The quality of GeOx–Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al2O3 on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al2O3 and Ge for HCl- and HF-last Ge surface.
After wet chemical cleaning with HCl or HF, Al2O3 was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively.
It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF- and HCl-last starting surface.
The novelty of this work is to investigate the starting surface of Ge to IL growth between Al2O3/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.
The authors would like to acknowledge the Ministry of Education and Universiti Malaysia Sarawak for supporting this work under FRGS/TK04(02)/1082/2013(28).
Sahari, S.K., Kashif, M., Mohamed Sutan, N., Embong, Z., Nik Zaini Fathi, N.A.F., Hamzah, A.A., Sapawi, R., Yeop Majlis, B. and Ahmad, I. (2017), "Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium", Microelectronics International, Vol. 34 No. 2, pp. 64-68. https://doi.org/10.1108/MI-12-2015-0099
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