Atomic layer deposition of TiO₂ blocking layers for dye-sensitized solar cells

Abstract

Purpose

The purpose of this paper is to improve the efficiency of dye-sensitized solar cells (DSSCs) which present promising low-cost alternative to the conventional silicon solar cells mainly due to comparatively low manufacturing cost, ease of fabrication and relatively good efficiency. One of the undesirable factor in DSSCs is the electron recombination process that takes place at the transparent conductive oxide/electrolyte interface, on the side of photoelectrode. To reduce this effect in the structure of the solar cell, a TiO₂ blocking layer (BL) by atomic layer deposition (ALD) was deposited.

Design/methodology/approach

Scanning electron microscope, Raman and UV-Vis spectroscopy were used to evaluate the influence of BL on the photovoltaic properties. Electrical parameters of manufactured DSSCs with and without BL were characterized by measurements of current-voltage characteristics under standard AM 1.5 radiation.

Findings

The TiO₂ BL prevents the physical contact of fluorine-doped tin oxide (FTO) and the electrolyte and leads to increase in the cell’s overall efficiency, from 5.15 to 6.18%. Higher density of the BL, together with larger contact area and improved adherence between the TiO₂ layer and FTO surface provide more electron pathways from TiO₂ to FTO which facilitates electron transfer.

Originality/value

This paper demonstrates that the introduction of a BL into the photovoltaic device structure is an important step in technology of DSSCs to improve its efficiency. Moreover, the ALD is a powerful technique which allows for the highly reproducible growth of pinhole-free thin films with excellent thickness accuracy and conformality at low temperature.

Citation

Drygała, A., Szindler, M., Szindler, M. and Jonda, E. (2020), "Atomic layer deposition of TiO₂ blocking layers for dye-sensitized solar cells", Microelectronics International, Vol. 37 No. 2, pp. 87-93. https://doi.org/10.1108/MI-01-2020-0007