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Article
Publication date: 1 April 1992
Andrzej Pfitzner and Miroslaw Grygolec
A new method for statistical process/device modeling has been developed and applied to determine the impurty profiles and the current‐voltage characteristics of the p‐n junction…
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Abstract
A new method for statistical process/device modeling has been developed and applied to determine the impurty profiles and the current‐voltage characteristics of the p‐n junction. This method combines accurate numerical solutions of the transport equations with internally calibrated fast analytical (semi‐empirical) models.
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