Atotech’s semiconductor R&D team developed advanced electrochemical deposition copper chemistries capable of plating state-of-the-art Damascene structures with feature sizes down to 20 nm

Citation

(2012), "Atotech’s semiconductor R&D team developed advanced electrochemical deposition copper chemistries capable of plating state-of-the-art Damascene structures with feature sizes down to 20 nm", Microelectronics International, Vol. 29 No. 1. https://doi.org/10.1108/mi.2012.21829aaa.019

Atotech’s semiconductor R&D team developed advanced electrochemical deposition copper chemistries capable of plating state-of-the-art Damascene structures with feature sizes down to 20 nm

Article Type: New products From: Microelectronics International, Volume 29, Issue 1

Atotech’s semiconductor R&D team, located at the College of Nanoscale Science and Engineering (CNSE) in Albany, New York, has developed advanced electrochemical deposition (ECD) copper chemistries capable of plating state-of-the-art Damascene structures with feature sizes down to 20 nm. Such cutting edge structures are used in the latest memory technologies and are being developed for future devices down to the 15 nm technology node.