Direct bonding of silicon with solders type Sn-Ag-Ti
Abstract
Purpose
The work aims to study the direct bonding of silicon substrate with solders type Sn-Ag-Ti.
Design/methodology/approach
During the bonding process with ultrasound assistance, the active element (Ti,Ce,Mg) is distributed from the solder to interface with a silicon substrate, where it supports the bond formation.
Findings
Formation of a reaction layer, 1-2 μm in thickness, was observed. The new Si2Ti phases and Mg2Si phase were identified in the reaction layer.
Originality/value
The results of analysis suggest that the Si/Sn-Ag-Ti joint is of diffusion character. The highest average strength on silicon substrate (39 MPa) was achieved with Sn-Ag-Ti(Mg) solder.
Keywords
Acknowledgements
This paper was prepared with the support of APVV–0023–12 project: Research of new soldering alloys for fluxless soldering with application of beam technologies and ultrasound and VEGA 1/0455/14 project: research of modified solders for fluxless soldering of metallic and ceramic materials. The authors thank Ing Marián Drienovský, PhD, for DSC analysis, Associate Prof Ing Maroš Martinkovič, PhD, for shear strength measurements, Ing Martin Kusý, PhD, for XRD analysis and Ing Michal Chachula, PhD, for the methodology.
Citation
Kolenak, R., Kostolný, I. and Sahul, M. (2016), "Direct bonding of silicon with solders type Sn-Ag-Ti", Soldering & Surface Mount Technology, Vol. 28 No. 3, pp. 149-158. https://doi.org/10.1108/SSMT-11-2015-0040
Publisher
:Emerald Group Publishing Limited
Copyright © 2016, Emerald Group Publishing Limited