Influence of the SiNx:H layer deposited by PECVD technique on the surface and grain boundary passivation of mc-Si
Article publication date: 1 August 2016
In this paper, we aim to investigate the influence of the hydrogenated silicon nitride layers deposited by a large area 13.56 MHz plasma-enhanced chemical vapour deposition system on the electrical activity of the surface and interfaces of the grains for solar cells fabricated on microcrystalline silicon and multicrystalline silicon.
The characterization of current-voltage parameters of 25 cm2 solar cells manufactured with different passivation and antireflective layers are presented. After spectral response measurements, external quantum efficiency was calculated, and the final results are shown graphically. The passivation effect concerning grain areas was evaluated more precisely by light-beam-induced current scan maps (LBIC).
The final impact of the type of passivation layer on surface and grain boundary photoconvertion in solar cells is determined.
The passivation effect concerning grain areas was evaluated more precisely by LBIC.
This publication is co-founded from Norway Grants in the Polish-Norwegian Research Programme operated by the National Centre for Research and Development in the frame of the Contract No. POL-NOR/199380/89/2014.
Kluska, S. and Panek, P. (2016), "Influence of the SiNx:H layer deposited by PECVD technique on the surface and grain boundary passivation of mc-Si", Microelectronics International, Vol. 33 No. 3, pp. 162-166. https://doi.org/10.1108/MI-03-2016-0026
Emerald Group Publishing Limited
Copyright © 2016, Emerald Group Publishing Limited