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The purpose of this article is the effect of doping minor Ni on the microstructure evolution of a Sn-xNi (x = 0, 0.05 and 0.1 wt.%)/Ni (Poly-crystal/Single-crystal abbreviated as PC Ni/SC Ni) solder joint during reflow and aging treatment. Results showed that the intermetallic compounds (IMCs) of the interfacial layer of Sn-xNi/PC Ni joints were Ni₃Sn₄ phase, while the IMCs of Sn-xNi/SC Ni joints were NiSn₄ phase. After the reflow process and thermal aging of different joints, the growth behavior of interfacial layer was different due to the different mechanism of element diffusion of the two substrates. The PC Ni substrate mainly provided Ni atoms through grain boundary diffusion. The Ni₃Sn₄ phase of the Sn0.05Ni/PC Ni joint was finer, and the diffusion flux of Sn and Ni elements increased, so the Ni₃Sn₄ layer of this joint was the thickest. The SC Ni substrate mainly provided Ni atoms through the lattice diffusion. The Sn0.1Ni/SC Ni joint increases the number of Ni atoms at the interface due to the doping of 0.1Ni (wt.%) elements, so the joint had the thickest NiSn₄ layer.

The effects of doping minor Ni on the microstructure evolution of an Sn-xNi (x = 0, 0.05 and 0.1 Wt.%)/Ni (Poly-crystal/Single-crystal abbreviated as PC Ni/SC Ni) solder joint during reflow and aging treatment was investigated in this study.

Results showed that the intermetallic compounds (IMCs) of the interfacial layer of Sn-xNi/PC Ni joints were Ni₃Sn₄ phase, while the IMCs of Sn-xNi/SC Ni joints were NiSn₄ phase. After the reflow process and thermal aging of different joints, the growth behavior of the interfacial layer was different due to the different mechanisms of element diffusion of the two substrates.

In this study, the effect of doping Ni on the growth and formation mechanism of IMCs of the Sn-xNi/Ni (single-crystal) solder joints (x = 0, 0.05 and 0.1 Wt.%) was investigated.

The Kirkendall void had been a well-known issue for long-term reliability of semiconductor interconnects; while even the KVs exist at the interfaces of Cu and Sn, it may still be able to pass the condition of unbias long-term reliability testing, especially for 2,000 cycles of temperature cycling test and 2,000 h of high temperature storage. A large number of KVs were observed after 200 cycles of temperature cycling test at the intermetallic Cu₃Sn layer which locate between the intermetallic Cu₆Sn₅ and Cu layers. These kinds of voids will grow proportional with the aging time at the initial stage. This paper aims to compare various IMC thickness as a function of stress test, the Cu₃Sn and Cu₆Sn₅ do affected seriously by heat, but Ni₃Sn₄ is not affected by heat or moisture.

The package is the design in the flip chip-chip scale package with bumping process and assembly. The package was put in reliability stress test that followed AEC-Q100 automotive criteria and recorded the IMC growing morphology.

The Cu₆Sn₅ intermetallic compound is the most sensitive to continuous heat which grows from 3 to 10 µm at high temperature storage 2,000 h testing, and the second is Cu₃Sn IMC. Cu₆Sn₅ IMC will convert to Cu₃Sn IMC at initial stage, and then Kirkendall void will be found at the interface of Cu and Cu₃Sn IMC, which has quality concerning issue if the void’s density grows up. The first phase to form and grow into observable thickness for Ni and lead-free interface is Ni₃Sn₄ IMC, and the thickness has little relationship to the environmental stress, as no IMC thickness variation between TCT, uHAST and HTSL stress test. The more the Sn exists, the thicker Ni₃Sn₄ IMC will be derived from this experimental finding compare the Cu/Ni/SnAg cell and Ni/SnAg cell.

The research found that FCCSP can pass automotive criteria that follow AEC-Q100, which give the confidence for upgrading the package type with higher efficiency and complexities of the pin design.

This result will impact to the future automotive package, how to choose the best package methodology and what is the way to do the package. The authors can understand the tolerance for the kind of flip chip package, and the bump structure is then applied for high-end technology.

The overall three kinds of bump structures, Cu/Ni/SnAg, Cu/SnAg and Ni/SnAg, were taken into consideration, and the IMC growing morphology had been recorded. Also, the IMC had changed during the environmental stress, and KV formation was reserved.

This paper aims to investigate voiding phenomena in solder joints under thermal pads of light-emitting diodes (LEDs) assembled in mass production environment by reflow soldering by using seven low-voiding lead-free solder pastes.

The solder pastes investigated are of SAC305 type, Innolot type or they are especially formulated by the manufacturers on the base of (SnAgCu) alloys with addition of some alloying elements such as Bi, In, Sb and Ti to provide low-void contents. The SnPb solder paste – OM5100 – was used as a benchmark. The solder paste coverage of LED solder pads was chosen as a measure of void contents in solder joints because of common usage of this parameter in industry practice.

It was found that the highest coverage and, related to it, the least void contents are in solder joints formed with the pastes LMPA-Q and REL61, which are characterized by the coverage of mean value 93.13% [standard deviation (SD) = 2.72%] and 92.93% (SD = 2.77%), respectively. The void diameters reach the mean value equal to 0.061 mm (SD = 0.044 mm) for LMPA-Q and 0.074 mm (SD = 0.052 mm) for REL61. The results are presented in the form of histograms, plot boxes and X-ray images. Some selected solder joints were observed with 3D computer tomography.

The statistical analyses are carried out on the basis of 2D X-ray images with using Origin software. They enable to compare features of various solder pastes recommended by manufacturers as low voiding. The results might be useful for solder paste manufacturers or electronic manufacturing services.