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Modifications of physical and electrical properties of the vertical double‐diffused metal oxide semiconductor (VDMOS) transistor are observed on using the device under some conditions of “functional” stress. This paper presents the characterization and the 2D simulation for the pre‐ and post‐stressed device, to point out the degraded parameters due to the functional stress, and to analyze their effects on the degradation of the VDMOS static and dynamic characteristics.