A new method for statistical process/device modeling has been developed and applied to determine the impurty profiles and the current‐voltage characteristics of the p‐n junction. This method combines accurate numerical solutions of the transport equations with internally calibrated fast analytical (semi‐empirical) models.
Pfitzner, A. and Grygolec, M. (1992), "Fast models for statistical process/device simulation", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 11 No. 4, pp. 545-548. https://doi.org/10.1108/eb010115Download as .RIS
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