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THE INCLUSION OF A FINITE CAPTURE TIME IN NUMERICAL DEVICE SIMULATION

M. Gault (Department of Physical Electronics Tokyo Institute Of Technology O‐okayama 2–12–1 Meguro‐Ku Tokyo Japan)
H. Matsuura (Department of Physical Electronics Tokyo Institute Of Technology O‐okayama 2–12–1 Meguro‐Ku Tokyo Japan)
K. Furuya (Department of Physical Electronics Tokyo Institute Of Technology O‐okayama 2–12–1 Meguro‐Ku Tokyo Japan)
P. Mawby (Department of Electronic Engineering University of Wales, Swansea, U.K.)
M.S. Towers (Department of Physical Electronics Tokyo Institute Of Technology O‐okayama 2–12–1 Meguro‐Ku Tokyo Japan)

Abstract

A new quantum effect device which is capable of highly coherent electron emission is theoretically proposed and analysed. The new device works by using the potential induced accumulation layer at a heterointerface to produce dimensionally reduced electrons. These electrons tunnel through a heterobarrier ensuring that their energy is quantised in the direction of propagation. To avoid the problem of unquantised three dimensional electrons dominating the current the two dimensional electrons that tunnel through the barrier are replenished by electrons from two side contacts. A self‐consistent model is used to analyse the performance of the device and it is found that the new device performs very well, producing electrons with a very narrow energy spread in the direction of propagation. The current density/coherency combination is easily controlled by the applied bias and the device also offers the potential for ultra fast switching through the transition between coherent and incoherent states.

Citation

Gault, M., Matsuura, H., Furuya, K., Mawby, P. and Towers, M.S. (1994), "THE INCLUSION OF A FINITE CAPTURE TIME IN NUMERICAL DEVICE SIMULATION", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 13 No. 4, pp. 703-716. https://doi.org/10.1108/eb051888

Publisher

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MCB UP Ltd

Copyright © 1994, MCB UP Limited

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