COMPEL - The international journal for computation and mathematics in electrical and electronic engineering: Volume 13 Issue 4
Table of contents
AN ENERGY TRANSPORT MODEL FOR HBTS USING ENERGY‐ AND COMPOSITION‐DEPENDENT TRANSPORT PARAMETERS
Kazushige Horio, Akio NakataniIn this paper, we describe an energy transport simulation method for graded AlGaAs/GaAs HBTs, which uses Al composition‐, doping density‐, and energy‐dependent transport…
ACCURACY OF MODELLING NON‐EQUILIBRIUM ELECTRON TRANSPORT IN SILICON USING HYDRODYNAMIC TRANSPORT EQUATIONS
Ming‐C. Cheng, Ying WenAccuracy of hydrodynamic transport equations using the energy‐dependent relaxation times has been studied for electron transport in Si 〈100〉. The concept of the hydro‐kinetic…
A NECESSARY CONDITION ON DISCRETIZATION SCHEMES FOR DEVICE SIMULATION
F. MONTRONE, R. BULIRSCHThis paper contributes to the evaluation of discretization schemes for the semiconductor device continuity equation. A simple model problem is described which provides a test any…
A NEW APPROACH OF THE BOX METHOD ADAPTED TO ANY CONVEX POLYGONAL MESH
S. Mottet, P.F. VermeulenThe main discretisation methods used today for semiconductor device simulations are finite elements, finite differences and the box method. Each of them has disadvantages. We…
MIXED FINITE ELEMENT APPROACH AND NONLINEAR IMPLICIT SCHEMES FOR DRIFT‐DIFFUSION EQUATION SOLUTION OF 2D HETEROJUNCTION SEMICONDUCTOR DEVICES
A. EL Doukili, A. MarroccoWe present an abstract mathematical and numerical analysis for Drift‐Diffusion equation of heterojunction semiconductor devices with Fermi‐Dirac statistic. For the approximation…
THERMALLY INDUCED FAILURE IN GaAs TRANSISTORS EXPOSED TO α PARTICLE IRRADIATION
C. Moglestue, F. Buot, W.T. AndersonThe response of a MESFET and an inverted HEMT to the impact of an a particle has been calculated by means of the Monte Carlo Particle Model, a technique for solving Boltzmann's…
MONTE CARLO MODELLING OF 0.1µm DELTA‐DOPED MOSFETs
R.W. Kelsall, A.G. O'NeillA 2‐dimensional multilayer MOSFET simulator has been developed, based on self‐consistently coupled ensemble Monte Carlo and Finite Element Poisson Solver algorithms. The simulator…
A GENERALIZED SELF‐SCATTERING TECHNIQUE FOR MONTE CARLO SIMULATION SUITABLE FOR SIMD ARCHITECTURES
Henry Sheng, Roberto Guerrieri, Alberto Sangiovanni‐VincentelliWe present a generalized self‐scattering method for generating carrier free flight times in Monte Carlo simulation. Compared to traditional approaches, the added flexibility of…
A NUMERICAL MODEL OF HETEROJUNCTION BIPOLAR TRANSISTOR HIGH FREQUENCY PERFORMANCE FOR DEVICE DESIGN
G. Khrenov, V. Ryzhii, S. KartashovAn efficient numerical model of heterojunction bipolar transistor high frequency performance is proposed. The developed model is based on the ensemble Monte Carlo particle…
ETCH PROFILE EVOLUTION IN LOW PRESSURE RF PLASMA WITH AXIAL MAGNETIC FIELD
B.P. Mathur, K.I. Arshak, D. Mc Donagh, A. ArshakThe dry development of a photoresist is modelled using the analytical solution of the Boltzmann equation. It is proposed that at very low pressure and in the presence of a…
AN EFFICIENT RESPONSE SURFACE TECHNIQUE FOR INVESTIGATING CMOS PROCESS RELATED EFFECTS ON CIRCUIT ELECTRICAL PERFORMANCE
A.E. Theron, M. Du PlessisThe ability to simulate the effects of process technology on final product circuits has become virtually indispensable in modern VLSI production. It is especially significant as a…
TWO‐CARRIER QUANTUM WELL TRANSPORT MODEL WITH APPLICATION TO SEMICONDUCTOR OPTICAL AMPLIFIERS
J.L. Pleumeekers, T. Mercier, F. Clérot, S. MottetFor the design and optimisation of modern quantum well based opto‐electronic devices, a numerical simulator is required. This paper describes such a simulator. It includes the…
THE INCLUSION OF A FINITE CAPTURE TIME IN NUMERICAL DEVICE SIMULATION
M. Gault, H. Matsuura, K. Furuya, P. Mawby, M.S. TowersA new quantum effect device which is capable of highly coherent electron emission is theoretically proposed and analysed. The new device works by using the potential induced…
DETERMINISTIC PARTICLE SIMULATION OF MULTIHETEROJUNCTION SEMICONDUCTOR DEVICES: THE SEMICLASSICAL AND QUANTUM CASES
E. Cebrián, F.J. MustielesThe progress of semiconductor fabrication technology, particularly the heteroepitaxial technology (MOCVD, MBE, etc.) has permitted the fabrication of structures and devices whose…
THERMOMAGNETIC ANALYSIS OF SEMICONDUCTOR DEVICES USING TRENDY
G. Dima, B. Krabbenborg, T. Mouthaan, Profirescu, H. WallingaThis paper describes the two‐dimensional numerical solution of the system of partial differential equations governing the carrier and heat transport in a semiconductor structure…
THERMO‐ELECTRIC STUDY OF THE TRENCH‐GATE POWER VDMOS TRANSISTOR
J. Zeng, P.A. Mawby, M.S. Towers, K. BoardIn this paper, the 2‐D numerical analysis is used to investigate the electro‐thermal performance of a trench power VDMOS transistor having a much reduced quasi‐saturation effect…
SIMULATION OF TRANSIENT SELF‐HEATING DURING POWER VDMOS TRANSISTOR TURN‐OFF
Z.R. Hu, P.A. Mawby, M.S. Towers, K. BoardThe transient thermal behaviour, based on a rigorous transient thermodynamic treatment, of a power VDMOS transistor during turn‐off is presented. The time variation of the…
MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS
F. Hecht, A. MarroccoSome results related to the algorithmic behaviour in semiconductor devices numerical simulations (‐static case‐), using mixed finite elements and operator splitting techniques…
POWER 2D: A DEDICATED TOOL FOR TWO‐DIMENSIONAL SIMULATIONS OF OFF‐STATE POWER STRUCTURES
Nicolas NOLHIER, Evgeny STEFANOV, Georges CHARITAT, Pierre ROSSELModelling and designing modern power devices is more and more often performed with two dimensional numerical simulation of basic semiconductor equations. Well‐known simulators…
COMPARISON OF COUPLED AND DECOUPLED METHODS FOR SEMICONDUCTOR DEVICE MODELING
M.S. Obrecht, E.L. Heasell, M.I. ElmasryComputational speed and robustness of the coupled (MEDICI) and decoupled (TRASIM) method based simulators are compared. Transient and steady‐state avalanche simulations are…
EFFICIENT TRANSIENT SIMULATION OF DISTRIBUTED INTERCONNECTS
Jose E. Schutt‐Aine, Dmitri KuznetsovThe electrical performance of high‐speed integrated circuits and digital networks strongly depends on the behavior of interconnects between various components of these systems…
TEMPERATURE DEPENDENT NOISY MODELS OF PSEUDOMORPHIC HEMTs
A. Caddemi, M. Sannino, G. MogaveroFrom a complete characterization in terms of noise and scattering parameters carried out at room temperature in the 8–16 GHz frequency range, the noisy small‐signal model of a…
UNIFIED SIMULATION MODEL FOR JUNCTION‐CONTROLLED FIELD‐EFFECT TRANSISTRORS
Frank Schwierz, Valentin Nakov, Matthias RoßbergAn simple model for the simulation of the electrical behaviour of several types of junction controlled field‐effect transistors is proposed. It is based on the calculation of the…
A NON QUASI‐STATIC EMPIRICAL MODEL OF THE POWER PIN DIODE FOR CIRCUIT SIMULATION
Margaret E Clarke, Suhail RahimModels of power semiconductor devices for use in circuit simulators need to take account of effects which can be neglected in low power device models; they then become very…
NUMERICAL ANALYSIS OF TRANSIENT TEMPERATURE DISTRIBUTIONS DURING LASER SOLDERING
J. Nicolics, G. HoblerFast laser soldering processes are very attractive for the production of miniaturized interconnections with high reliability as they allow solder joint quality assurance during…
EFFICIENT SIMULATION OF 3‐D STRESS DISTRIBUTIONS AT TRENCH STRUCTURES CAUSED BY THERMAL MISMATCH OF TRENCH FILLING AND SILICON SUBSTRATE
R. Slehobr, G. HoblerAn efficient method for the calculation of 3‐D stress distributions at embedded structures in silicon caused by different thermal expansion coefficients between silicon and…
TOPOGRAPHY SIMULATION IN PHOTOLITHOGRAPHY USING FINITE ELEMENT ANALYSIS AND A MODIFIED STRING ALGORITHM
K.I. Arshak, D. McDonagh, B.P. Mathur, A. ArshakIn this paper, simulation of topography effects in photolithography is examined using the two‐dimensional PC based simulator called SLITS (Simulation of Lithography on Topographic…
NUMERICAL MODELLING OF A NOVEL TWIN‐RIDGE WAVEGUIDE OPTICAL AMPLIFIER
L Sabesan, AK Ray, P Mawby, M TowersModelling of a Twin ridge waveguide optical Amplifier is reported here. In this paper appropriate physical mechanism such as current spreading, carrier diffusion, waveguiding and…
NUMERICAL INVESTIGATION OF CARRIER TRANSPORT IN DOUBLE HETEROSTRUCTURE: AlGaAs/GaAs PNPN Bistable Device
Hamid Z. FardiNumerical device simulation is developed to study the steady‐state and transient current‐voltage characteristics of double heterostructure AlGaAs/GaAs PNPN electro‐photonic device…
ISSN:
0332-1649Online date, start – end:
1982Copyright Holder:
Emerald Publishing LimitedOpen Access:
hybridEditor:
- Prof Jan Sykulski