Search results

High packaging density in the present VLSI era builds an acute power crisis, which limits the use of MOSFET device as a constituent block in CMOS technology. This leads researchers in looking for alternative devices, which can replace the MOSFET in CMOS VLSI logic design. In a quest for alternative devices, tunnel field effect transistor emerged as a potential alternative in recent times. The purpose of this study is to enhance the performances of the proposed device structure and make it compatible with circuit implementation. Finally, the performances of that circuit are compared with CMOS circuit and a comparative study is made to find the superiority of the proposed circuit with respect to conventional CMOS circuit.

Silicon–germanium heterostructure is currently one of the most promising architectures for semiconductor devices such as tunnel field effect transistor. Analytical modeling is computed and programmed with MATLAB software. Two-dimensional device simulation is performed by using Silvaco TCAD (ATLAS). The modeled results are validated through the ATLAS simulation data. Therefore, an inverter circuit is implemented with the proposed device. The circuit is simulated with the Tanner EDA tool to evaluate its performances.

The proposed optimized device geometry delivers exceptionally low OFF current (order of 10^−18 A/um), fairly high ON current (5x10^−5 A/um) and a steep subthreshold slope (20 mV/decade) followed by excellent ON–OFF current ratio (order of 10^13) compared to the similar kind of heterostructures. With a very low threshold voltage, even lesser than 0.1 V, the proposed device emerged as a good replacement of MOSFET in CMOS-like digital circuits. Hence, the device is implemented to construct a resistive inverter to study the circuit performances. The resistive inverter circuit is compared with a resistive CMOS inverter circuit. Both the circuit performances are analyzed and compared in terms of power dissipation, propagation delay and power-delay product. The outcomes of the experiments prove that the performance matrices of heterojunction Tunnel FET (HTFET)-based inverter are way ahead of that of CMOS-based inverter.

Germanium–silicon HTFET with stack gate oxide is analytically modeled and optimized in terms of performance matrices. The device performances are appreciable in comparison with the device structures published in contemporary literature. CMOS-like resistive inverter circuit, implemented with this proposed device, performs well and outruns the circuit performances of the conventional CMOS circuit at 45-nm technological node.

This paper aims to investigate the influence of composite solder joint preparation on the thermal properties of metal-oxide-semiconductor field-effect transistors (MOSFETs) and the mechanical strength of the soldered joint.

Reinforced composite solder joints with the addition of titanium oxide nanopowder (TiO₂) were prepared. The reference alloy was Sn99Ag0.3Cu0.7. Reinforced joints differed in the weight percentage of TiO₂, ranging from 0.125 to 1.0 Wt.%. Two types of components were used for the tests. The resistor in the 0805 package was used for mechanical strength tests, where the component was soldered to the FR4 substrate. For thermal parameters measurements, a power element MOSFET in a TO-263 package was used, which was soldered to a metal core printed circuit board (PCB) substrate. Components were soldered in batch IR oven.

Shear tests showed that the addition of titanium oxide does not significantly increase the resistance of the solder joint to mechanical damage. Titanium oxide addition was shown to not considerably influence the soldered joint’s mechanical strength compared to reference samples when soldered in batch ovens. Thermal resistance R_thj-a of MOSFETs depends on TiO₂ concentration in the composite solder joint reaching the minimum R_thj at 0.25 Wt.% of TiO₂.

Mechanical strength: TiO₂ reinforcement shows minimal impact on mechanical strength, suggesting altered liquidus temperature and microstructure, requiring further investigation. Thermal performance: thermal parameters vary with TiO₂ concentration, with optimal performance at 0.25 Wt.%. Experimental validation is crucial for practical application. Experimental confirmation: validation of optimal concentrations is essential for accurate assessment and real-world application. Soldering method influence: batch oven soldering may affect mechanical strength, necessitating exploration of alternative methods. Thermal vs mechanical enhancement: while TiO₂ does not notably enhance mechanical strength, it improves thermal properties, highlighting the need for balanced design in power semiconductor assembly.

Incorporating TiO₂ enhances thermal properties in power semiconductor assembly. Optimal concentration balancing thermal performance and mechanical strength must be determined experimentally. Batch oven soldering may influence mechanical strength, requiring evaluation of alternative techniques. TiO₂ composite solder joints offer promise in power electronics for efficient heat dissipation. Microstructural analysis can optimize solder joint design and performance. Rigorous quality control during soldering ensures consistent thermal performance and mitigates negative effects on mechanical strength.

The integration of TiO₂ reinforcement in solder joints impacts thermal properties crucial for power semiconductor assembly. However, its influence on mechanical strength is limited, potentially affecting product reliability. Understanding these effects necessitates collaborative efforts between researchers and industry stakeholders to develop robust soldering techniques. Ensuring optimal TiO₂ concentration through experimental validation is essential to maintain product integrity and safety standards. Additionally, dissemination of research findings and best practices can empower manufacturers to make informed decisions, fostering innovation and sustainability in electronic manufacturing processes. Ultimately, addressing these social implications promotes technological advancement while prioritizing consumer trust and product quality in the electronics industry.

The research shows the importance of the soldering technology used to assemble MOSFET devices.

The primary aim of this paper is to present a novel design approach for a ring voltage-controlled oscillator (VCO) suitable for L-band applications, whose oscillation frequency is less sensitive to power supply variations. In a few decades, with the advancement of modern wireless communication equipment, there has been an increasing demand for low-power and robust communication systems for longer battery life. A sudden drop in power significantly affects the performance of the VCO. Supply insensitive circuit design is the backbone of uninterrupted VCO performance. Because of their important roles in a variety of applications, VCOs and phase locked loops (PLLs) have been the subject of significant research for decades. For a few decades, the VCO has been one of the major components used to provide a local frequency signal to the PLL.

First, this paper chose to present recent developments on implemented techniques of ring VCO design for various applications. A complementary metal oxide semiconductor (CMOS)-based supply compensation technique is presented, which aims to reduce the change in oscillation frequency with the supply. The proposed circuit is designed and simulated on Cadence Virtuoso in 0.18 µm CMOS process under 1.8 V power supply. Active differential configuration with a cross-coupled NMOS structure is designed, which eliminates losses and negates supply noise. The proposed VCO is designed for excellent performance in many areas, including the L-band microwave frequency range, supply sensitivity, occupied area, power consumption and phase noise.

This work provides the complete design aspect of a novel ring VCO design for the L-band frequency range, low phase noise, low occupied area and low power applications. The maximum value of the supply sensitivity for the proposed ring VCO is 1.31, which is achieved by changing the VDD by ±0.5%. A tuning frequency range of 1.47–1.81 GHz is achieved, which falls within the L-band frequency range. This frequency range is achieved by varying the control voltage from 0.0 to 0.8 V, which shows that the proposed ring VCO is also suitable for low voltage regions. The total power consumed by the proposed ring VCO is 14.70 mW, a remarkably low value using this large transistor count. The achievable value of phase noise is −88.76 dBc/Hz @ 1 MHz offset frequency, which is a relatively small value. The performance of the proposed ring VCO is also evaluated by the figure of merit, achieving −163.13 dBc/Hz, which assures the specificity of the proposed design. The process and temperature variation simulations also validate the proposed design. The proposed oscillator occupied an extremely small area of only 0.00019 mm² compared to contemporary designs.

The proposed CMOS-based supply compensation method is a unique design with the size and other parameters of the components used. All the data and results obtained show its originality in comparison with other designs. The obtained results are preserved to the fullest extent.

Field-effect transistor (FET) has excellent electronic properties and inherent signal amplification, and with the development of nanomaterials technology, FET biosensors with nanomaterials as channels play an important role in the field of heavy metal ion detection. This paper aims to review the research progress of silicon nanowire, graphene and carbon nanotube field-effect tube biosensors for heavy metal ion detection, so as to provide technical support and practical experience for the application and promotion of FET.

The article introduces the structure and principle of three kinds of FET with three kinds of nanomaterials, namely, silicon nanowires, graphene and carbon nanotubes, as the channels, and lists examples of the detection of common heavy metal ions by the three kinds of FET sensors in recent years. The article focuses on the advantages and disadvantages of the three sensors, puts forward measures to improve the performance of the FET and looks forward to its future development direction.

Compared with conventional instrumental analytical methods, FETs prepared using nanomaterials as channels have the advantages of fast response speed, high sensitivity and good selectivity, among which the diversified processing methods of graphene, the multi-heavy metal ions detection of silicon nanowires and the very low detection limit and wider detection range of carbon nanotubes have made them one of the most promising detection tools in the field of heavy metal ions detection. Of course, through in-depth analysis, this type of sensor has certain limitations, such as high cost and strict process requirements, which are yet to be solved.

This paper elaborates on the detection principle and classification of field-effect tube, investigates and researches the application status of three kinds of FET biosensors in the detection of common heavy metal ions. By comparing the advantages and disadvantages of each of the three sensors in practical applications, the paper focuses on the feasibility of improvement measures, looks forward to the development trend in the field of heavy metal detection and ultimately promotes the application of field-effect tube development technology to continue to progress, so that its performance continues to improve and the application field is constantly expanding.

The purpose of this research is to study the performance of piezoresistive pressure sensors using polysilicon as the piezoresistive material, which is typically used to measure pressure in high-temperature environments.

The performance of this sensor is enhanced by studying the influence of multi-turn configuration at which the piezoresistors are arranged. Different configurations are studied and compared by laying down their analytical solution.

The validation of analytical results is accomplished through finite element analysis using the software COMSOL Multiphysics. The best configuration, which uses a partial triple-turn configuration, was able to achieve a sensitivity of 116.00 mV/V/MPa over a simulated pressure range of 0 to 500 KPa.

The literature shows the study of single-turn and double-turn meander-shaped configuration of micro-electromechanical systems piezoresistive pressure sensor but multi-turn meander-shaped configuration using a square silicon diaphragm has not been reported. Its study has reflected promising results than its counterparts based on key performance parameters such as sensitivity and linearity and are more effective to be used for automotive, aviation, biomedical and consumer electronics applications.

This study aims to provide a microfluidic blood glucose sensing platform based on integrated interdigitated electrode arrays (IDEAs) on a flexible quartz glass substrate, adhering closely to pertinent electrochemical characterizations.

Sensors are the key elements of the modern electronics era through which all the possible physical quantities can be detected and converted into their equivalent electrical form and processed further. But to make the sensing environment better, various types of innovative architectures are being developed nowadays and among them interdigitated electrodes are quite remarkable in terms of their sensing capability. They are a well-qualified candidate in the field of gas sensing and biosensing, but even their sensitivities are getting saturated due to their physical dimensions. Most of the thin film IDEAs fabricated by conventional optical lithographic techniques do not possess a high surface-to-volume ratio to detect the target specified and that reduces their sensitivity factor. In this context, a classic conductive carbon-based highly sensitive three dimensional (3D) IDEA-enabled biosensing system has been conceived on a transparent and flexible substrate to measure the amount of glucose concentration present in human blood. 3D IDEA possesses a way better capacitive sensing behavior compared to conventional thin film microcapacitive electrodes. To transmit the target biological analyte sample property for the detection purpose to the interdigitated array-based sensing platform, the design of a microfluidic channel is initiated on the same substrate. The complex 3D Inter Digital array structure improves the overall capacitance of the entire sensing platform and the reactive surface area as well. The manufactured integrated device displays a decent value of sensitivity in the order of 5.6 µA mM⁻¹ cm⁻².

Development of a low-cost array-based integrated and highly flexible microfluidic biochip to extract the quantity of glucose present in human blood.

Potential future research opportunities in the realm of integrated miniaturized, low-cost smart biosensing systems may arise from this study.

The objective of the research is to evaluate the carbon footprint of the green asparagus (Asparagus officinalis L.) supply chain, encompassing the agricultural production to the packaging stage in Italy, as it is the sixth largest producer and the second largest in Europe. It provides an assessment in the province of Foggia and highlights the global perspective of the carbon footprint application in agro-food systems.

The carbon footprint (ISO 14067:2018) considers 1 t of packaged fresh asparagus as a functional unit in the agricultural production and packaging stage and is based on primary data collected in one of the leading companies of asparagus production in the province of Foggia, which markets about 0.21 kt of asparagus per year produced in about 31 ha. Data were integrated with face-to-face in-depth interviews and pre-filled checklists.

Findings show that the carbon footprint of 1 t of packaged fresh asparagus is equivalent to 335.31 kgCO2eq, of which 61% in the agricultural stage and 39% in the packaging one. The majority of the emissions are associated with the fertigation and the diesel consumption for the transportation of workers. Farmers should adopt green electricity so as to reduce the emissions associated with the electric pump for the extraction of water from artesian wells. Moreover, it would be desirable to replace mineral urea phosphate with organic fertilizers.

To the best of the authors’ knowledge, scholars have not yet investigated the environmental impacts of the green asparagus supply chain, even if it represents one of the most cultivated vegetables worldwide, with a global production that amounts to 8.5 Mt per year.