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Photon absorbance and reflectance are the most important parameters for the recombination of electron-hole pairs. Bandgap energy plays a vital role in photon absorption. That is, the photons with energy greater than band gap energy are absorbed. Also, the refractive index of semiconductors is responsible for photon reflection, as the surface with the highest refractive index will reflect more photons than a surface with have a low refractive index. The purpose of this paper is to improvise the absorbance and reduce the reflectance of photons on the front surface of solar cells.

Photon reflection is results in reduction in electron-hole pair generation due to the high refractive index of semiconductive materials. To overcome this problem, an Anti-reflection (AR) coating of TiO₂ and SiO₂ is undertaken on solar cells through the Sol-spin coating method. Finally, the effectiveness of the Anti-Reflection coating is scrutinized through UV Vis-Spectroscopy, which provides details regarding reflectance, absorbance and bandgap energy characteristics.

UV–visible spectroscopy was used to measure the responses from the samples. The samples responded to the ultraviolet and visible range of electromagnetic radiation perfectly. UV spectroscopy was done before and after the antireflection coating of TiO₂ and SiO₂ over the solar cell to find their corresponding extreme reflectance and absorbance values. The effects of TiO₂ and SiO₂ were evaluated from the results.

In this research work, the authors have done anti-reflection coating over solar cells with nanoparticles derived from sol-gel process. Absorbance of photons observed through diffuse reflection method.