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This paper aims to design a new bandgap reference circuit with complementary metal–oxide–semiconductor (CMOS) technology.

Different from the conventional bandgap reference circuit with operational amplifiers, this design directly connects the two bases of the transistors with both the ends of the resistor. The transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of low dropout regulator (LDO) regulator circuit, at last to realize the temperature control. In addition, introducing the depletion-type metal–oxide–semiconductor transistor and the transistor operating in the saturation region through the connection of the novel circuit structure makes a further improvement on the performance of the whole circuit.

This design is base on the 0.18?m process of BCD, and the new bandgap reference circuit is verified. The results show that the circuit design not only is simple and novel but also can effectively improve the performance of the circuit. Bandgap voltage reference is an important module in integrated circuits and electronic systems. To improve the stability and performance of the whole circuit, simple structure of the bandgap reference voltage source is essential for a chip.

This paper adopts a new circuit structure, which directly connects the two base voltages of the transistors with the resistor. And the transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of LDO regulator circuit, at last to realize the temperature control.

The purpose of this paper is to improve the properties of Sn−9Zn solder, so as to meet the requirements of industrial applications.

The effects of Praseodymium on property and Sn whisker growth under aging treatment in Sn−9Zn lead‐free solder were investigated.

The results indicate that with the addition of rare earth Pr, the wettability and mechanical properties of Sn−9Zn solder were improved. The best wettability and comprehensive property of soldered joint is obtained when the content of Pr is 0.08 wt.%. After aging treatment at 150°C for 360 h, the mechanical properties of Sn−9Zn−0.08Pr decreased but are still obviously higher than that of Sn−9Zn. Moreover, when the content of Pr reached 0.1 wt.%, plenty of Sn−Pr compounds were found in the Sn−9Zn solder. The inevitable oxidation of Sn−Pr compounds would cause a high stress accumulated within PrSn3 phases, which would be served as driving force to induce the Sn whisker sprout and growth after aging treatment at 150°C for 120 h to 360 h. Compared with the results in Sn−9Zn−0.5Ga−0.7Pr solder that Sn whisker observed until the addition of Pr reached 0.7 wt.%, it could be inferred that the addition of Ga may react against the sprout of Sn whisker.

It is found that the addition of Pr can improve the properties of solder and avoid Sn whisker growth in the right range and proper conditions. The cost of the solder with added Pr is limited to RMB 2 yuan/kg so it can be widely used in industry.