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The purpose of this paper is to attempt to study the failure mechanism of BGA (ball grid array) Cu wire bond ball lift and specifically focused on substrate outgassing’s impact on Cu wire bonding quality and reliability.

The Galvanic corrosion theory has been widely adopted in explaining the failure mechanism of Cu ball bond lift issue during reliability test or field application in the presence of moisture. In this study, ion chromatography was performed on BGA substrate halogen analysis. EDX (energy-dispersive X-ray spectroscopy) was also used to detect the contaminant’s element at the bottom surface of a window clamp. Further FTIR (Fourier transform infrared spectroscopy) analysis verified that the contamination is from substrate outgassing during wire bonding. A new window clamp design proved effective in reducing the negative impact from substrate outgassing during wire bonding.

The solder mask in a fresh substrate contains a chlorine element. The chlorine can be detected in the BGA substrate outgassing during wire bonding by FTIR and EDX analyses, which have a negative impact on the Cu wire bonding. The window clamp with a larger opening can reduce the negative impact of the Cu wire bonding from the BGA substrate outgassing.

Because of the limitation of time and resources, bonding pad surface contamination from substrate outgassing and its correlation with Cu bonding ball lift failure after reliability test will be studied in depth later.

The BGA substrate outgassing has negative impacts on Cu wire bondability. A window clamp with a larger opening can reduce the negative impact from substrate outgassing.

This paper attempts to review recent advances in wire bonding using copper wire.

Dozens of journal and conference articles published recently are reviewed.

The problems/challenges such as wire open and short tail defects, poor bondability for stitch/wedge bonds, oxidation of Cu wire, strain‐hardening effects, and stiff wire on weak support structures are briefly analysed. The solutions to the problems and recent findings/developments in wire bonding using copper wire are discussed.

Because of page limitation of the paper, only a brief review is conducted. Further reading is needed for more details.

This paper attempts to provide introduction to recent developments and the trends in wire bonding using copper wire. With the references provided, readers may explore more deeply by reading the original articles.

The purpose of this paper is to provide a systematic review on technical findings and discuss the feasibility and future of gold (Au) wirebonding in microelectronics packaging. It also aims to study and compare the cost, quality and wear-out reliability performance of Au wirebonding with respect to other wire alloys such as copper (Cu) and silver (Ag) wirebonding. This paper discusses the influence of wire type on the long-term reliability tests.

Literature reviews are conducted based on cost and wire selections of Au, Cu or Ag wirebonding. Detailed wear-out failure findings and wire selection with cost considerations are presented in this review paper. The future and the status of Au wirebonding in microelectronics packaging are discussed in this paper.

This paper briefly reviews selected aspects of the Au ball and other alternative bonding options, focusing on reliability performance, and discusses the future of Au wirebonding in the near future in semiconductor packaging.

The paper reveals the technical considerations when choosing the wire types for future microelectronics packaging.

The in-depth technical review and strategies of the selection of wire types (Au, Cu or the latest Ag alloy) in microelectronics packaging are discussed in this paper based on previous literature studies.

The purpose of this paper is to review recent advances in wire bonding of low‐k devices.

Dozens of journal and conference articles published in 2005‐2008 are reviewed.

The paper finds that many articles have discussed and analysed problems/challenges such as bond pad metal peeling/lift, non‐sticking on pad, decreased bonding strength and lower wire‐bond assembly yield. The paper discusses the articles' solutions to the problems and recent findings/developments in wire bonding of low‐k devices.

Because of the page limitation, only brief discussions are given in this paper. Further reading is needed for more details.

The paper attempts to provide an introduction to recent developments and the trends in wire bonding of low‐k devices. With the references provided, readers may explore more deeply by reading the original articles.

In this study a multilayer hybrid circuit for high frequency digital systems using Cu conductors was fabricated. The available Cu pastes were evaluated in terms of their applicability and a complex multilayer interconnection circuit was realised and optimised using both the DuPont and Heraeus Cu thick film systems. Also, AI‐1% Si wedge bonding on Cu thick film was investigated. The pull strengths were measured before and after ageing (high temperature storage). Results indicate that Al wire bonding on Cu is technologically feasible and gives no reliability problems.

A Cu‐Al bonding system exists when copper wire is bonded onto an aluminum bond pad using thermosonic wire bonding technology. Aged Cu‐Al bonding system was analyzed by measuring the intermetallics layer thickness and its correlation to electrical contact resistance. Result shows that the thickness of Cu‐Al intermetallics layer grows almost linearly to aging time. The activation energy needed for Cu atoms to diffuse into Al was calculated using Fick's law; Q=129.66 kJ/mole and D₀=1.628×10⁻⁴ m²/s. The calculation of activation energy and impurity diffusity using Model Kidson also shows linear relationship. Electrical resistance of Cu‐Al intermetallics layer was calculated from contact resistance of Cu‐Al bonding system. The result shows that the electrical resistance of Cu‐Al intermetallics layer increases linearly with intermetallics thickness. Its growth rate that was calculated using Model of Braunovic and Alexandrov is double of Model of Murcko.

Lead frame tape is a crucial support for lead frames in the IC assembly process. The tape residue on the quad flat non-leaded (QFN) could result in low reliability and failure in electrical conductivity tests. The tape residue would affect overall performance of the chips and contribute to low pass yield. The purpose of this paper is to present an in-depth study of tape residue and factors that may affect it.

An experiment using lead frame and tapes from three manufacturers with two types of die bond adhesives, namely, die attach film (DAF) and wafer back coating (WBC), was conducted. Copper (Cu) wire bonding and die bonding performances were measured in terms of process capability, stitch bond strength and die attach strength.

Results showed that no tape residue was observed on the thermoplastic adhesive-based lead frames manufactured by Hitachi after the de-taping process because of the tape’s thermoplastic adhesive properties.

This paper studies the occurrence of tape residue and a viable solution for it through the correct process optimization and combination of semiconductor manufacturing materials. Factors that may affect tape residue have also been studied and further research can be done to explore other options in the future as an alternate solution.

This paper attempts to review recent advances in wire bonding using insulated wire and new challenges in wire bonding for advanced microelectronics packaging.

Dozens of journal articles, conference articles and patents published or issued in 2004‐2007 are reviewed.

The advantages and problems/challenges related to wire bonding using insulated wire are briefly analysed, and several solutions to the problems and recent findings/developments related to wire bonding using insulated wire are discussed.

Because of page limitation of the paper, only brief review is conducted. Further reading is needed for more details.

This paper attempts to provide introduction to recent developments and the trends in wire bonding using insulated wire. With the references provided, readers may explore more deeply by reading the original articles and patent documents.

The purpose of this paper is to review recent advances in fine and ultra‐fine pitch wire bonding.

Dozens of journal and conference articles published recently are reviewed.

The problems/challenges such as possible wire sweep and decreased bonding strength due to small wire sizes, non‐sticking, metal pad peeling, narrow process windows, wire open and short tail defects are analysed. The solutions to the problems and recent findings/developments in fine and ultra‐fine pitch wire bonding are discussed.

Because of the page limitation, only brief discussions are given in this paper. Further reading is needed for more details.

This paper attempts to provide an introduction to recent developments and the trends in fine and ultra‐fine pitch wire bonding. With the references provided, readers may explore more deeply by reading the original articles.

This paper aims to analyze the effect of surface roughness and hardness of leadframe on the bondability of gold (Au) wedge bond using in situ inspection of laser interferometer and its relationship with the deformation and wire pull strength.

The in situ inspection of ultrasonic vibration waveform through the changes of vertical axis (y-axis) amplitude of wire bonder capillary was carried out using laser interferometer to analyze the formation of Au wedge bond. The relationship between the changes of ultrasonic waveform of capillary with the deformation and the pull strength was analyzed to evaluate the bondability of Au wedge bonds.

It was observed that the changes in vertical axis amplitude of ultrasonic vibration waveform of wire bonder capillary can be used to describe the process of bonding formation. The loss of ultrasonic energy was exhibited in ultrasonic vibration waveform of wire bonding on leadframe that has higher value of roughness (leadframe A) as compared to that of leadframe that has lower value of roughness (leadframe B). The lower pull strength obtained by Au wedge bond further confirms the reduction of bond formation because of the higher deformation on leadframe A as compared to that of leadframe B.

The relationship between in situ measurement using laser interferometer with the bondability or deformation and wire pull strength of Au wedge bonds on different surface roughness and hardness of leadframes is still lacking. These findings provide a valuable data in analyzing the bonding mechanisms that can be identified based on the in situ measurement of ultrasonic vibration and the bondability of Au wedge bonds.