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ETCH PROFILE EVOLUTION IN LOW PRESSURE RF PLASMA WITH AXIAL MAGNETIC FIELD

B.P. Mathur (Microelectronic & Semiconductor Research Group, Department of Electronic & Computer Engineering, University of Limerick, Ireland)
K.I. Arshak (Microelectronic & Semiconductor Research Group, Department of Electronic & Computer Engineering, University of Limerick, Ireland)
D. Mc Donagh (Microelectronic & Semiconductor Research Group, Department of Electronic & Computer Engineering, University of Limerick, Ireland)
A. Arshak (Microelectronic & Semiconductor Research Group, Department of Electronic & Computer Engineering, University of Limerick, Ireland)

COMPEL - The international journal for computation and mathematics in electrical and electronic engineering

ISSN: 0332-1649

Article publication date: 1 April 1994

40

Abstract

The dry development of a photoresist is modelled using the analytical solution of the Boltzmann equation. It is proposed that at very low pressure and in the presence of a magnetic field, the etch rate of the resist can be calculated by integrating the ion flux. The simulation results illustrates improvement in both microuniformity and macrouniformity when the resist is etched under these process conditions.

Citation

Mathur, B.P., Arshak, K.I., Mc Donagh, D. and Arshak, A. (1994), "ETCH PROFILE EVOLUTION IN LOW PRESSURE RF PLASMA WITH AXIAL MAGNETIC FIELD", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 13 No. 4, pp. 677-684. https://doi.org/10.1108/eb051885

Publisher

:

MCB UP Ltd

Copyright © 1994, MCB UP Limited

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