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1 – 10 of 23
Article
Publication date: 1 January 2014

Banu Poobalan, Jeong Hyun Moon, Sang-Cheol Kim, Sung-Jae Joo, Wook Bahng, In Ho Kang, Nam-Kyun Kim and Kuan Yew Cheong

The high density of defects mainly attributed to the presence of silicon oxycarbides, residual C clusters, Si- and C-dangling bonds at or near the SiO2/SiC interface degrades the…

Abstract

Purpose

The high density of defects mainly attributed to the presence of silicon oxycarbides, residual C clusters, Si- and C-dangling bonds at or near the SiO2/SiC interface degrades the performance of metal-oxide-semiconductor (MOS) devices. In the effort of further improving the quality and enhancement of the SiC oxides thickness, post-oxidation annealed by a combination of nitric acid (HNO3) and water (H2O) vapor technique on thermally grown wet-oxides is introduced in this work. The paper aims to discuss these issues.

Design/methodology/approach

A new technique of post-oxidation annealing (POA) on wet-oxidized n-type 4H-SiC in a combination of HNO3 and H2O vapor at various heating temperatures (70°C, 90°C and 110°C) of HNO3 solution has been introduced in this work.

Findings

It has been revealed that the samples annealed in HNO3 + H2O vapour ambient by various heating temperatures of HNO3 solution; particularly at 110°C is able to produce oxide with lower interface-state density and higher breakdown voltage as compared to wet-oxidized sample annealed in N2 ambient. The substrate properties upon oxide removal show surface roughness reduces as the heating temperature of HNO3 solution increases, which is mainly attributed due to the significant reduction of carbon content at the SiC/SiO2 interface by C=N passivation and CO or CO2 out-diffusion.

Originality/value

Despite being as a strong oxidizing agent, vaporized HNO3 can also be utilized as nitridation and hydrogen passivation agent in high temperature thermal oxidation ambient and these advantages were demonstrated in 4H-SiC.

Details

Microelectronics International, vol. 31 no. 1
Type: Research Article
ISSN: 1356-5362

Keywords

Article
Publication date: 13 April 2015

Elias P. Koumoulos, Vasiliki P. Tsikourkitoudi, Ioannis A. Kartsonakis, Vassileios E. Markakis, Nikolaos Papadopoulos, Evangelos Hristoforou and Costas A. Charitidis

The purpose of this paper is to produce cobalt (Co)-based thin films by metalorganic chemical vapor deposition (CVD) technique and then to evaluate structural and mechanical…

Abstract

Purpose

The purpose of this paper is to produce cobalt (Co)-based thin films by metalorganic chemical vapor deposition (CVD) technique and then to evaluate structural and mechanical integrity.

Design/methodology/approach

Co-based thin films were produced by metalorganic CVD technique. Boronizing, carburization and nitridation of the produced Co thin films were accomplished through a post-treatment stage of thermal diffusion into as-deposited Co thin films, in order to produce cobalt boride (Co2B), cobalt carbide and cobalt nitride thin films in the surface layer of Co. The surface topography and the crystal structure of the produced thin films were evaluated through scanning electron microscopy and X-ray diffraction, respectively. The mechanical integrity of the produced thin films was evaluated through nanoindentation technique.

Findings

The obtained results indicate that Co2B thin film exhibits the highest nanomechanical properties (i.e. H and E), while Co thin film has enhanced plasticity. The cobalt oxide thin film exhibits higher resistance to wear in comparison to the cobalt thin film, a fact that is confirmed by the nanoscratch analysis showing lower coefficient of friction for the oxide.

Originality/value

This work is original.

Article
Publication date: 12 November 2013

Bablu Ghosh, Norfarariyanti bte. Parimon and Akio Yamamoto

The crystalline quality of wider direct band gap semiconductor (3.4 eV) h-GaN epilayer grown on Si (111) is evaluated by different growth approaches and by using different…

Abstract

The crystalline quality of wider direct band gap semiconductor (3.4 eV) h-GaN epilayer grown on Si (111) is evaluated by different growth approaches and by using different interlayer's. The investigations of GaN epilayer crystal quality for the template of converted porous GaN layer formed by novel nitridation process of thin (2 and 0.5 μm) GaAs layer on Si (111) and on C+ ion implanted very thin SiC layer formed on Si (111) and grown ambient effect are made. Epilayer grown on thinner non-isoelectronic converted SiC templates is found to broaden its PL line width whereas epilayer grown on porously converted GaN layer fromed from iso- electronic GaAs (111) layer on Si (111) is found narrow line width. H2 ambient grown film better crystalline quality and higher PL Ex. peak energy is found as compared to N2 ambient grown film. Low temperature PL measurement, similarity between defect related donor-acceptor peaks (DAP) to defect related yellow band luminescence at the room temperature PL measurement is also found. Grown epilayer different characterization reveals better crystalline quality h-GaN is achieved by using thin iso-electronic GaAS interlayer on Si (111) with H2 grown ambient.

Details

World Journal of Engineering, vol. 10 no. 5
Type: Research Article
ISSN: 1708-5284

Keywords

Article
Publication date: 25 July 2019

Vipin Tandon, Awanikumar P. Patil and Ramesh C. Rathod

The purpose of this paper is to enhance the corrosion resistance of Cr-Mn austenitic stainless steel (ASS) via low temperature salt bath nitriding and to replace the convectional…

Abstract

Purpose

The purpose of this paper is to enhance the corrosion resistance of Cr-Mn austenitic stainless steel (ASS) via low temperature salt bath nitriding and to replace the convectional Cr-Ni ASS with newly developed enhanced corrosion resistive Cr-Mn ASS.

Design/methodology/approach

The low temperature salt bath nitriding was performed on Cr-Mn ASS at 450°C for 3 h in potassium nitrate salt bath.

Findings

The present paper compares the corrosion resistance of salt bath nitrided Cr-Mn ASS with convectional Cr-Ni ASSs (316 L and 304 L ASSs) in 3.5 per cent NaCl by electrochemical techniques. The electrochemical impedance spectroscopy result shows the increase in film resistance and potentiodynamic polarization results show the enhanced corrosion resistance of nitrided Cr-Mn ASS, which is almost equivalent to that of 316 L and 304 L ASSs. This is attributed to the formation of nitrogen supersaturated dense nitride layer. The present results therefore suggest that the nitrided Cr-Mn ASS may replace costly convectional Cr-Ni ASSs for commercial and industrial applications.

Originality/value

Ever-increasing price of nickel (Ni) is driving the industries to use Ni-free or low-Ni austenitic stainless steels (ASSs). But its corrosion resistance is relatively poor as compared to conventional Cr-Ni ASSs. However, its corrosion resistance can be improved by nitriding. The low temperature salt bath nitriding of Cr-Mn ASS and its electrochemical behavior in 3.5 per cent NaCl has not been studied. The present research paper is beneficial for industries to use low cost Cr-Mn, enhance its corrosion resistance and replace the use of costly conventional Cr-Ni ASSs.

Details

Anti-Corrosion Methods and Materials, vol. 66 no. 4
Type: Research Article
ISSN: 0003-5599

Keywords

Article
Publication date: 11 October 2022

Mazwan Mansor, Syamsul M., Yusnizam Yusuf and Mohd Nazri Abdul Rahman

This study aims to present a numerical study of atomic structure for aluminium nitride (AlN) when the crystal was assumed grown on different orientation of sapphire substrate. The…

Abstract

Purpose

This study aims to present a numerical study of atomic structure for aluminium nitride (AlN) when the crystal was assumed grown on different orientation of sapphire substrate. The change of the AlN atomic structure with sapphire orientation was associated to the interface between the AlN and the sapphire. The results from this study would provide a guideline in selecting suitable orientation of sapphire for obtaining desirable AlN crystals, in particular, for reducing threading dislocation density in the AlN/sapphire templates for developing UV LEDs.

Design/methodology/approach

The approach of atomic structure by visualization for electronic and structural analysis numerical method to develop shape of atomic geometry to evaluate which plane are more suitable for the AlGaN technology UV-LED based.

Findings

The calculation based on ratio on first and second layers can be done by introduction of lattice constant.

Research limitations/implications

With plane’s color of cutting plane on bulky materials, all the shape looks the same.

Practical implications

By implementing this method, the authors can save time to find the most suitable plane on the growth structure.

Originality/value

All authors of this research paper have directly participated in the planning, execution or analysis of the study; all authors of this paper have read and approved the final version submitted; the contents of this manuscript have not been copyrighted or published previously; the contents of this manuscript are not now under consideration for publication elsewhere; the contents of this manuscript will not be copyrighted, submitted or published elsewhere, whereas acceptance by the journal is under consideration.

Details

Microelectronics International, vol. 40 no. 1
Type: Research Article
ISSN: 1356-5362

Keywords

Article
Publication date: 7 January 2019

Chee Yong Fong, Sha Shiong Ng, NurFahana Mohd Amin, Fong Kwong Yam and Zainuriah Hassan

This study aims to explore the applicability of the sol-gel-derived GaN thin films for UV photodetection.

Abstract

Purpose

This study aims to explore the applicability of the sol-gel-derived GaN thin films for UV photodetection.

Design/methodology/approach

GaN-based ultraviolet (UV) photodetector with Pt Schottky contacts was fabricated and its applicability was investigated. The current-voltage (I-V) characteristics of the GaN-based UV photodetector under the dark current and photocurrent were measured.

Findings

The ideality factors of GaN-based UV photodetector under dark current and photocurrent were 6.93 and 5.62, respectively. While the Schottky barrier heights (SBH) for GaN-based UV photodetector under dark current and photocurrent were 0.35 eV and 0.34 eV, respectively. The contrast ratio and responsivity of this UV photodetector measured at 5 V were found to be 1.36 and 1.68 μA/W, respectively. The photoresponse as a function of time was measured by switching the UV light on and off continuously at different forward biases of 1, 3 and 6 V. The results showed that the fabricated UV photodetector has reasonable stability and repeatability.

Originality/value

This work demonstrated that GaN-based UV photodetector can be fabricated by using the GaN thin film grown by low-cost and simple sol-gel spin coating method.

Details

Microelectronics International, vol. 36 no. 1
Type: Research Article
ISSN: 1356-5362

Keywords

Article
Publication date: 16 August 2011

Mumin Sahin and Ceyhun Sevil

The aim is to provide detailed mechanical and metallurgical examinations of ion‐nitrided austenitic‐stainless steels.

Abstract

Purpose

The aim is to provide detailed mechanical and metallurgical examinations of ion‐nitrided austenitic‐stainless steels.

Design/methodology/approach

Austenitic‐stainless steel was the material chosen for the present study. Ion nitriding process was applied to fatigue and tensile samples prepared by machining. Process temperature was 550°C and treatment time period 24 and 60 h. Then, tensile, fatigue, notch‐impact, hardness tests were applied and metallographic examinations were performed.

Findings

High temperature and longer treatment by ion nitriding decreased fatigue and tensile strengths together with notch‐impact toughness. Scanning electron microscopy and energy dispersive X‐ray spectroscopy analysis revealed formation of nitrides on the sample surfaces. Surface hardness increased with an increase in process time due to diffusion of nitrogen during ion nitriding.

Research limitations/implications

It would be interesting to search the different temperature and time intervals of the ion nitriding. It could be a good idea if future work could be concentrated on ion nitriding on welded stainless steels.

Practical implications

Surfaces of mechanical parts are exposed to higher stress and abrasive forces compared to inside mechanical parts during the time period that mechanical components carry out their expected functions. When stresses and forces exceed the surface strength limit of the material, cracks begin to form at the material surface leading to abrasion and corrosion. Therefore, surface strength of materials needs to be increased to provide a longer service life. Ion (plasma) nitriding is a possible remedy for surface wear.

Originality/value

The main value of this paper is to contribute and fulfil the detailed mechanical and metallurgical examinations of ion‐nitrided austenitic‐stainless steels that are being studied so far in the literature.

Details

Industrial Lubrication and Tribology, vol. 63 no. 5
Type: Research Article
ISSN: 0036-8792

Keywords

Open Access
Article
Publication date: 9 February 2024

Martin Novák, Berenika Hausnerova, Vladimir Pata and Daniel Sanetrnik

This study aims to enhance merging of additive manufacturing (AM) techniques with powder injection molding (PIM). In this way, the prototypes could be 3D-printed and mass…

Abstract

Purpose

This study aims to enhance merging of additive manufacturing (AM) techniques with powder injection molding (PIM). In this way, the prototypes could be 3D-printed and mass production implemented using PIM. Thus, the surface properties and mechanical performance of parts produced using powder/polymer binder feedstocks [material extrusion (MEX) and PIM] were investigated and compared with powder manufacturing based on direct metal laser sintering (DMLS).

Design/methodology/approach

PIM parts were manufactured from 17-4PH stainless steel PIM-quality powder and powder intended for powder bed fusion compounded with a recently developed environmentally benign binder. Rheological data obtained at the relevant temperatures were used to set up the process parameters of injection molding. The tensile and yield strengths as well as the strain at break were determined for PIM sintered parts and compared to those produced using MEX and DMLS. Surface properties were evaluated through a 3D scanner and analyzed with advanced statistical tools.

Findings

Advanced statistical analyses of the surface properties showed the proximity between the surfaces created via PIM and MEX. The tensile and yield strengths, as well as the strain at break, suggested that DMLS provides sintered samples with the highest strength and ductility; however, PIM parts made from environmentally benign feedstock may successfully compete with this manufacturing route.

Originality/value

This study addresses the issues connected to the merging of two environmentally efficient processing routes. The literature survey included has shown that there is so far no study comparing AM and PIM techniques systematically on the fixed part shape and dimensions using advanced statistical tools to derive the proximity of the investigated processing routes.

Article
Publication date: 1 January 1986

After many very successful years as a researcher and manager at British Telecommunications Research Laboratories, Nihal Sinnadurai has moved over to consultancy with BPA…

Abstract

After many very successful years as a researcher and manager at British Telecommunications Research Laboratories, Nihal Sinnadurai has moved over to consultancy with BPA (Technology & Management) Ltd.

Details

Microelectronics International, vol. 3 no. 1
Type: Research Article
ISSN: 1356-5362

Article
Publication date: 12 November 2020

Abid Ullah, HengAn Wu, Asif Ur Rehman, YinBo Zhu, Tingting Liu and Kai Zhang

The purpose of this paper is to eliminate Part defects and enrich additive manufacturing of ceramics. Laser powder bed fusion (L-PBF) experiments were carried to investigate the…

Abstract

Purpose

The purpose of this paper is to eliminate Part defects and enrich additive manufacturing of ceramics. Laser powder bed fusion (L-PBF) experiments were carried to investigate the effects of laser parameters and selective oxidation of Titanium (mixed with TiO2) on the microstructure, surface quality and melting state of Titania. The causes of several L-PBF parts defects were thoroughly analyzed.

Design/methodology/approach

Laser power and scanning speed were varied within a specific range (50–125 W and 170–200 mm/s, respectively). Furthermore, varying loads of Ti (1%, 3%, 5% and 15%) were mixed with TiO2, which was selectively oxidized with laser beam in the presence of oxygen environment.

Findings

Part defects such as cracks, pores and uneven grains growth were widely reduced in TiO2 L-PBF specimens. Increasing the laser power and decreasing the scanning speed shown significant improvements in the surface morphology of TiO2 ceramics. The amount of Ti material was fully melted and simultaneously changed into TiO2 by the application of the laser beam. The selective oxidation of Ti material also improved the melting condition, microstructure and surface quality of the specimens.

Originality/value

TiO2 ceramic specimens were produced through L-PBF process. Increasing the laser power and decreasing the scanning speed is an effective way to sufficiently melt the powders and reduce parts defects. Selective oxidation of Ti by a high power laser beam approach was used to improve the manufacturability of TiO2 specimens.

1 – 10 of 23