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Packaging Reliability for High Temperature Electronics: A Materials Focus

F.P. McCluskey (CALCE‐EPRC, University of Maryland, College Park, Maryland, USA)
L. Condra (Boeing BCAG, Seattle, Washington, USA)
T. Torri (Delco Electronics, Inc., Indiana, USA)
J. Fink (Honeywell, Inc., Minneapolis, Minnesota, USA)

Microelectronics International

ISSN: 1356-5362

Article publication date: 1 December 1996



An overview of the concerns involved in the operation of electronic hardware at elevated temperatures is presented. Materials selection and package design issues are addressed for a wide range of packaging elements from the semiconductor chip to the box. It is found that most elements of common high density device and packaging architecture can be used up to 200°C. However, gold‐aluminium wirebonds, eutectic tin‐lead solder joints and die attaches, and FR‐4 boards will seriously degrade at temperatures below 200°C. For these elements, alternative materials of construction are recommended. Comparisons are made between package design for high power dissipation and that for high temperature operation.



McCluskey, F.P., Condra, L., Torri, T. and Fink, J. (1996), "Packaging Reliability for High Temperature Electronics: A Materials Focus", Microelectronics International, Vol. 13 No. 3, pp. 23-26.




Copyright © 1996, MCB UP Limited

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