(2009), "Fairchild Semiconductor announces the lowest RDS(ON) 20 V MicroFET™ MOSFET in the industry", Microelectronics International, Vol. 26 No. 3. https://doi.org/10.1108/mi.2009.21826cad.006
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Copyright © 2009, Emerald Group Publishing Limited
Fairchild Semiconductor announces the lowest RDS(ON) 20 V MicroFET™ MOSFET in the industry
Article Type: New products From: Microelectronics International, Volume 26, Issue 3
Fairchild Semiconductor brings designers of portable applications a 20 V 2 mm×2 mm×0.55 mm thin MicroFET MOSFET that provides the lowest RDS(ON) in the industry. The FDMA6023PZT is a dual P-Channel MOSFET in a compact, low profile package that answers the portable design challenge requirements for thinner and smaller applications that are equipped with technology that conserves battery life. The FDMA6023PZT is packaged in an ultra-thin, lead-frame exposed MicroFET package with an excellent thermal resistance, delivering superb power dissipation and reducing conduction losses compared to conventional MOSFETs. This device is designed with Fairchild's advanced-performance PowerTrench® MOSFET process technology. This technology yields exceptionally low values for RDS(ON), total gate charge (QG) and Miller charge (QGD) – enhancements that result in superior conduction and switching performance.
The FDMA6023PZT is part of a comprehensive portfolio of MicroFET MOSFETs that are pivotal in addressing the power design challenges in today's feature-rich portable applications. This portfolio includes the FDMA1027PT, a 20 V P-Channel PowerTrench MOSFET, and the FDFMA2P853T, a 20 V P-Channel PowerTrench MOSFET with a Schottky diode. These products are 55 percent smaller and 50 percent lower in height than 3 mm×3 mm×1.1 mm MOSFETs typically used in low-voltage designs.