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Ball‐bumping is a flexible low cost bumping technology based on the conventional wire bonding procedure. It is applicable to single chips or whole wafers as well as to substrates. As established wire‐bonding machines can be used, expensive bumping‐process equipment for phototooling and plating is not necessary. Flip‐chip bonding is the most advantageous attach method of high frequency applications. Compared with wire‐bonding and TAB it allows the highest contact density, the shortest signal paths and lowest interconnection parasitics. The reduced pad sizes and pitches, not only of GaAs devices, demand a well controlled bump deformation during flip‐chip bonding. This work develops process parameters for the flip‐chip bonding of silicon and GaAs devices with respect to the best interconnection result by lowest bonding force and ball‐bump deformation. Ball‐bumps with diameters of 50 and 80 urn (2.0 and 3.2 mils) were created using 98% AuPd bump wire with diameters of 18 µm (0.7 mil) and 25 µm (1.0 mil) respectively. Ball‐bumping with a minimal pitch of 70 µm (2.8 mils) has been achieved. A special preparation allowed the shear test investigation of each bump/pad interface after flip‐chip attach. Bonding forces of 20 and 25 cN/bump respectively lead to a good welding in the bump/substrate interface due to the special shape of ball‐bumps. For silicon devices which have a pad metallisation of aluminium, the shear forces of the bump/pad interface increase after flip‐chip bonding, too. No cratering of GaAs and silicon occurs after flip‐chip bonding due to a low bonding force ramp of 5 cN/s and 10 cN/s respectively. The flip‐chip attach of a Fujitsu FLR 016 GaAs‐FET which has pad sizes of 35 urn is demonstrated. In this case, substrate bumping is the more advantageous bumping method. The feasibility of fine‐pitch TAB attach using ball‐bumps is introduced. 100 µm (3.9 mils) pitch silicon devices with 328 pads were ball‐bumped for both solder and thermal‐compression TAB. Bond forces were in the range of 9–11 cN/bump and 15–21 cN/bump respectively. Pull forces of approximately 30 cN/lead show good results of the bump/lead interconnection after TAB.

An evaluation of the feasibility of copper ball‐wedge bonding on Au, Cu thick film and aluminium metallisations was carried out. This evaluation is not merely a check for feasibility, but will also give more insight into the problems concerning copper ball‐wedge bonding. This article does not pretend to represent profound research on copper ball bonding, but will give qualitative insight. Copper ball bonding, without using cover gas, is possible, but the bond quality decreases. Extrusion and penetration of the ball bond in the substrates are caused by the hardness of the copper. This can only be avoided when the hardness of the substrate is matched to the hardness of the copper ball/wire. Bonding mechanisms are similar for bonding on thick film to those for bonding on metallisations. Matching hardness of the substrate to the ball/wire seems to be a necessity for proper ball‐wedge bonding.

The purpose of this paper is to attempt to study the failure mechanism of BGA (ball grid array) Cu wire bond ball lift and specifically focused on substrate outgassing’s impact on Cu wire bonding quality and reliability.

The Galvanic corrosion theory has been widely adopted in explaining the failure mechanism of Cu ball bond lift issue during reliability test or field application in the presence of moisture. In this study, ion chromatography was performed on BGA substrate halogen analysis. EDX (energy-dispersive X-ray spectroscopy) was also used to detect the contaminant’s element at the bottom surface of a window clamp. Further FTIR (Fourier transform infrared spectroscopy) analysis verified that the contamination is from substrate outgassing during wire bonding. A new window clamp design proved effective in reducing the negative impact from substrate outgassing during wire bonding.

The solder mask in a fresh substrate contains a chlorine element. The chlorine can be detected in the BGA substrate outgassing during wire bonding by FTIR and EDX analyses, which have a negative impact on the Cu wire bonding. The window clamp with a larger opening can reduce the negative impact of the Cu wire bonding from the BGA substrate outgassing.

Because of the limitation of time and resources, bonding pad surface contamination from substrate outgassing and its correlation with Cu bonding ball lift failure after reliability test will be studied in depth later.

The BGA substrate outgassing has negative impacts on Cu wire bondability. A window clamp with a larger opening can reduce the negative impact from substrate outgassing.

In a plastic BGA package, the glass transition temperature of 170‐215°C for bismaleimide triazine (BT) substrate puts an upper ceiling to the usable wire bond temperature. To compensate for the limitation in thermal energy, high frequency thermosonic bonding was proposed and successfully demonstrated for plastic BGA wire bonding. Design of experiment (DOE) and response surface methods (RSM) for process optimisation were used; bonded areas were also analysed using scanning electron microscope (SEM). Of the four major bonding parameters were investigated, ultrasonic power and bond force appeared to be the most important control factor for wire pulls and ball shear force optimisation. The results show that bonding at low temperature is viable with the use of high frequency transducer wire bonder.

Optimization of the process parameters remains a challenging task in thermosonic wire bonding due to relatively poor understanding of the bonding mechanism. The purpose of this paper is to understand initial bond formation in thermosonic gold wire bonding on aluminium metallization pads and the effect of bonding time on the initiation of bonding.

A gold wire (20 μm diameter/99.99 per cent wt%) was bonded to aluminium metallization pads (1 μm thick) on a silicon chip using a commercial ball/wedge automatic bonder. Bonding parameters were selected specifically to produce underdeveloped ball bonds so that ball lift‐off occurred during looping process. The lift‐off footprints on the aluminium metallization pads and their evolution were carried out using optical microscopy and scanning electron microscopy. A model is proposed to elaborate the effect of bonding time on initiation of bonding.

The obtained results showed that metallurgical bonding initiated at the peripheral areas of the contact area situated along the direction of ultrasonic vibration. Those areas extended inwards with bonding time, eventually covering the entire contact area.

This paper describes how bond initiation and its evolution in thermosonic gold wire bonding on aluminium metallization is ascertained by observing lift‐off footprints. The understanding of bonding mechanism benefits the optimization of process parameters and improvement of bondability in thermosonic wire bonding.

The purpose of this paper is to investigate the reliability of wire bonds with three varying ball bond diameters, which are ball bonded with three different sizes of gold wires in light-emitting diode (LED) package under high-temperature environment. In automotive applications, “lifted ball bond” issue is a potential critical point for LED device reliability, as the wire bonds are usually stressed under high operating temperature during their lifetime. Moreover, the reliability of wire bonds in recent LED production has fallen under scrutiny due to the practice of reducing wire diameters to cut down production costs.

Three gold wires with sizes of 2, 1.5 and 1 mm were ball bonded on the LED chip bond pad via thermosonic wire bonding method to produce three different ball bond diameters, that is, 140, 120 and 100 μm, respectively. The reliability of these wire bond samples was then studied by performing isothermal aging at 200°C for the time interval of 30, 100 and 500 hours. To validate hypotheses based on the experimental data, COMSOL Multiphysics simulation was also applied to study the thermal stress distribution of wire bond under an elevated temperature.

Experimental results show that the interfacial adhesion of wire bond degrades significantly after aging at 200°C for 500 hours, and the rate of interfacial degradation was found to be more rapid in the wire bond with smaller ball bond diameter. Experimental results also show that ball bonds randomly elongate along an axis and deforms into elliptical shapes after isothermal aging, and ball bonds with smaller diameters develop more obvious elongations. This observation has not been reported in any previous studies. Simulation results show that higher thermal stress is induced in the wire bond with the decrease of ball bond diameter.

The reliability study of this paper provides measurements and explanation on the effects of wire diameter downsizing in wire bonds for automotive application. This is applicable as a reliability reference for industries who intend to reduce their production costs. Other than that, the analysis method of thermal stresses using COMSOL Multiphysics simulations can be extended by other COMSOL Multiphysics users in the future.

To resolve “lifted ball bond” issue, optimization of the bond pad surface quality and the wire bond parameter has been studied and reported in many studies, but the influence of ball bond diameter on wire bond reliability is rarely focused. Moreover, the observation of ball bonds randomly elongate and deform more into elliptical shape, and ball bond with smaller diameter has the highest elongation after isothermal aging also still has not been reported in any previous studies.

The purpose of this paper is to review recent advances in fine and ultra‐fine pitch wire bonding.

Dozens of journal and conference articles published recently are reviewed.

The problems/challenges such as possible wire sweep and decreased bonding strength due to small wire sizes, non‐sticking, metal pad peeling, narrow process windows, wire open and short tail defects are analysed. The solutions to the problems and recent findings/developments in fine and ultra‐fine pitch wire bonding are discussed.

Because of the page limitation, only brief discussions are given in this paper. Further reading is needed for more details.

This paper attempts to provide an introduction to recent developments and the trends in fine and ultra‐fine pitch wire bonding. With the references provided, readers may explore more deeply by reading the original articles.

The dramatic expansion in the use and capability of electronic devices in recent years has been facilitated by the substantial development of production techniques. Modern electronic circuits as used in the computer, defence, aerospace, vehicle and domestic appliance industries contain a great many joints and these have to be made reliably and economically without degrading sensitive circuit components. This article describes the major microjoining developments currently of interest to the microelectronics industry, with emphasis on the work conducted by the microjoining section of The Welding Institute, much of which has been directly sponsored by the UK Ministry of Defence (DCVD).

This paper attempts to review recent advances in wire bonding using copper wire.

Dozens of journal and conference articles published recently are reviewed.

The problems/challenges such as wire open and short tail defects, poor bondability for stitch/wedge bonds, oxidation of Cu wire, strain‐hardening effects, and stiff wire on weak support structures are briefly analysed. The solutions to the problems and recent findings/developments in wire bonding using copper wire are discussed.

Because of page limitation of the paper, only a brief review is conducted. Further reading is needed for more details.

This paper attempts to provide introduction to recent developments and the trends in wire bonding using copper wire. With the references provided, readers may explore more deeply by reading the original articles.

This paper is aimed at Engineers involved in production wire‐bonding processes and system maintenance. It traces the development of microbonding from its origins to the present day. Principles and techniques are examined and some approaches to fault diagnosis are explored.