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A review of the dielectric measurement techniques that are currently available for the characterization of thick film and LTCC materials at microwave and millimeter wave frequencies is presented. The intention is to show the relative advantages and limitations of the various methods, and to provide some practical guide to the particular technique that is most suitable for a given type of material, for use in a particular application. In addition, a novel slit cavity resonator method is proposed to enable substrate parameters to be more easily measured, whilst retaining high measurement accuracy. Measured data on materials from a variety of manufacturers are presented to show the validity and usefulness of this method.

The trend in wireless and mobile communications for broader bandwidth microwave circuitry, coupled with high packaging density and low cost fabrication has triggered investigations of new circuit configurations and technologies that meet these requirements. We have addressed these issues through the study of multilayer microwave structures using advanced thick‐film technology. The techniques described employ several layers of metal sandwiched by thick‐film dielectric. This leads to an efficient solution for system miniaturisation. The significance of this work is that it shows the multilayer approach to microwave structures, coupled with new thick‐film technology, offers a viable and economic solution to achieve high‐density, high‐performance microwave circuits.

In this paper we present new measured loss tangent data for commercially available substrates, and these data are supported by simulations that show how practical variations in loss tangent affect the performance of microwave interconnections and devices. The paper reviews the measurement techniques that are currently available to measure the dielectric constant and loss tangent of substrate materials, and includes a new variation on an existing method that enables substrate parameters to be more easily measured but retains high accuracy. Simulations have been performed on microstrip lines fabricated on 10mil thick substrates using gold conductors to show the relative contributions of conductor and dielectric loss to the total line loss over the frequency range 0‐40GHz. Included in these simulations are the effects of conductor surface roughness. The simulated data are related to measured line microstrip line loss data over the frequency range 50MHz‐40GHz. The measured values, for an etched gold line on alumina, vary from 0.0045dB/mm at 50MHz to 0.04dB/mm at 40GHz.

This paper aims to investigate the high-temperature mechanical properties of HS110S steel and its corrosion behaviors in harsh downhole environment.

In this work, mechanical property measurements were carried out from 25°C to 350°C and the scanning electron microscopy was used to observe the fracture morphology. The weight-loss measurements and surface characterization were used to evaluate the corrosion resistance of HS110S steel in harsh downhole environment.

Results show that the yield strength and tensile strength of HS110S steel at 350 °C are 779 and 861 MPa, respectively. Compared with room temperature, the reduction rate values are both less than 20%. At the high-temperature corrosion environment (350 °C), the static and dynamic corrosion rates are 0.9668 and 1.9236 mm/a, respectively. The generated corrosion products are mainly composed of FeSx, FeCO₃ and Fe₃O₄. Therefore, the HS110S steel applied under such conditions needs to take suitable protective measures.

In general, the HS110 steel has widely used in conventional development conditions (e.g. low H₂S or high CO₂ environments). However, to the best of the authors’ knowledge, no studies have reported on its application at more than 250°C. Therefore, this work can be a reference to the application of HS110S steel in high-temperature corrosion conditions.

The purpose of this paper is to examine the different strategies implemented by a number of successful Chinese firms currently striving to build global brands in order to improve their export capabilities. A particular emphasis is put on the transfer of marketing technology for brand engineering in order to achieve this goal.

The analysis uses case study methodology to understand what many prominent Chinese exporting firms have achieved, and develops a theory about their general strategy. Five firms have been chosen: Lenovo, Haier, Cosco, Tsingtao, Geely. Aside from these five, information is also given on the branding strategy of Li Ning and Suntech Power. A great part of the information collected is coming from “desk research”, except for Haier, Lenovo and Tsingtao for which personal contacts and visits took place in 2005 and 2006.

The findings suggest that some of the most successful Chinese firms in the field of development of brand image either use some marketing tools, such as increasing their communication spending, improving quality control, emphasizing their corporate social responsibility visibility, or by seeking a partnership through mergers/acquisition with successful foreign brands. A basic global branding model has been defined as consistent with Chinese firms’ experience.

The study was limited to seven firms to be considered among the most successful Chinese businesses. It does not intend to be perceived as statistically representative. The period of observation of the effect of the strategy which was implemented was short and during a time of booming Chinese economy. It was impossible to isolate the extraneous variables linked to the economic or competitive situation, knowing that they could affect the observations on the firms that were studied.

Though the entry strategies on the Chinese market as well as inbound foreign direct investments have been the object of a great number of publications, the outbound strategies of Chinese exporting firms, as well as the impact of technology transfer, has been covered less frequently. Therefore, this paper can have value for candidates for the improvement of global branding.