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The purpose of this paper is to develop and apply accurate and original models to understand and analyze the effects of the fabrication temperatures on thermal-induced stress and speed performance of nano positively doped metal oxide semiconductor (pMOS) transistors.

The speed performances of nano pMOS transistors depend strongly on the mobility of holes, which itself depends on the thermal-induced extrinsic stress σ. The author uses a finite volume method to solve the proposed system of partial differential equations needed to calculate the thermal-induced stress σ accurately.

The thermal extrinsic stress σ depends strongly on the thermal intrinsic stress σ₀, thermal intrinsic strain ε₀, elastic constants C11 and C12 and the fabrication temperatures. In literature, the effects of fabrication temperatures on C11 and C12 needed to calculate thermal-induced stress σ₀ have been ignored. The new finding is that if the effects of fabrication temperatures on C11 and C12 are ignored, then, the values of stress σ₀ and σ will be overestimated and, then, not accurate. Another important finding is that the speed performance of nano pMOS transistors will increase if the fabrication temperature of silicon-germanium films used as stressors is increased.

To predict correctly the thermal-induced stress and speed performance of nano pMOS transistors, the effects of fabrication temperatures on the elastic constants required to calculate the thermal-induced intrinsic stress σ₀ should be taken into account.

There are three levels of originalities. The author considers the effects of the fabrication temperatures on extrinsic stress σ, intrinsic stress σ₀ and elastic constants C11 and C12.

The purpose of this paper is to provide a new three dimension physically based model to calculate the initial stress in silicon germanium (SiGe) film due to thermal mismatch after deposition. We should note that there are many other sources of initial stress in SiGe films or in the substrate. Here, the author is focussing only on how to model the initial stress arising from thermal mismatch in SiGe film. The author uses this initial stress to calculate numerically the resulting extrinsic stress distribution in a nanoscale PMOS transistor. This extrinsic stress is used by industrials and manufacturers as Intel or IBM to boost the performances of the nanoscale PMOS and NMOS transistors. It is now admitted that compressive stress enhances the mobility of holes and tensile stress enhances the mobility of electrons in the channel.

During thermal processing, thin film materials like polysilicon, silicon nitride, silicon dioxide, or SiGe expand or contract at different rates compared to the silicon substrate according to their thermal expansion coefficients. The author defines the thermal expansion coefficient as the rate of change of strain with respect to temperature.

Several numerical experiments have been used for different temperatures ranging from 30 to 1,000°C. These experiments did show that the temperature affects strongly the extrinsic stress in the channel of a 45 nm PMOS transistor. On the other hand, the author has compared the extrinsic stress due to lattice mismatch with the extrinsic stress due to thermal mismatch. The author found that these two types of stress have the same order (see the numerical results on Figures 4 and 12). And, these are great findings for semiconductor industry.

Front-end process induced extrinsic stress is used by manufacturers of nanoscale transistors as the new scaling vector for the 90 nm node technology and below. The extrinsic stress has the advantage of improving the performances of PMOSFETs and NMOSFETs transistors by enhancing mobility. This mobility enhancement fundamentally results from alteration of electronic band structure of silicon due to extrinsic stress. Then, the results are of great importance to manufacturers and industrials. The evidence is that these results show that the extrinsic stress in the channel depends also on the thermal mismatch between materials and not only on the material mismatch.

The model the author is proposing to calculate the initial stress due to thermal mismatch is novel and original. The author validated the values of the initial stress with those obtained by experiments in Al-Bayati et al. (2005). Using the uniaxial stress generation technique of Intel (see Figure 2). Al-Bayati et al. (2005) found experimentally that for 17 percent germanium concentration, a compressive initial stress of 1.4 GPa is generated inside the SiGe layer.

The purpose of this study is to investigate the unstable propagation of parallel hydraulic fractures induced by interferences of adjacent perforation clusters and thermal diffusion. Fracture propagation in the process of multistage fracturing of a rock mass is deflected owing to various factors. Hydrofracturing of rock masses in deep tight reservoirs involves thermal diffusion, fluid flow and deformation of rock between the rock matrix and fluid in pores and fractures.

To study the unstable propagation behaviours of three-dimensional (3D) parallel hydraulic fractures induced by the interferences of adjacent perforation clusters and thermal diffusion, a 3D engineering-scale numerical model is established under different fracturing scenarios (sequential, simultaneous and alternate fracturing) and different perforation cluster spacings while considering the thermal-hydro-mechanical coupling effect. Stress disturbance region caused by fracture propagation in a deep tight rock mass is superimposed and overlaid with multiple fractures, resulting in a stress shadow effect and fracture deflection.

The results show that the size of the stress shadow areas and the interaction between fractures increase with decreasing multiple perforation cluster spacing in horizontal wells. Alternate fracturing can produce more fracture areas and improve the fracturing effect compared with those of sequential and simultaneous fracturing. The larger the temperature gradient between the fracturing fluid and rock matrix, the stronger the thermal diffusion effect, and the effect of thermal diffusion on the fracture propagation is significant.

This study focuses on the behaviours of the unstable dynamic propagation of 3D parallel hydraulic fractures induced by the interferences of adjacent perforation clusters and thermal diffusion. Further, the temperature field affects the fracture deflection requires could be investigated from the mechanisms; this paper is to study the unstable propagation of fractures in single horizontal well, which can provide a basis for fracture propagation and stress field disturbance in multiple horizontal wells.

The increased use recently of area‐array technology in electronic packaging has similarly increased the importance of predicting the thermal distribution of area‐array solder interconnection. As the interconnection technology for flip chip package is getting finer and smaller, it is extremely difficult to obtain the accurate values of thermal stresses by direct experimental measurements. Different types of solder bumps used for interconnection would also influence the thermal distribution within the package. Because the solder balls are too small for direct measurement of their stresses, finite element method (FEM) was used for obtaining the stresses instead.

This paper will discuss the results of the thermal stress distribution using numerical method via ABAQUS software. The variation of the thermal stress distribution with the temperature gradient model was evaluated to study the effects of the different material thermal conductivity of solder bumps used. A detailed 2D finite element model was constructed to perform 2D plain strain elastoplastic analysis to predict areas of high stress.

It is found that thermal distribution of solder bumps starts to propagate from the top region to the bottom region of the solder balls. Other than that, thermal stress effect increases in parallel with the increasing of the temperature. The simulation results shows that leaded solder balls, SnPb have higher maximum thermal stress level compared to lead‐free SAC solder balls.

The paper describes combination of stress with thermal loading correlation on a flip chip model. The work also shows how the different thermal conductivity on solder balls influences the thermal induced stress on the flip chip package.

As the solution to improve fatigue life and mechanical reliability of packaging structure, the material selection in PCB stack-up and partitioning design on PCB to eliminate the electromagnetic interference by keeping all circuit functions separate are suggested to be optimized from the mechanical stress point of view.

The present paper investigated the effect of RO4350B and RT5880 printed circuit board (PCB) laminates on fatigue life of the QFN (quad flat no-lead) packaging structure for high-frequency applications. During accelerated thermal cycling between −50 °C and 100 °C, the mismatched coefficients of thermal expansion (CTE) between packaging and PCB materials, initial PCB warping deformation and locally concentrated stress states significantly affected the fatigue life of the packaging structure. The intermetallics layer and mechanical strength of solder joints were examined to ensure the satisfactorily soldering quality prior to the thermal cycling process. The failure mechanism was investigated by the metallographic observations using a scanning electron microscope.

Typical fatigue behavior was revealed by grain coarsening due to cyclic stress, while at critical locations of packaging structures, the crack propagations were confirmed to be accompanied with coarsened grains by dye penetration tests. It is confirmed that the cyclic stress induced fatigue deformation is dominant in the deformation history of both PCB laminates. Due to the greater CTE differences in the RT5880 PCB laminate with those of the packaging materials, the thermally induced strains among different layered materials were more mismatched and led to the initiation and propagation of fatigue cracks in solder joints subjected to more severe stress states.

In addition to the electrical insulation and thermal dissipation, electronic packaging structures play a key role in mechanical connections between IC chips and PCB.

The main purpose of this paper is to present a comprehensive upscale theory of the thermo-mechanical coupling particle simulation for three-dimensional (3D) large-scale non-isothermal problems, so that a small 3D length-scale particle model can exactly reproduce the same mechanical and thermal results with that of a large 3D length-scale one.

The objective is achieved by following the scaling methodology proposed by Feng and Owen (2014).

After four basic physical quantities and their similarity-ratios are chosen, the derived quantities and its similarity-ratios can be derived from its dimensions. As the proposed comprehensive 3D upscale theory contains five similarity criteria, it reveals the intrinsic relationship between the particle-simulation solution obtained from a small 3D length-scale (e.g. a laboratory length-scale) model and that obtained from a large 3D length-scale (e.g. a geological length-scale) one. The scale invariance of the 3D interaction law in the thermo-mechanical coupled particle model is examined. The proposed 3D upscale theory is tested through two typical examples. Finally, a practical application example of 3D transient heat flow in a solid with constant heat flux is given to illustrate the performance of the proposed 3D upscale theory in the thermo-mechanical coupling particle simulation of 3D large-scale non-isothermal problems. Both the benchmark tests and application example are provided to demonstrate the correctness and usefulness of the proposed 3D upscale theory for simulating 3D non-isothermal problems using the particle simulation method.

The paper provides some important theoretical guidance to modeling 3D large-scale non-isothermal problems at both the engineering length-scale (i.e. the meter-scale) and the geological length-scale (i.e. the kilometer-scale) using the particle simulation method directly.

By solving a long-wave evolution model numerically for power-law fluids, the authors aim to investigate the hydrodynamic and thermal characteristics of thermocapillary flow in an evaporating thin liquid film of pseudoplastic fluid.

The flow reversal attributed to the thermocapillary action is manifestly discernible through the streamline plots.

The thermocapillary strength is closely related to the viscosity of the fluid, besides its surface tension. The thermocapillary flow prevails in both Newtonian and pseudoplastic fluids at a large Marangoni number and the thermocapillary effect is more significant in the former. The overestimate in the Newtonian fluid is larger than that in the pseudoplastic fluid, owing to the shear-thinning characteristics of the latter.

This study provides insights into the essential attributes of the underlying flow characteristics in affecting the thermal behavior of thermocapillary convection in an evaporating thin liquid film of the shear-thinning fluids.

This paper presents the physical, mathematical and numerical models forming the main structure of the numerical analysis of the thermal, hydral and mechanical behaviour of normal, high‐performance concrete (HPC) and ultra‐high performance concrete (UHPC) structures subjected to heating. A fully coupled non‐linear formulation is designed to predict the behaviour, and potential for spalling, of heated concrete structures for fire and nuclear reactor applications. The physical model is described in more detail, with emphasis being placed upon the real processes occurring in concrete during heating based on tests carried out in several major laboratories around Europe as part of the wider high temperature concrete (HITECO) research programme. A number of experimental and modelling advances are presented in this paper. The stress‐strain behaviour of concrete in direct tension, determined experimentally, is input into the model. The hitherto unknown micro‐structural, hydral and mechanical behaviour of HPC/UHPC were determined experimentally and the information is also built into the model. Two examples of computer simulations concerning experimental validation of the model, i.e. temperature and gas pressure development in a radiatively heated HPC wall and hydro‐thermal and mechanical (damage) performance of a square HPC column during fire, are presented and discussed in the context of full scale fire tests done within the HITECO research programme.

This bibliography is offered as a practical guide to published papers, conference proceedings papers and theses/dissertations on the finite element (FE) and boundary element (BE) applications in different fields of biomechanics between 1976 and 1991. The aim of this paper is to help the users of FE and BE techniques to get better value from a large collection of papers on the subjects. Categories in biomechanics included in this survey are: orthopaedic mechanics, dental mechanics, cardiovascular mechanics, soft tissue mechanics, biological flow, impact injury, and other fields of applications. More than 900 references are listed.

This paper gives a review of the finite element techniques (FE) applied in the area of material processing. The latest trends in metal forming, non‐metal forming and powder metallurgy are briefly discussed. The range of applications of finite elements on the subjects is extremely wide and cannot be presented in a single paper; therefore the aim of the paper is to give FE users only an encyclopaedic view of the different possibilities that exist today in the various fields mentioned above. An appendix included at the end of the paper presents a bibliography on finite element applications in material processing for the last five years, and more than 1100 references are listed.