The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

Abstract

Purpose

The purpose of this paper is to investigate the effect of growth temperature on the evolution of indium incorporation and the growth process of InGaN/GaN heterostructures.

Design/methodology/approach

To examine this effect, the InGaN/GaN heterostructures were grown using Taiyo Nippon Sanso Corporation metal-organic chemical vapor deposition (MOCVD) SR4000-HT system. The InGaN/GaN heterostructures were epitaxially grown on 3.4 µm undoped-GaN (ud-GaN) and GaN nucleation layer, respectively, over a commercial 2” c-plane flat sapphire substrate. The InGaN layers were grown at different temperature settings ranging from 860°C to 820°C in a step of 20°C. The details of structural, surface morphology and optical properties were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), atomic force microscopy and ultraviolet-visible (UV-Vis) spectrophotometer, respectively.

Findings

InGaN/GaN heterostructure with indium composition up to 10.9% has been successfully grown using the MOCVD technique without any phase separation detected within the sensitivity of the instrument. Indium compositions were estimated through simulation fitting of the XRD curve and calculation of Vegard’s law from UV-Vis measurement. The thickness of the structures was determined using the Swanepoel method and the FE-SEM cross-section image.

Originality/value

This paper report on the effect of MOCVD growth temperature on the growth process of InGaN/GaN heterostructure, which is of interest in solid-state lighting technology, especially in light-emitting diodes and solar cell application.

Citation

Yusof, A.S., Hassan, Z., Ould Saad Hamady, S., Ng, S.S., Ahmad, M.A., Lim, W.F., Che Seliman, M.A., Chevallier, C. and Fressengeas, N. (2021), "The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures", Microelectronics International, Vol. 38 No. 3, pp. 105-112. https://doi.org/10.1108/MI-02-2021-0018