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It is increasingly recognised that managers play a central role in organisational ambidexterity. While some scholars have recently begun to explain the nature and antecedents of ambidextrous behaviour among managers, much remains to be learned about the micro-foundations of this behaviour. Adopting a people–situation interaction approach, this paper investigates the antecedents to managerial ambidexterity from both situational and individual difference considerations.

This study adopts a quantitative approach using a combination of survey and archival data from 305 managers.

The results indicate that learning goal orientation is positively related with managerial ambidexterity, whereas there is no significant relationship between functional experience breadth and managerial ambidexterity. In testing moderation effects, discretionary slack is found to positively moderate the association between learning goal orientation and ambidexterity and between functional experiences and ambidexterity.

This paper provides suggestions on employees selection and training, along with organisational support, in enacting managerial ambidexterity.

Guided by individual difference theory, this paper adds value to one’s understanding of the antecedents to managerial ambidexterity. It contributes to the ambidexterity literature from the micro-foundation perspective.

This article aims to investigate the most applied lean warehouse practices in Brazilian warehouses.

To perform this research, three phases were conducted: a literature review, a multiple case study, and an analysis of lean warehouses practices implementation by an engineering committee. Thus, both qualitative and quantitative approaches were used. Additionally, the study has an applied nature, with an exploratory and descriptive character.

Results showed that regardless of the type of criterion used, the most implanted practices are those that do not involve investments in technology. On the other hand, practices like RFID and Cross Docking systems were not found in any of the operations, which shows numerous possibilities for improvement.

The main contribution of this article is to initiate a debate about the management and productivity of Brazilian warehouses, a theme still little explored by the academic community despite the importance that the logistic scenario represents for Brazil as an emerging country and leader in Latin America, participating actively in several global supply chains.

This paper aims to estimate the relationship between defect structure with gas concentration for use as a gas sensor. The change in defect concentration caused a shift in the Fermi level, which in turn changed the surface potential, which is manifested as the potentiometric response of the sensing element.

A new theoretical concept based on defect chemistry and band structure was used to explain the experimental gas response of a sensor. The theoretically simulated response was compared with experimental results.

Understanding the origin of potentiometric response, through the generation of defects and a corresponding shift in Fermi level of sensing surface, by the adsorption of gas. Through this understanding, the design of a sensor with improved selectivity and stability to a gas can be achieved by the study of defect structure and subsequent band analysis.

This paper provides information about various types of surface defects and numerical simulation of material with defect structure. The Fermi energy of the simulated value is correlated with the potentiometric sensor response.

Gas sensors are an integral part of vehicular and industrial pollution control. The theory developed shows the origin of response which can help in identifying the best sensing material and its optimum temperature of operation.

Low-cost, reliable and highly sensitive gas sensors are highly demanded which is fulfilled by potentiometric sensors.

The operating principle of potentiometric sensors is analyzed through electron band structure analysis. With the change in measured gas concentration, the oxygen partial pressure changes. This results in a change in defect concentration in the sensing surface. Band structure analysis shows that change in defect concentration is associated with a shift in Fermi level. This is the origin of the potentiometric response.