage to spacecraft electronics particularly as miniature devices progressively employ closer spacings between conductors. Several modes of whisker growth on spacecraft electronic materials (molybdenum, tungsten, Kovar, tin) have been observed and are described. Tin, cadmium and zinc surfaces can support stress‐induced whisker growth and it is recommended that these metal finishes are excluded from spacecraft design and possibly replaced by a tin‐lead alloy.

To present a methodology, including the algorithms, to quantify the risk of failure from tin whiskers and to present a dynamic risk trend based on the distribution of each of the whisker growth parameters, generated from experiments over a period of time. This paper also aims to demonstrate the practical application of the methodology developed.

This paper has been written to provide a methodology to assess tin whisker risk due to fixed whiskers in electronic products. The risk assessment process has been detailed in the paper. To demonstrate the usefulness of the methodology, a tin whisker risk assessment was conducted for a printed circuit board (PCB) in operation.

Based on the experimental tin whisker growth data it is observed that growth rates of mean length and average density decrease with time. Based on the risk assessment, it was estimated that for the common matte tin over copper finish, the failure risk for the circuit card assembly was 4 per cent over 20 years. It was recommended that, for this product, components with bright tin lead finish should not be used. It was also found that the effectiveness of the conformal coating on this PCB is limited by the relative risk of the components on the board.

The paper provides a new methodology to assess fixed tin whisker risk in electronic products. The methodology provides a dynamic risk trend with time because the algorithm incorporates distributional data of whisker growth and the distributional data as a function of time. This type of assessment was lacking in the previous studies.