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A real-time production scheduling method for semiconductor back-end manufacturing process becomes increasingly important in industry 4.0. Semiconductor back-end manufacturing process is always accompanied by order splitting and merging; besides, in each stage of the process, there are always multiple machine groups that have different production capabilities and capacities. This paper studies a multi-agent based scheduling architecture for the radio frequency identification (RFID)-enabled semiconductor back-end shopfloor, which integrates not only manufacturing resources but also human factors.

The architecture includes a task management (TM) agent, a staff instruction (SI) agent, a task scheduling (TS) agent, an information management center (IMC), machine group (MG) agent and a production monitoring (PM) agent. Then, based on the architecture, the authors developed a scheduling method consisting of capability & capacity planning and machine configuration modules in the TS agent.

The authors used greedy policy to assign each order to the appropriate machine groups based on the real-time utilization ration of each MG in the capability & capacity (C&C) planning module, and used a partial swarm optimization (PSO) algorithm to schedule each splitting job to the identified machine based on the C&C planning results. At last, we conducted a case study to demonstrate the proposed multi-agent based real-time production scheduling models and methods.

This paper proposes a multi-agent based real-time scheduling framework for semiconductor back-end industry. A C&C planning and a machine configuration algorithm are developed, respectively. The paper provides a feasible solution for semiconductor back-end manufacturing process to realize real-time scheduling.

This study aims to review the recent advancements in high entropy alloys (HEAs) called high entropy materials, including high entropy superalloys which are current potential alternatives to nickel superalloys for gas turbine applications. Understandings of the laser surface modification techniques of the HEA are discussed whilst future recommendations and remedies to manufacturing challenges via laser are outlined.

Materials used for high-pressure gas turbine engine applications must be able to withstand severe environmentally induced degradation, mechanical, thermal loads and general extreme conditions caused by hot corrosive gases, high-temperature oxidation and stress. Over the years, Nickel-based superalloys with elevated temperature rupture and creep resistance, excellent lifetime expectancy and solution strengthening L12 and γ´ precipitate used for turbine engine applications. However, the superalloy’s density, low creep strength, poor thermal conductivity, difficulty in machining and low fatigue resistance demands the innovation of new advanced materials.

HEAs is one of the most frequently investigated advanced materials, attributed to their configurational complexity and properties reported to exceed conventional materials. Thus, owing to their characteristic feature of the high entropy effect, several other materials have emerged to become potential solutions for several functional and structural applications in the aerospace industry. In a previous study, research contributions show that defects are associated with conventional manufacturing processes of HEAs; therefore, this study investigates new advances in the laser-based manufacturing and surface modification techniques of HEA.

The AlxCoCrCuFeNi HEA system, particularly the Al0.5CoCrCuFeNi HEA has been extensively studied, attributed to its mechanical and physical properties exceeding that of pure metals for aerospace turbine engine applications and the advances in the fabrication and surface modification processes of the alloy was outlined to show the latest developments focusing only on laser-based manufacturing processing due to its many advantages.

It is evident that high entropy materials are a potential innovative alternative to conventional superalloys for turbine engine applications via laser additive manufacturing.

Bumpless Cu/SiO₂ hybrid bonding, which this paper aims to, is a key technology of three-dimensional (3D) high-density integration to promote the integrated circuits industry’s continuous development, which achieves the stacks of chips vertically connected via through-silicon via. Surface-activated bonding (SAB) and thermal-compression bonding (TCB) are used, but both have some shortcomings. The SAB method is overdemanding in the bonding environment, and the TCB method requires a high temperature to remove copper oxide from surfaces, which increases the thermal budget and grossly damages the fine-pitch device.

In this review, methods to prevent and remove copper oxidation in the whole bonding process for a lower bonding temperature, such as wet treatment, plasma surface activation, nanotwinned copper and the metal passivation layer, are investigated.

The cooperative bonding method combining wet treatment and plasma activation shows outstanding technological superiority without the high cost and additional necessity of copper passivation in manufacture. Cu/SiO₂ hybrid bonding has great potential to effectively enhance the integration density in future 3D packaging for artificial intelligence, the internet of things and other high-density chips.

To achieve heterogeneous bonding at a lower temperature, the SAB method, chemical treatment and the plasma-assisted bonding method (based on TCB) are used, and surface-enhanced measurements such as nanotwinned copper and the metal passivation layer are also applied to prevent surface copper oxide.