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The purpose of this paper is to examine the policies and practices of internationalisation of higher education in Malaysia, and to specifically explore how Sustainable Development Goals are translated into policies and practices.

This paper takes a chronological and historical approach to examine policies and practices on internationalisation of higher education in Malaysia. This includes identifying patterns, trends and shifts on internationalisation at the system and institutional levels.

At the system level, Malaysia has transformed from a sending to receiving country, from being an aid recipient to an equal partner, and from a host to a provider. At the institutional level, internationalisation transforms from a fad to a norm, and from having unilateral collaboration to setting up multinational collaborations with international partners. Equally important, the paper discusses the role of internationalisation to address the global Sustainable Development Goals, and identify policy gaps at the national level and the de facto practices of Sustainable Development Goals at the institutional level.

This paper charts the changes of internationalisation of higher education in Malaysia, and importantly, shows gaps to incorporate the global Sustainable Development Goals and to relate this global agenda to the internationalisation of higher education.

This purpose of this study is to investigate the structural and morphology of hybrid silver-crosslinked chitosan thin films potentially for surface plasmon resonance (SPR) sensor application. Silver, silver-chitosan and silver-crosslinked chitosan (annealed) thin films also were prepared as controls for this study.

Silver was firstly coated on top of the glass substrate by magnetron sputtering method. Different chitosan solutions (with and without glutaraldehyde) were coated on top of the substrate by spin coating method. Annealing treatment was carried out for one of silver-crosslink chitosan sample. The structural and morphology of all the thin films were studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The SPR curves also were measured by the SPR sensor with air and deionised (DI) water as analytes.

The structure of silver-crosslinked chitosan thin film presented a monoclinic structure with high crystallinity of 131.71 nm at the prominent peak by XRD analysis. The FESEM and AFM analyses revealed the morphology to be rough in surface attributed to enhanced contact with analytes in SPR measurement compared to other thin films.

In the present study, the glutaraldehyde used to crosslink the thin film increased hydrophobicity and allows for more binding capacity.

The proposed silver-crosslinked chitosan thin film may prove beneficial for biosensing such as in environmental applications by SPR sensor.

The purpose of this paper is to analyse the operation of p-type side gate junctionless silicon transistor (SGJLT) in accumulation region through experimental measurements and 3-D TCAD simulation results. The variation of electric field components, carrier’s concentration and valence band edge energy towards the accumulation region is explored with the aim of finding the origin of SGJLT performance in the accumulation operational condition.

The device is fabricated by atomic force microscopy nanolithography on silicon-on-insulator wafer. The output and transfer characteristics of the device are obtained using 3-D Technology Computer Aided Design (TCAD) Sentaurus software and compared with experimental measurement results. The advantages of AFM nanolithography in contact mode and Silicon on Insulator (SOI) technology were implemented to fabricate a simple structure which exhibits the behaviour of field effect transistors. The device has 200-nm channel length, 100-nm gate gap and 4 μm for the distance between the source and drain contacts. The characteristics of the fabricated device were measured using an Agilent HP4156C semiconductor parameter analyzer (SPA). A 3-D TCAD Sentaurus tool is used as the simulation platform. The Boltzmann statistics is adopted because of the low doping concentration of the channel. Hydrodynamic model is taken to be as the main transport model for all simulations, and the quantum mechanical effects are ignored. A doping dependent Masetti mobility model was also included as well as an electric field dependent model with Shockley–Read–Hall (SRH) carrier recombination/generation.

We have obtained that the device is a normally on state device mainly because of the lack of work functional difference between the gate and the channel. Analysis of electric field components’ variation, carrier’s concentration and valence band edge energy reveals that increasing the negative gate voltage drives the device into accumulation region; however, it is unable to increase the drain current significantly. The positive slope of the hole quasi-Fermi level in the accumulation region presents mechanism of carriers’ movement from source to drain. The influence of electric field because of drain and gate voltage on charge distribution explains a low increasing of the drain current when the device operates in accumulation regime.

The proposed side gate junctionless transistors simplify the fabrication process, because of the lack of gate oxide and physical junctions, and implement the atomic force microscopy nanolithography for fabrication process. The optimized structure with lower gap between gate and channel and narrower channel would present the output characteristics near the ideal transistors for next generation of scaled-down devices in both accumulation and depletion region. The presented findings are verified through experimental measurements and simulation results.