Atomic structure for AlN grown on different plane orientation of sapphire via numerical study

Abstract

Purpose

This study aims to present a numerical study of atomic structure for aluminium nitride (AlN) when the crystal was assumed grown on different orientation of sapphire substrate. The change of the AlN atomic structure with sapphire orientation was associated to the interface between the AlN and the sapphire. The results from this study would provide a guideline in selecting suitable orientation of sapphire for obtaining desirable AlN crystals, in particular, for reducing threading dislocation density in the AlN/sapphire templates for developing UV LEDs.

Design/methodology/approach

The approach of atomic structure by visualization for electronic and structural analysis numerical method to develop shape of atomic geometry to evaluate which plane are more suitable for the AlGaN technology UV-LED based.

Findings

The calculation based on ratio on first and second layers can be done by introduction of lattice constant.

Research limitations/implications

With plane’s color of cutting plane on bulky materials, all the shape looks the same.

Practical implications

By implementing this method, the authors can save time to find the most suitable plane on the growth structure.

Originality/value

All authors of this research paper have directly participated in the planning, execution or analysis of the study; all authors of this paper have read and approved the final version submitted; the contents of this manuscript have not been copyrighted or published previously; the contents of this manuscript are not now under consideration for publication elsewhere; the contents of this manuscript will not be copyrighted, submitted or published elsewhere, whereas acceptance by the journal is under consideration.

Citation

Mansor, M., M., S., Yusuf, Y. and Abdul Rahman, M.N. (2023), "Atomic structure for AlN grown on different plane orientation of sapphire via numerical study", Microelectronics International, Vol. 40 No. 1, pp. 46-52. https://doi.org/10.1108/MI-04-2022-0065