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This study aims to investigate photosensing characteristics of SiC and GaN nanowire-based devices through exposure to UV light. The photocurrent transients have been modeled to determine rise and decay process time constants. The 1D-semiconductor nanowires can exhibit higher light sensitivity compared to bulk materials because of their large surface area to volume ratio and the quantum size effects.

Nanowire devices have been fabricated through dielectrophoresis for integrating nanowires onto pre-patterned electrodes (10 nm Ti/ 90 nm Au) with a spacing about 3 µm onto SiO₂/Si (doped) substrate. The photocurrent measurements were carried out under room temperature conditions with UV light of 254 nm wavelength.

SiCNWs yield very short rise and decay time constants of 1.3 and 2.35 s, respectively. This fast response indicates an enhanced surface recombination of photoexcited electron-hole pairs. Conversely, GaNNWs yield longer rise and decay time constants of 10.3 and 15.4 s, respectively. This persistent photocurrent suggests a reduced surface recombination process for the GaNNWs.

High selective UV light sensitivity, small size, very short response time, low power consumption and high efficiency are the most important features of nanowire-based devices for new and superior applications in photodetectors, photovoltaics, optical switches, image sensors and biological and chemical sensing.

The purpose of this study is to present a systematic investigation of the effect of high temperatures on transport characteristics of nitrogen-doped silicon carbide nanowire-based field-effect transistor (SiC-NWFET). The 3C-SiC nanowires can endure high-temperature environments due to their wide bandgap, high thermal conductivity and outstanding physical and chemical properties.

The metal-organic chemical vapor deposition process was used to synthesize in-situ nitrogen-doped SiC nanowires on SiO₂/Si substrate. To fabricate the proposed SiC-NWFET device, the dielectrophoresis method was used to integrate the grown nanowires on the surface of pre-patterned electrodes onto the SiO₂ layer on a highly doped Si substrate. The transport properties of the fabricated device were evaluated at various temperatures ranging from 25°C to 350°C.

The SiC-NWFET device demonstrated an increase in conductance (from 0.43 mS to 1.2 mS) after applying a temperature of 150°C, and then a decrease in conductance (from 1.2 mS to 0.3 mS) with increasing the temperature to 350°C. The increase in conductance can be attributed to the thermionic emission and tunneling mechanisms, while the decrease can be attributed to the phonon scattering. Additionally, the device revealed high electron and hole mobilities, as well as very low resistivity values at both room temperature and high temperatures.

High-temperature transport properties (above 300°C) of 3C-SiC nanowires have not been reported yet. The SiC-NWFET demonstrates a high transconductance, high electron and hole mobilities, very low resistivity, as well as good stability at high temperatures. Therefore, this study could offer solutions not only for high-power but also for low-power circuit and sensing applications in high-temperature environments (∼350°C).

With the acceleration of global energy structure transformation, hydrogen has been widely used for its non-pollution and high efficiency, and hydrogen detection is used to guarantee the hydrogen safety. The purpose of this paper is to study the research foundation, trend and hotspots of hydrogen detection field.

A total of 4,076 literature records from 2000 to 2021 were retrieved from the core collection of the Web of Science database selected as data sources. The literature information mining was realized by using CiteSpace software. Bibliometrics was used to analyze information, such as keywords, authors, journals, institutions, countries and cited references, and to track research hotspots.

Since the 21st century, the number of publications in the hydrogen detection field has been in a stable stepped uptrend. In terms of research foundation, the hotspots such as core-shell structures, nano-hybrid materials and optical fiber hydrogen sensors have been studied extensively. In combination with the discipline structure and research frontier, the selectivity, sensitivity, response speed and other performance parameters of hydrogen sensors need further improvement. The establishment of an interdisciplinary knowledge system centered on materials science and electronic science will become a long-term trend in the research of hydrogen detection.

This study presents an overview of research status, hotspots and laws in hydrogen detection field, through the quantitative analysis of much literature in the field and the use of data mining, so as to provide credible references for the research of hydrogen detection technology.

This study aims to explore the applicability of the sol-gel-derived GaN thin films for UV photodetection.

GaN-based ultraviolet (UV) photodetector with Pt Schottky contacts was fabricated and its applicability was investigated. The current-voltage (I-V) characteristics of the GaN-based UV photodetector under the dark current and photocurrent were measured.

The ideality factors of GaN-based UV photodetector under dark current and photocurrent were 6.93 and 5.62, respectively. While the Schottky barrier heights (SBH) for GaN-based UV photodetector under dark current and photocurrent were 0.35 eV and 0.34 eV, respectively. The contrast ratio and responsivity of this UV photodetector measured at 5 V were found to be 1.36 and 1.68 μA/W, respectively. The photoresponse as a function of time was measured by switching the UV light on and off continuously at different forward biases of 1, 3 and 6 V. The results showed that the fabricated UV photodetector has reasonable stability and repeatability.

This work demonstrated that GaN-based UV photodetector can be fabricated by using the GaN thin film grown by low-cost and simple sol-gel spin coating method.

This paper aims to report on the use of radio frequency nitrogen plasma‐assisted molecular beam epitaxy (RF‐MBE) to grow high‐quality n‐type In_0.47Ga0.53N/GaN on Si(111) substrate using AlN as a buffer layer.

Structural analyses of the InGaN films were performed by using X‐ray diffraction, atomic force microscopy, and Hall measurement. Metal‐semiconductor‐metal (MSM) photodiode was fabricated on the In_0.47Ga0.53N/Si(111) films. Electrical analysis of the MSM photodiodes was carried out by using current‐voltage (I‐V) measurements. Ideality factors and Schottky barrier heights for Ni/In_0.47Ga0.53N, was deduced to be 1.01 and 0.60 eV, respectively.

The In_0.47Ga0.53N MSM photodiode shows a sharp cut‐off wavelength at 840 nm. A maximum responsivity of 0.28 A/W was achieved at 839 nm. The detector shows a little decrease in responsivity from 840 to 200 nm. The responsivity of the MSM drops by nearly two orders of magnitude across the cut‐off wavelength.

Focuses on III‐nitride semiconductors, which are of interest for applications in high temperature/power electronic devices.

The purpose of this paper is to demonstrate the I‐V characteristics of ZnO film on Si substrates with Ag buffer layer by conductive atomic force (C‐AFM).

An Ag buffer layer and Zn film was first deposited on silicon substrate by RF‐sputtering deposition method from high pure Ag and Zn target, respectively. Then, the deposited film was sintered in air at 500°C for 1 h.

The structures and morphologies of the prepared films were characterized by X‐ray diffraction (XRD), energy dispersive spectrum (EDS), atomic force microscopy (AFM), and C‐AFM. The results show that the prepared ZnO films with Ag buffer layer have a good crystallinity and surface morphology. Interestingly, the I‐V curve of ZnO film exhibited typical characteristics of semi‐conductive oxide under the conductive Ag buffer layer.

The paper demonstrates, by C‐AFM, that the ZnO/Ag‐buffer/Si exhibits excellent crystal structure, morphology and typical I‐V characteristics.

As a high-performance engineering plastic, polyimide (PI) is widely used in the aerospace, electronics and automotive industries. This paper aims to review the latest progress in the tribological properties of PI-based composites, especially the effects of nanofiller selection, composite structure design and material modification on the tribological and mechanical properties of PI-matrix composites.

The preparation technology of PI and its composites is introduced and the effects of carbon nanotubes (CNTs), carbon fibers (CFs), graphene and its derivatives on the mechanical and tribological properties of PI-based composites are discussed. The effects of different nanofillers on tensile strength, tensile modulus, coefficient of friction and wear rate of PI-based composites are compared.

CNTs can serve as the strengthening and lubricating phase of PI, whereas CFs can significantly enhance the mechanical properties of the matrix. Two-dimensional graphene and its derivatives have a high modulus of elasticity and self-lubricating properties, making them ideal nanofillers to improve the lubrication performance of PI. In addition, copolymerization can improve the fracture toughness and impact resistance of PI, thereby enhancing its mechanical properties.

The mechanical and tribological properties of PI matrix composites vary depending on the nanofiller. Compared with nanofibers and nanoparticles, layered reinforcements can better improve the friction properties of PI composites. The synergistic effect of different composite fillers will become an important research system in the field of tribology in the future.

The purpose of this paper is to present possibility of fast and certain identification of bovine serum albumin (BSA) by means of ion-sensitive field effect transistor (ISFET) structures. Because BSA can cause allergic reactions in humans, it is one of reasons for development of sensitive sensors to detect residual BSA. BSA is commonly used in biochemistry and molecular biology in laboratory experiments. Therefore, to better understand the mechanism of signal transduction in simulated biological environment and to elucidate the role of adsorption of biomolecules in the generation of a signal at the interface with biological systems, the measurements of ISFET current response in the presence of BSA as a reference protein molecule were performed.

To fabricate transistors, silicon technology was used. The ISFET structures were coupled to specially designed double-side printed circuit board holder. After modification of the field effect transistor (FET) device with 3-aminopropyltriethoxysilane (APTES), a sensor with high sensitivity toward reference biomolecules was obtained. The current–voltage (I-V) characteristics of structures with and without gate modification were measured. Keithley SMU 236/237/238 measurement set was used. Deionized water solution and 0.05 per cent BSA were used.

In this research, a method of preparation of a biosensor based on a FET was developed. Sensitivity of APTES-modified FET device toward BSA as a biomolecule was investigated. I-V relationships of FET devices (with and without modification), being the effect of the interactions with the solution containing 0.05 per cent BSA, were measured and compared to the measurements performed for solutions without BSA.

Compared to SiO₂-containing ISFETs without modification or other different dielectrics, the application of APTES as the part of the membrane induced significant increase in their sensitivity to BSA.

This paper is devoted to prepare micro-cone structure with variable cross-section size by Stereo Lithography Appearance (SLA)-based 3D additive manufacturing technology. It is mainly focused on analyzing the forming mechanism of equipment and factors affecting the forming quality and accuracy, investigating the influence of forming process parameters on the printing quality and optimization of the printing quality. This study is expected to provide a µ-SLA surface preparation technology and process parameters selection with low cost, high precision and short preparation period for microstructure forming.

The µ-SLA process is optimized based on the variable cross-section micro-cone structure printing. Multi-index analysis method was used to analyze the influence of process parameters. The process parameter influencing order is determined and validated with flawless micro array structure.

After the optimization analysis of the top diameter size, the bottom diameter size and the overall height, the influence order of the printing process parameters on the quality of the micro-cone forming is: exposure time (B), print layer thickness (A) and number of vibrations (C). The optimal scheme is A1B3C1, that is, the layer thickness of 5 µm, the exposure time of 3000 ms and the vibration of 64x. At this time, the cone structure with the bottom diameter of 50 µm and the cone angle of 5° could obtain a better surface structure.

This study is expected to provide a µ-SLA surface preparation technology and process parameters selection with low cost, high precision and short preparation period for microstructure forming.