Imec and Synopsys expand FinFET collaboration to 10 nm geometry

Citation

(2013), "Imec and Synopsys expand FinFET collaboration to 10 nm geometry", Microelectronics International, Vol. 30 No. 2. https://doi.org/10.1108/mi.2013.21830baa.005

Imec and Synopsys expand FinFET collaboration to 10 nm geometry

Article Type: Industry news From: Microelectronics International, Volume 30, Issue 2

Imec, the Belgian nanoelectronics research centre, and Synopsys, Inc. have expanded their collaboration in the field of technology computer aided design (TCAD) to next generation FinFET technology at 10 nm. The collaboration builds on extensive work done at 14 nm and several other process geometries, and will calibrate Synopsys’ Sentaurus™ TCAD models to support the next generation FinFET devices. The collaboration will include 3-D modelling of new device architectures and materials that will enable the semiconductor industry to continue to deliver products with higher performance and lower power consumption.

Imec is partnering with leading IC companies for research in advanced CMOS scaling. Device scaling beyond feature-size reduction requires research on a range of new technologies, including new materials, device architectures, 3-D integration, and photonics. The collaboration between Imec and Synopsys specifically focuses on the development and optimisation of new device architectures based on FinFETs and tunnel FETs (TFETs). At this week’s IEEE International Electron Devices Meeting (IEDM 2012, San Francisco, CA, USA, December 8-10, 2012), Imec presented a paper on the use of stressors to boost carrier mobility, which is critical to scale FinFET devices at 10 nm and beyond. Insights and understanding obtained through the usage of Synopsys’ TCAD tools will allow Imec to accelerate this research.

For more information please visit: www.imec.be; www.synopsys.com